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    78GHZ Search Results

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    78GHZ Price and Stock

    Molex 1461680001

    Antennas Micro Solutions/10 RHCP Ceramic GPS Ant
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    TTI 1461680001 Tray 3,600 50
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    Kyocera AVX Components BP0EA4600A700

    Signal Conditioning Size 4617 Fc4.6GHz PB 3.66 to 5.78GHz
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    TTI BP0EA4600A700 WAFL 24 24
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    Murata Manufacturing Co Ltd LQW18AN43NG8ZD

    RF Inductors - SMD 43 NH 2%
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    TTI LQW18AN43NG8ZD Reel 4,000
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    TE Connectivity 2195766-1

    Antennas GNSS L1L2 4mm
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    TTI 2195766-1 Bulk 1
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    TE Connectivity 2195767-1

    Antennas GNSS L1L2 10mm
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    TTI 2195767-1 Bulk 1
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    78GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cha3667aqdg

    Abstract: QFN-4x4 AN0017 7-18GHz SMD condensator
    Text: CHA3667aQDG RoHs COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial


    Original     		PDF CHA3667aQDG 7-20GHz CHA3667aQDG A3667A 7-20GHz 20dBm 24L-QFN4X4 DSCHA3667aQDG7296 QFN-4x4 AN0017 7-18GHz SMD condensator

    EC-ECJ006

    Abstract: EC-ECJ006-1105
    Text: EC-ECJ006-1105 高信頼性ゴム系電波吸収体（SAシリーズ） SAシリーズはマイクロ波帯／ミリ波帯域電波吸収体です。 シリコーン樹脂をマトリクスとしているため、耐熱性に優れ、しかもアウトガス量を極限まで低減させております。


    Original     		PDF EC-ECJ006-1105 10Gbps 40Gbps 10GHz 40GHz EC-ECJ006 EC-ECJ006-1105

    Untitled

    Abstract: No abstract text available
    Text: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication


    Original     		PDF CHA3667aQDG 7-20GHz CHA3667aQDG A3667A YYWW11 7-20GHz 20dBm 175mA 24L-QFN4X4 DSCHA3667aQDG0158

    CHA3667

    Abstract: No abstract text available
    Text: CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Vd Description The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a


    Original     		PDF CHA3667a 7-20GHz CHA3667a 7-20GHz DSCHA3667a0158 CHA3667

    CHA3667aQDG

    Abstract: AN0017 MO-220 7-18GHz 7-20GHz qfn 88 718G CHA3667 QFN 64 PACKAGE rth
    Text: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication


    Original     		PDF CHA3667aQDG 7-20GHz CHA3667aQDG A3667A 7-20GHz 20dBm 175mA 24L-QFN4X4 DSCHA3667aQDG0158 AN0017 MO-220 7-18GHz qfn 88 718G CHA3667 QFN 64 PACKAGE rth

    CHA3667

    Abstract: No abstract text available
    Text: CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Vd Description The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a


    Original     		PDF CHA3667a 7-20GHz CHA3667a 7-20GHz DSCHA3667a0158 CHA3667

    NF 838 G

    Abstract: No abstract text available
    Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2063a 7-13GHz CHA2063a 7-13GHz 8-13GHz 18dBm DSCHA20630096 -05-Apr-00 NF 838 G

    CHA3667aQDG

    Abstract: AN0017 CHA3667
    Text: CHA3667aQDG RoHs COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial


    Original     		PDF CHA3667aQDG 7-20GHz CHA3667aQDG A3667A 7-20GHz 20dBm DSCHA3667aQDG7296 AN0017 CHA3667

    inp hemt power amplifier

    Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
    Text: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface


    Original     		PDF CI0402 WR-10 CI0402 inp hemt power amplifier NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier N218

    Untitled

    Abstract: No abstract text available
    Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2063a 7-13GHz CHA2063a 7-13GHz 8-13GHz 18dBm DSCHA20630096 -05-Apr-00

    Untitled

    Abstract: No abstract text available
    Text: CHA2063 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2063 7-13GHz CHA2063 7-13GHz 8-13GHz 20dBm DSCHA20636354

    NF 838 G

    Abstract: CHA2063A
    Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		PDF CHA2063a 7-13GHz CHA2063a 7-13GHz 8-13GHz 18dBm DSCHA20630096 -05-Apr-00 NF 838 G

    8-12GHz

    Abstract: SS 1603 NF 838 G
    Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and


    Original     		PDF CHA2063a 7-13GHz CHA2063a 7-13GHz 8-13GHz 18dBm DSCHA20630096 -05-Apr-00 8-12GHz SS 1603 NF 838 G

    ferrite rod antenna

    Abstract: ferrite sheet Z1528 Mg-Zn Ferrites millimeter wave radar MgZn SOFT FERRITE POWDER jis z1528 loop antennas vhf FDK gps antenna DSRC absorber
    Text: EMI SUPPRESSION SHEETS, ABSORBERS & ANECHOIC BOXES EC-ECE001-0208 Products and applicable frequency ranges EMI control products/frequency ranges Frequency 1MHz 10MHz 100MHz CISPR noise reg. 1GHz Onboard 100GHz VCCI, FCC, EN Cellular phones VHF, TV Applications


    Original     		PDF EC-ECE001-0208 10MHz 100MHz 100GHz 10GHz 10Gbps 40Gbps 25GHz SA00SP htt67981 ferrite rod antenna ferrite sheet Z1528 Mg-Zn Ferrites millimeter wave radar MgZn SOFT FERRITE POWDER jis z1528 loop antennas vhf FDK gps antenna DSRC absorber

    DC1346

    Abstract: No abstract text available
    Text: PSM G E C P L E S S E Y DS3724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The Beam Leads are fabricated using a gold electroplating


    OCR Scan     		PDF DS3724-2 DC1346/46M/46S DC1346 30GHz 100GHz 100pm 150pm

    Untitled

    Abstract: No abstract text available
    Text: 37bflS22 GGlflMbD 375 « P L S B 5Ë GEC P L E S S E Y SEMICONDUCTORS DS3 724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The


    OCR Scan     		PDF 37bflS22 DC1346/46M/46S DC1346 30GHz 100GHz

    Untitled

    Abstract: No abstract text available
    Text: PBMGEC PLESSEY DS3344-1.3 DA1396/96-1 MILLIMETRE WAVE BALANCED MIXERS The DA1396 and DA1396-1 are Millimetre Wave Balanced Mixers. FEATURES • 74 to 82GHz Coverage Available ■ Low Conversion Loss ELECTRICAL CHARACTERISTICS @ 25°C ■ Small Size P a ra m e te r


    OCR Scan     		PDF DS3344-1 DA1396/96-1 DA1396 DA1396-1 82GHz DA1396 DA1396-1 78GHz 50MHz 10dBm