7TB4145 Search Results

Contextual Info: SAMSUNG SEM IC O N D U C T OR INC "üä 155 KS54AHCT KS74AHCT D E I 7Tb4145 DOQtDlt 1 | B 0 16 D - Dual 2-to-4 Line Decoders/Demultiplexers DESCRIPTION FEATURES • Typical applications: Dual 2-to-4 line decoder Dual 1-to-4 line demultiplexer 3-to-8 line decoder

C1000B

Abstract: 3020C
Contextual Info: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

16C256

Abstract: KM416C256DJ
Contextual Info: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: K M 4 4 C 1OOOD J CMOS DRAM ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

44v100

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 DD1SÛ22 4bt I KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tlUC te « ÍRC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10

Contextual Info: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual

Contextual Info: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V

ksr1012

Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47Kfi) • Complement to KSR1012 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

Contextual Info: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7Tb414e KM616513 DG17bE4 251 H S r i G K CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1 mA(max.)

C48D

Abstract: KM93C46 411E KM93C46I SC46
Contextual Info: SAMSUNG ELECTRONICS INC b? E D 71b414S ODlbälb OST SMGK CMOS EEPROM KM93C46 1K Bit Sería! Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating temperature range — KM93C46: Commercial — KM93C46I: Industrial • Single 5 Volt supply • High performance advanced CMOS technology

irf9540

Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Contextual Info: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times

10DC11

Contextual Info: IH S A MSUNG S E M I C ONDUCTOR IN C 05 DEB 7 ^ 4142 0 DD b 5 47 10-Bit Bus Interface Flip-Flops with 3-State Outputs Preliminary Specifications DESCRIPTION FEATURES • Functionally Equivalent to AMD’s Am29821 and Am29822 • Provides Extra Data Width Necessary for Wider Ad’ dressfData Paths or Buses with Parity

SFS9624

Contextual Info: SFS9624 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ I BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |iA Max. @ VDS = -250V

A30Z

Abstract: 3224B V256D ttl 74112
Contextual Info: KM416V256DJ CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS

Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual

Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: KM44C1003C/CL/CSL CMOS DRAM 1M x4B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM44C1003C/CIVCSL-5 50ns 13ns 90ns KM44Ú1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns KM44C1003C/CL/CSL-8

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung

KM44C1000C

Contextual Info: KM44C1OOOC/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000C/CUCSL is a high speed C M O S 1,0 4 8 ,5 7 6 x 4 D yn a m ic R and om A cce ss Memory. Its design is optimized for high performance