77MHZ Search Results

PM8318

Abstract: G747 PM5309
Contextual Info: PM8318 TEMAP 168 W P 622M Interface Aux 6x EC1 C&D ay sd ur Th on rt pe ex n ico sil 04 9: :0 06 05 20 PMON/Alarms ar X C Do wn lo 77MHz Telecom Bus S T S 1 by s P 622M Interface Main OC-12 HO POH LO POH term ad ed W as eli m BLOCK DIAGRAM of • Processes 168 T1s/126 E1s or half of

BB844

Abstract: BCW66 Infineon Technologies Silicon Tuning Diode
Contextual Info: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply

77MHZ

Abstract: BB844
Contextual Info: BB844 3 Silicon Variable Capacitance Diode Preliminary data
For FM radio tuner with extended frequency band 77MHz to 108MHz 2
Designed for application requiring back-to-back diode configuration for optimum signal distortion 1 and detuning VPS05161
High tuning ratio low supply voltage car radio

BB844

Contextual Info: BB844 Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band 77MHz to 108MHz
Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning
High tuning ratio at low supply voltage car radio

BB844

Contextual Info: BB844 Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band 77MHz to 108MHz
Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning
High tuning ratio at low supply voltage car radio

BB844

Abstract: BCW66
Contextual Info: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply

marking SOT23 V 4 diode

Contextual Info: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply

TB0820A

Abstract: 77-MHz 280/DCC 280
Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com IF SAW Filter 138.24MHz BW=77MHz MODEL NO.: TB0820A

Contextual Info: BB844 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band 77MHz to 108MHz • Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning • High tuning ratio at low supply

108MHz

Abstract: BB844
Contextual Info: BB844 Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band 77MHz to 108MHz
Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning
High tuning ratio at low supply voltage car radio

c2 sot23

Abstract: 108MHz BB844 parameter values
Contextual Info: BB844 3 Silicon Variable Capacitance Diode Preliminary data
For FM radio tuner with extended frequency band 77MHz to 108MHz 2
Designed for application requiring back-to-back diode configuration for optimum signal distortion 1 and detuning VPS05161
High tuning ratio low supply voltage car radio

Contextual Info: IBM IBM0316809C Advance 2M x 8 Synchronous DRAM Features Programmable Burst Lengths: 1,2,4,8,full-page • High Performance: CA S latency = 3 -10 C lock Frequency -11 -12 -13 <100M Hz <91 MHz <83MHz <77MHz C lock Cycle 10ns 11ns 12ns 13ns A ccess Tim e from the Clock

Contextual Info: PM8318 TEMAP 168 W 622M Interface Aux S T S 1 OC-12 HO POH LO POH term Do wn lo ad ed P 622M Interface Main by C P on te n BLOCK DIAGRAM W 77MHz Telecom Bus 6x EC1 C&D X C EC1 Line Section Term Pa rtm in er In co n Fr id ay ,0 1J ul y, 20 05 09 :0 4: 33 • Each T1 transceiver can be

Contextual Info: IBM0316409C Advance 4M x 4 Synchronous DRAM Features Programmable Burst Lengths: 1,2,4,8,full-page • High Performance: CAS latency = 3 -10 C lock Frequency -11 -12 -13 Burst Read/Write Modes with Sequential and Interleave Addresses <100M Hz <91 MHz <83MHz <77MHz

Contextual Info: 2.5V, 2GHz ANY DIFF. IN-TO-LVDS Precision Edge SY89872U PROGRAMMABLE CLOCK DIVIDER/FANOUT Final BUFFER WITH INTERNAL TERMINATION FEATURES DESCRIPTION • Guaranteed AC performance over temperature and voltage: • >2GHz FMAX • < 750ps Tpd matched delay between banks

VCXO 27MHZ

Abstract: PLL500-27 PLL500-27B PLL500-37 PLL500-37BDC PLL500-47 PLL500-47BDC waffle P5003 sc 620 8pin
Contextual Info: PLL500-27B/-37B/-47B Low Power CMOS Output VCXO Family 27MHz to 200MHz FEATURES • • • • • • • XIN 1 OE^ 2 VIN 3 GND 4 8 XOUT 7 DS^ 6 VDD* 5 CLK ^: Denotes internal Pull-up DIE PAD LAYOUT 8 1 Die ID: 2 PLL500-27B: C500A0505-05P 3 PLL500-37BDC:

SY89871U

Abstract: SY89872U SY89873L SY89873LMG SY89873LMI SY89873LMITR
Contextual Info: Precision Edge 3.3V, 2.0GHz ANY DIFF. IN-TO-LVDS SY89873L ® Precision Edge PROGRAMMABLE CLOCK DIVIDER SY89873L FANOUT BUFFER W/ INTERNAL TERMINATION Micrel, Inc. FEATURES • Guaranteed AC performance • > 2.0GHz fMAX output toggle • > 3.0GHz fMAX input

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS6014T1R2NMGGV Features Item Summary 1.2 H(±30%), 4000mA, 2750mA Lifecycle Stage

74hc74a

Abstract: IC 74LS74
Contextual Info: - TC74HC74AP/AF/AFN DUA L D - T Y P E FLIP FLOP PRESET AND CLEAR T h e TC 74H C 74A is a h ig h sp e e d C M O S D F L I P F L O P fa b ric a te d w ith silic o n g a te C2M OS te c h n o lo g y . It a ch iev e s th e h ig h sp eed o p e ra tio n s i m i l a r to

1189B

Abstract: OPA641 OPA641H OPA641HSQ OPA641P OPA641U centrifuge 1x08
Contextual Info: OPA641 Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● GAIN-BANDWIDTH: 1.6GHz ● STABLE IN GAINS ≥ 2 ● COMMUNICATIONS ● MEDICAL IMAGING ● TEST EQUIPMENT ● CCD IMAGING ● LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.015%/0.006°

Contextual Info: 6000 Family Architectural Description available as dedicated device outputs. These signals are also available as inputs to the GRP to facilitate use by onchip logic. ispLSI 6000 Family Introduction The ispLSI 6192 is a high-density, Cell-Based programmable logic device containing a dedicated Memory

LM120 model SPICE

Abstract: crystal Oscillator AGC MOTOROLA ECL DS26C32 SO space qualified synthesizer mil national semiconductor cmos databook LP2953* spice 0.35 micron amps MODEL PARAMETERS SPICE CLC409 CLC520
Contextual Info: VOLUME NO. 12 1997 Wireless Secure Communications M ilitary tactical and satellite networks and radios are tasked with handling ever greater amounts of data and voice traffic – often over existing channels. As advanced modulation techniques, coding, compression, and encryption techniques are developed,

OPA628AP

Abstract: OPA620 OPA628 OPA628AU
Contextual Info: OPA628 OPA 628 OPA 628 Low Distortion Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● EXCELLENT DIFFERENTIAL GAIN: 0.015% EXCELLENT DIFFERENTIAL PHASE: 0.015° LOW DISTORTION: 90dB SFDR TWO-TONE THIRD-ORDER INTERCEPT:

RA07M0608M-101

Abstract: RA07M0608M Pin-30mW RA07M0608
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to