78-01 DIODE DATA Search Results

Contextual Info: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07

smd diode 708

Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed

4245

Abstract: SMD M1B BAT56 SMD M1B diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current

Contextual Info: RGA 37A . RGA 37M 49 Reverse Voltage: 50 to 1000 V Features                      !"#$  %  %  & &  &'     * &   %  &  )  +  )  ) % & Mechanical Data          , -.*/ ,

MSD060

Abstract: BUK7213-40A
Contextual Info: BUK7213-40A TrenchMOS standard level FET Rev. 01 — 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS™ technology.

Contextual Info: SEMiX 854GB176HDs Absolute Maximum Ratings Symbol Conditions IGBT  - -23 4 6     SEMiX 4s Trench IGBT Modules SEMiX 854GB176HDs Target Data Features                         

Contextual Info: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

854GB176HD

Contextual Info: SEMiX 854GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -23 4 6     SEMiX 4 Trench IGBT Modules SEMiX 854GB176HD Target Data Features                               !

Contextual Info: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT ./  78 ./( ; $ %   SKiM 5 SKiM 601GD126DM Preliminary Data Features           & ?=    &  Values Units 0*11 451 $631% 911 : *1 < 41 = > 0+1 $0*+%

EI- 33C

Contextual Info: SEMiX 253GD176HDc Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiX 33c Trench IGBT Modules SEMiX 253GD176HDc Target Data Features                         

Contextual Info: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiX 3 Trench IGBT Modules SEMiX 253GB176HD Preliminary Data Features                         

1010 817 D21 B

Abstract: SDH 209 OQ2535HP OQ2536HP D1432
Contextual Info: INTEGRATED CIRCUITS DATA SHEET OQ2535HP SDH/SONET STM16/OC48 multiplexer Preliminary specification File under Integrated Circuits, IC19 1997 Nov 27 Philips Semiconductors Preliminary specification SDH/SONET STM16/OC48 multiplexer OQ2535HP FEATURES GENERAL DESCRIPTION

601GD126DM

Abstract: SKIM
Contextual Info: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT ./  78 ./( ; $ %   SKiM 5 SKiM 601GD126DM Preliminary Data Features           & ?=    &  Values Units 0*11 451 $631% 911 : *1 < 41 = > 0+1 $0*+%

Contextual Info: LF PA K PSMN5R9-30YL N-channel 6.1 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 01 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

302GB

Contextual Info: SEMiX 302GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiX 2 Trench IGBT Modules SEMiX 302GB126HD Target Data Features                               !

Contextual Info: SEMiX 253GD176HDc Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiXTM 33c Trench IGBT Modules SEMiX 253GD176HDc Target Data Features                         

Contextual Info: SEMiX 353GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 353GB126HD Target Data Features                               !

Contextual Info: SEMiX 353GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 353GB126HD Target Data Features                               !

Contextual Info: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 253GB176HD Target Data Features                               !

Contextual Info: SEMiX 353GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3s Trench IGBT Modules SEMiX 353GB126HDs Target Data Features                         

Contextual Info: SEMiX 353GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3s Trench IGBT Modules SEMiX 353GB126HDs Target Data Features                         

Contextual Info: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 253GB176HD Target Data Features                               !

OF IGBT

Abstract: DIODE JS
Contextual Info: SKiM 450GD126D Absolute Maximum Ratings Symbol Conditions IGBT 01*  78 01* ; & '   SKiM 5 SKiM 450GD126D Preliminary Data Features                            ! "#$ % &%

Contextual Info: SEMiX 302GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 2 Trench IGBT Modules SEMiX 302GB126HD Target Data Features                               !