79C0832 Search Results

YMB 06

Abstract: ADDR01
Contextual Info: 8 MEGABIT EEPROM MCM SPACE ELECTRONICS INC. 79C0832RP GND ADCBUS35 ADDRESS 73 ADDR07 5V GND ADDR06 ADDR05 ADDR04 ADDR03 ADDR02 ADDR01 ADDR00 5V GND GND GND GND GND GND 5V GND ADCBUS36 GND GND SPACE PRODUCTS GROUP CE1 ADCBUS34 1 ADCBUS38 ADCBUS33 ADCBUS39 ADCBUS32

79C0832

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

79C0832RP

Contextual Info: SPACE ELECTRONICS INC. 8 MEGABIT EEPROM MCM GND I/O15 ADDRESS CE1 73 ADDR07 GND ADDR06 5V ADDR05 ADDR04 ADDR03 79C0832RP ADDR02 ADDR01 ADDR00 GND GND 5V GND GND GND GND GND 5V GND GND I/O16 SPACE PRODUCTS I/O14 1 I/O18 I/O13 I/O19 I/O12 I/O20 I/O11 I/O21 I/O10

79C0832

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM Logic Diagram DESCRIPTION: • Eight 128k x 8-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si), depending upon space mission • Excellent Single event effects

79C0832

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

79C0832

Abstract: ACT244
Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects - SELTH > 120 MeV/mg/cm2

79C0832

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

79C0832

Contextual Info: Documentation Change Notice Current Consumption Test Conditions Manufacturer: Manufacturer Product Produ ct Effected: Document Number: Number Revision: Revision Date: Date Maxwell Technologies 79C0832 Rev 13 1004417 2 May 29, 2003 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States |

79C0832

Contextual Info: Documentation Change Notice Current Consumption Test Conditions Manufacturer: Manufacturer Product Effected: Document Number: Number Revision: Revision Date: Date Maxwell Technologies 79C0832 Data Sheet 1004417 1 May 7, 2003 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States |

79C0832

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM Logic Diagram DESCRIPTION: • Eight 128k x 8-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si), depending upon space mission • Excellent Single event effects

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

8X128

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects - SEL > 120 MeV cm2/mg (Device)

79C0832

Abstract: 129f1
Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM Logic Diagram DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space misssion. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM

79LV2040

Abstract: 79C0832
Contextual Info: 79LV2040 20 Megabit 512K x 40-Bit Low Low Voltage EEPROM MCM FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

79LV2040

Contextual Info: 79LV2040 20 Megabit 512K x 40-Bit Low Low Voltage EEPROM MCM FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

79LV2040

Contextual Info: 79LV2040 20 Megabit 512K x 40-Bit Low Low Voltage EEPROM MCM FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

28C011

Abstract: 28LV010 28C010 Maxwell Technologies 79C0832 79LV0408 79LV0832 HN58C1001 1mb eeprom
Contextual Info: APPLICATION NOTE Hitachi 1Mb EEPROM – Hitachi Die HN58C1001 Purpose Over the last several months several design applications questions have been asked regarding the Hitachi EEPROM. These questions have been to both clarify the datasheet specifications as well as obtain additional information not contained in the

ADC hard radiation

Abstract: 28/ADC hard radiation EEPROM 16MB SCS750 HSN-3000 79LV2040 29F0408 rad-pak 358 9240LP XP-40
Contextual Info: Microelectronics’ Product List Product Description Part Number Radiation Technology Package Screening Style Level FP DIP QFP Specification Status S or B Equivalent Data Sheet Active S, B, I, E S, B, I, E S, B, I, E S, B, I, E S, B, I, E Data Sheet Data Sheet

28C010RP

Abstract: 79C0832 79C0408RP 79C0832RP
Contextual Info: EEPROM Fam m ily www.spaceelectronics.com 3 volt and 5 volt versions available 128-Byte Page programming function to speed up erase and write operations Data polling and a Ready/Busy signal to indicate erase and programming operation status Integrated hardware, noise and

79C2040

Abstract: 79C0832
Contextual Info: 79C2040 20 Megabit 512K x 40-Bit EEPROM MCM FEATURES: DESCRIPTION: 512k x 40-bit EEPROM MCM Maxwell Technologies’ 79C2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

79C0832

Abstract: 79C2040 CE030
Contextual Info: 79C2040 20 Megabit 512K x 40-Bit EEPROM MCM FEATURES: DESCRIPTION: 512k x 40-bit EEPROM MCM Maxwell Technologies’ 79C2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging