Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    7MBR100U4B120 Search Results

    SF Impression Pixel

    7MBR100U4B120 Price and Stock

    Fuji Electric Co Ltd 7MBR100U4B-120-50

    Igbt Module, 1.2Kv, 100A, 390W; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:2.85V; Power Dissipation:390W; Operating Temperature Max:150°C; Igbt Termination:Solder Pin; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |FUJI ELECTRIC 7MBR100U4B-120-50
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 7MBR100U4B-120-50 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    7MBR100U4B120 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7MBR100U4B120 Fuji Electric Power Integrated Module Original PDF

    7MBR100U4B120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7MBR100U4B120

    Abstract: 7mbr100u4b-120 ED-4701 MT5F12959 A1352
    Text: SPECIFICATION Device Name : Type Name : Spec. No. : Feb. 02 ’05 S.Miyashita Feb. 02 ’05 M.W atanabe Y.Seki K.Yamada Power Integrated Module 7MBR100U4B120 MS6M 0856 MS6M0856 1 15 H04-004-07b R e v i s e d Date Classification Feb.-02 -’05 Enactment Ind.


    Original     		7MBR100U4B120 MS6M0856 H04-004-07b H04-004-06b H04-004-03a 7MBR100U4B120 7mbr100u4b-120 ED-4701 MT5F12959 A1352 PDF

    7MBR100U4B120-50

    Abstract: MS5F6212
    Text: SPECIFICATION Device Name : Power Integrated Module RoHS compliant product Type Name Spec. No. : : 7MBR100U4B120-50 MS6M 0961 Feb. 02 ’06 K.Muramatsu T.Miyasaka Feb. 02 ’06 M.W atanabe K.Yamada MS6M0961 1 16 H04-004-07b R e v i s e d Date Classification


    Original     		7MBR100U4B120-50 MS6M0961 H04-004-07b H04-004-06b 7MBR100U4B120-50 H04-004-03a MS5F6212 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 PDF