H5TQ2G63FFR-RDC
Abstract: H5TQ4G63MFRPBC H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G63DFR-PBC
Text: Page 1 DDR3 SDRAM Solder- Dow n VDD DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.5V 2Gb 256Mx8 DDR3 1866 H5TQ2G83EFR-RDC FBGA 78ball 8Bank, 1.5V, CL13,13-13-13 Now DDR3 1600 H5TQ2G83CFR-PBC FBGA(78ball) 8Bank, 1.5V, CL11,11-11-11 Now H5TQ2G83EFR-PBC
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256Mx8
H5TQ2G83EFR-RDC
78ball)
H5TQ2G83CFR-PBC
H5TQ2G83EFR-PBC
H5TQ2G83CFR-H9C
H5TQ2G83EFR-H9C
H5TQ2G63FFR-RDC
H5TQ4G63MFRPBC
H5TC8G83AMR-PBA
HMT351U7EFR8C-PB
H5TQ2G63DFR-PBC
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HYMP512S64CP8-Y5
Abstract: HYMP564S64CP6-Y5 H5TQ1G63BFR-H9C h5ps2g83afr-s6c H5PS1G63EFR-Y5C H5TQ1G83BFR-H9C HYMP564S64CP6-C4 HY5PS121621Cfp-y5 H5PS1G63EFR-S5C HY5PS12821CFP-Y5
Text: Q3’2009 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43AFP-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43BFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C
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256Mx4
H5TQ1G43AFP-H9C
78ball)
H5TQ1G43BFR-H9C
H5TQ1G43TFR-H9C
H5TQ1G43AFP-G7C
H5TQ1G43BFR-G7C
HYMP512S64CP8-Y5
HYMP564S64CP6-Y5
H5TQ1G63BFR-H9C
h5ps2g83afr-s6c
H5PS1G63EFR-Y5C
H5TQ1G83BFR-H9C
HYMP564S64CP6-C4
HY5PS121621Cfp-y5
H5PS1G63EFR-S5C
HY5PS12821CFP-Y5
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H5TQ2G63BFR-H9C
Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9
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256Mx4
H5TQ1G43BFR-H9C
78ball)
H5TQ1G43TFR-H9C
H5TQ1G43BFR-G7C
H5TQ1G43TFR-G7C
H5TQ1G83BFR-H9C
H5TQ2G63BFR-H9C
H5TQ1G83BFR-H9C
H26M42001EFR
H5RS1H23MFR
h27u1g8f2b
H27U1G8F2
H27UBG8T2A
H27UBG8T
H5MS2G22MFR-J3M
H26M54001BKR
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Untitled
Abstract: No abstract text available
Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:
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M2S1G64CBH4B5P
M2S2G64CB88B5N
M2S4G64CB8HB5N
PC3-8500
PC3-10600
PC3-12800
DDR3-1066/1333/1600
128Mx16
256Mx8
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NT1GC72B89A0NF
Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Text: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency
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NT1GC72B89A0NF
NT2GC72B8PA0NF
NT1GC72B89A1NF
NT2GC72B8PA1NF
PC3-8500
PC3-10600
DDR3-1066/1333
128Mx8
PC3-8500
nanya 2gb DDR3 DIMM
NT2GC72B8PA0NF-CG
ddr3 PCB footprint
NT2GC72B8PA0NF
Nanya DDR3
DDR3 DIMM footprint
DDR3 udimm jedec
PC3-10600
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IS46TR
Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16128A/AL,
IS43/46TR82560A/AL
256Mx8,
128Mx16
cycles/64
cycles/32
60A/AL
78-ball
IS46TR
IS43TR82560A
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
"2Gb DDR3 SDRAM"
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NT5CB64M16AP-CF
Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature Write Leveling 1.5V ± 0.075V JEDEC Standard Power Supply OCD Calibration 8 Internal memory banks (BA0- BA2) Dynamic ODT (Rtt_Nom & Rtt_WR) Differential clock input (CK, )
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NT5CB256M4AN
NT5CB128M8AN
NT5CB64M16AP
60-Ball
84-Ball
NT5CB64M16AP-CF
nt5cb64m16
NT5CB64M16AP-CG
NT5CB64M16AP
nanya NT5CB64M16AP
NT5CB64m
NT5CB64M16AP-BE
nt5cb64m16ap-dh
MPR 20 20 CF RESISTOR
NT5CB64M16AP-AC
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96-ball FBGA
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)
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EDJ1108EJBG
EDJ1116EJBG
EDJ1108EJBG)
EDJ1116EJBG)
78-ball
96-ball
1866Mbps/1600Mbps/1333Mbps
96-ball FBGA
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Untitled
Abstract: No abstract text available
Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features Signal Integrity JEDEC DDR3 Compliant - Configurable DS for system compatibility
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512M8CN
256M16CP
DDR3L-1866
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78 ball fbga
Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16128A/AL,
IS43/46TR82560A/AL
256Mx8,
128Mx16
cycles/64
cycles/32
Ref82560A/AL
78-ball
78 ball fbga
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
256Mx8
96-ball FBGA
96-BALL
96-ball FBGA ddr3
DDR3-1866L
78ball FBGA
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DDR3L SDRAM
Abstract: TN0008 MT41K1G8
Text: Preliminary‡ 8Gb: x4, x8 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Description Options Marking • Configuration – 128 Meg x 4 x 8 banks x 2 ranks
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MT41K2G4
MT41K1G8
MT41K1G4
MT41K2G4;
MT41K512M8
MT41K1G8.
78-ball
SAC305
09005aef84787542
DDR3L SDRAM
TN0008
MT41K1G8
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N2B3
Abstract: No abstract text available
Text: 2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb TwinDie DDR3 SDRAM uses Micron’s 1Gb
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MT41J512M4
MT41J256M8
78-ball
09005aef82fcca5a/Source:
09005aef82ed0bfa
MT41J512M4
N2B3
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Untitled
Abstract: No abstract text available
Text: 2Gb: x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features DDR3L-RS SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM
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MT41K256M8
MT41K128M16
8192-cycle
09005aef847d068f
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NT5CB256
Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800
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NT5CB512M8CN
NT5CB256M16CP
NT5CC512M8CN
NT5CC256M16CP
DDR3/L-1600-CL11
DDR3-1866-CL13
DDR3-2133-CL14
NT5CB256
NT5CC256M16CP-DI
NT5CB256M16
NT5CB256m
NT5CB512M8CN-DI
NT5CB256M16CP-DI
NT5CC512M8CN-DI
NT5CC512M8CN-DII
NT5CB256M16CP-EK
NT5CC512M8
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96-ball FBGA
Abstract: No abstract text available
Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • • • • • • Self refresh temperature SRT Automatic self refresh (ASR) Write leveling Multipurpose register
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MT41K256M8
MT41K128M16
09005aef847d068f
96-ball FBGA
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MT41K128M16
Abstract: No abstract text available
Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
09005aef83ed2952
MT41K128M16
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B209
Abstract: B-209
Text: Preliminary‡ 1Gb: x4, x8 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks • Selectable BC4 or BL8 on-the-fly OTF • Self refresh mode • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C
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MT41K256M4
MT41K128M8
8192-cycle
09005aef833b7221
B209
B-209
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MT41K128M16
Abstract: MT41K128M1 TIS87 AC135 MT41K256 MT41K128M 140-RT-T MT41K
Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C; See SRT
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MT41K256M8
MT41K128M16
8192-cycle
09005aef847d068f
MT41K128M16
MT41K128M1
TIS87
AC135
MT41K256
MT41K128M
140-RT-T
MT41K
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MT41K256M8DA
Abstract: MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K
Text: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •
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MT41J512M4
MT41J256M8
MT41J128M16
09005aef84bd8f53
MT41K256M8DA
MT41K256M8DA-125
MT41K
MT41K256M8
mt41k256m8da-125-k
96-Ball
MT41K256M8DA125K
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MT41K1G8
Abstract: MT41K2G4 A711 micron marking code information
Text: Preliminary‡ 8Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 2 ranks – 64 Meg x 8 x 8 banks x 2 ranks
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MT41K2G4
MT41K1G8
SAC305
09005aef84787542
MT41K1G8
MT41K2G4
A711
micron marking code information
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K4B4G0846C
Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446C
K4B4G0846C
78FBGA
K4B4G0846C
K4B4G0846C-BCMA
K4B4G0446C-BCK0
DDR3-1866
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MICRON ddr3
Abstract: A-225 DDR3 1gb dimm
Text: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking
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MT41J512M4
MT41J256M8
MT41J128M16
09005aef826aaadc
MICRON ddr3
A-225
DDR3 1gb dimm
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K4B4G0846B-HYK0
Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Text: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446B
K4B4G0846B
78FBGA
K4B4G0846B-HYK0
K4B4G0846B-HYH9
K4B4G0446B-HYK0
K4B4G0446B-HYH9
09 06 115 2932
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K4B4G0846a
Abstract: No abstract text available
Text: Rev. 1.11, Jan. 2011 K4B4G0446A K4B4G0846A 4Gb A-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446A
K4B4G0846A
78FBGA
K4B4G0846a
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