smd diode 708
Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed
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BAT93
SCD24
smd diode 708
SMD M1B diode
M1B Diode smd
CD 4938
Silicon Schottky Diode sod123
SMD M1B
str 541
BAT93
SCD24
ir 7811
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4245
Abstract: SMD M1B BAT56 SMD M1B diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current
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BAT56
SCD24
4245
SMD M1B
BAT56
SMD M1B diode
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Untitled
Abstract: No abstract text available
Text: RGA 37A . RGA 37M 49 Reverse Voltage: 50 to 1000 V Features !"#$ % % & & &' * & % & ) + ) ) % & Mechanical Data , -.*/ ,
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MSD060
Abstract: BUK7213-40A
Text: BUK7213-40A TrenchMOS standard level FET Rev. 01 — 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS™ technology.
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BUK7213-40A
M3D300
OT428
MSD060
BUK7213-40A
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Untitled
Abstract: No abstract text available
Text: SEMiX 854GB176HDs Absolute Maximum Ratings Symbol Conditions IGBT - -23 4 6 SEMiX 4s Trench IGBT Modules SEMiX 854GB176HDs Target Data Features
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854GB176HDs
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Untitled
Abstract: No abstract text available
Text: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6210-55C
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854GB176HD
Abstract: No abstract text available
Text: SEMiX 854GB176HD Absolute Maximum Ratings Symbol Conditions IGBT - -23 4 6 SEMiX 4 Trench IGBT Modules SEMiX 854GB176HD Target Data Features !
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854GB176HD
854GB176HD
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Untitled
Abstract: No abstract text available
Text: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT . / 78 ./( ; $ % SKiM 5 SKiM 601GD126DM Preliminary Data Features & ?= & Values Units 0*11 451 $631% 911 : *1 < 41 = > 0+1 $0*+%
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601GD126DM
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EI- 33C
Abstract: No abstract text available
Text: SEMiX 253GD176HDc Absolute Maximum Ratings Symbol Conditions IGBT - -01 4 6 SEMiX 33c Trench IGBT Modules SEMiX 253GD176HDc Target Data Features
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253GD176HDc
EI- 33C
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Untitled
Abstract: No abstract text available
Text: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT - -01 4 6 SEMiX 3 Trench IGBT Modules SEMiX 253GB176HD Preliminary Data Features
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253GB176HD
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1010 817 D21 B
Abstract: SDH 209 OQ2535HP OQ2536HP D1432
Text: INTEGRATED CIRCUITS DATA SHEET OQ2535HP SDH/SONET STM16/OC48 multiplexer Preliminary specification File under Integrated Circuits, IC19 1997 Nov 27 Philips Semiconductors Preliminary specification SDH/SONET STM16/OC48 multiplexer OQ2535HP FEATURES GENERAL DESCRIPTION
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OQ2535HP
STM16/OC48
STM16/OC48
OQ2535HP
32-channel
SCA56
427027/100/01/pp20
1010 817 D21 B
SDH 209
OQ2536HP
D1432
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601GD126DM
Abstract: SKIM
Text: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT . / 78 ./( ; $ % SKiM 5 SKiM 601GD126DM Preliminary Data Features & ?= & Values Units 0*11 451 $631% 911 : *1 < 41 = > 0+1 $0*+%
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601GD126DM
601GD126DM
SKIM
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Untitled
Abstract: No abstract text available
Text: LF PA K PSMN5R9-30YL N-channel 6.1 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 01 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN5R9-30YL
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450GD126D
Abstract: SKiM450GD126D
Text: SKiM 450GD126D Absolute Maximum Ratings Symbol Conditions IGBT 0 1* 78 01* ; & ' SKiM 5 SKiM 450GD126D Preliminary Data Features ! "#$ % &%
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450GD126D
450GD126D
SKiM450GD126D
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Untitled
Abstract: No abstract text available
Text: SEMiX 253GD176HDc Absolute Maximum Ratings Symbol Conditions IGBT - -01 4 6 SEMiXTM 33c Trench IGBT Modules SEMiX 253GD176HDc Target Data Features
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253GD176HDc
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Untitled
Abstract: No abstract text available
Text: SEMiX 353GB126HD Absolute Maximum Ratings Symbol Conditions IGBT , ,01 4 6 SEMiXTM 3 Trench IGBT Modules SEMiX 353GB126HD Target Data Features !
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353GB126HD
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Abstract: No abstract text available
Text: SEMiX 353GB126HD Absolute Maximum Ratings Symbol Conditions IGBT , ,01 4 6 SEMiXTM 3 Trench IGBT Modules SEMiX 353GB126HD Target Data Features !
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353GB126HD
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Untitled
Abstract: No abstract text available
Text: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT - -01 4 6 SEMiXTM 3 Trench IGBT Modules SEMiX 253GB176HD Target Data Features !
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253GB176HD
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Untitled
Abstract: No abstract text available
Text: SEMiX 353GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT , ,01 4 6 SEMiXTM 3s Trench IGBT Modules SEMiX 353GB126HDs Target Data Features
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353GB126HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 353GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT , ,01 4 6 SEMiXTM 3s Trench IGBT Modules SEMiX 353GB126HDs Target Data Features
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353GB126HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT - -01 4 6 SEMiXTM 3 Trench IGBT Modules SEMiX 253GB176HD Target Data Features !
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253GB176HD
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OF IGBT
Abstract: DIODE JS
Text: SKiM 450GD126D Absolute Maximum Ratings Symbol Conditions IGBT 0 1* 78 01* ; & ' SKiM 5 SKiM 450GD126D Preliminary Data Features ! "#$ % &%
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450GD126D
OF IGBT
DIODE JS
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Untitled
Abstract: No abstract text available
Text: SEMiX 302GB126HD Absolute Maximum Ratings Symbol Conditions IGBT , ,01 4 6 SEMiXTM 2 Trench IGBT Modules SEMiX 302GB126HD Target Data Features !
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302GB126HD
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Untitled
Abstract: No abstract text available
Text: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07
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G00G173
500mW
DO-35
DO-41
DO-15
DO-201AD
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