7777777Z Search Results

Contextual Info: Advanced CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P a g e Load Tim er ■ Low Power CMOS Dissipation:

Contextual Info: ICRTRLYST I S E M I C O N D U C T O R CAT28C65A/CAT28C65AI 64K-Bit CMOS E2PROM FEATURES • Fast Read A ccess T im es: 150/200/250ns ■ A u to m atic Pag e W rite O peratio n -1 to 32 B ytes in 10m s - P a g e Load T im e r ■ Low P o w er C M O S Dissipation:

V61C16

Contextual Info: gr VITELIC V61C16 FAMILY HIGH PERFORMANCE LOW POWER 2K x 8 BIT CMOS STATIC RAM f Description Features m • ■ ■ ■ ■ ■ ■ The V61C16 is a high speed, low power, 2048-word by 8-bit CMOS static RAM fabricated using high-performance CMOS process technology.

sn 74374

Abstract: SAB82731 sab8273 82731 dot BB505G 16XT1 82730
Contextual Info: S IE M E N S SAB 82731 Dot Rate Generator A complete video interface between CRT controller and CRT display SAB 82731 50 M Hz SAB 82731-2 80 MHz SAB 82731-3 65 MHz • Dot sh ift rates up to 80 MHz SAB82731-2 • Character a ttrib u te processing • Character length up to 16 dots

Contextual Info: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. [AK9824] AS AH I KASEI

Contextual Info: M O S E L V IT E L IC VS3C8125H ULTRA-HIGH PERFORMANCE, 128K X 8 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, lRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 18 ns 20 ns 22 ns 24 ns

Contextual Info: M OSEL VITELIC V54C316802VA HIGH PERFORMANCE 3.3 VOLT2M X 8 SYNCHRONOUS DRAM 2 BANKS X 1MBit X 8 CAS Latency = 3 PRELIMINARY 8 10 12 System Frequency fCK 125 MHz 100 MHz 83 MHz Clock Cycle Tim e (tcK 3 ) 8 ns 10 ns 12 ns Clock Access Tim e (tAC3) 7 ns 8 ns

Contextual Info: STK22C48 SllflTEH CMOS nvSRAM 2K x 8 High Performance AutoStore Nonvolatile Static RAM FEATURES DESCRIPTION 30,35 and 45ns Access Times 15 mA lcc at 200ns Access Speed Automatic STORE to EEPROM on Power Down Hardware Initiated STORE io EEPROM Automatic sro/7£Timlng

Contextual Info: I‘f VITEUC V53C128A FAMILY HIGH PERFORMANCE, LOW POWER 128K X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C128A 70/70L 80/80L 10/10L 70 ns 60 ns 100 ns Max. RAS Access Time, tRAC Max. Column Address Access Time, (tCAA) 35 ns 40 ns 45 ns Min. Fast Page Mode Cycle Time, (tp c)

Contextual Info: CAT28C64A/CAT28C64AI 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 150/200/250ns ■ CMOS and TTL Compatible I/O ■ Low Power CMOS Dissipation: -Active: 30mA Max. -Standby: 100|xA Max. ■ Automatic Page Write Operation: -1 to 32 Bytes in 10ms

53C256

Abstract: 53C104 V53C104
Contextual Info: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory

Contextual Info: MOSEL- VITELIC V53C8256N HIGH PERFORMANCE, 3.3 VOLT 256K X 8 B IT FAST PA GE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C8256N ADVANCED INFORMA TION 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA)

CAT28C16A

Contextual Info: IIIIIC F IT R L Y S T • ■ III S E M I C O N D U C T O R C A T 2 8 C 1 6 A /C A T 2 8 C 1 6 A l 16K-Bit CMOS E2PROM FEATURES ■ Fast Read Access Times: 200 ns Fast Nonvolatile Write Cycle: 10ms Max ■ Low Power CMOS Dissipation: -A ctive: 25mA Max. -Standby: 100|iA Max.

CAT28LV64

Contextual Info: IIIIICRTRLY5T •■1 1 / Preliminary S E M I C O N D U C T O R CAT28LV64 64K-Bit CMOS E2PROM FEATURES ■ 3.0V to 3.6 V Supply Commercial and Industrial Temperature Ranges ■ Read Access Times: - 250/300/350ns CMOS and TTL Compatible I/O Automatic Page Write Operation:

CAT28C64B

Contextual Info: CRTRLYST S E M I C O N D U C T O R CAT28C64B/CAT28C64BI 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: -1 2 0 /1 50/200ns Commercial -150/200ns (Industrial) ■ Automatic Page Write Operation: -1 to 32 Bytes in 5ms -P a g e Load Timer ■ Low Power CMOS Dissipation:

ZN432E

Abstract: Ferranti Semiconductors ferranti T-77-M
Contextual Info: FERRANTI £ semiconductors A to D C O N V ER TER ZN432E 1 0 - B i t Successive A op ro x im atio n M o n o lith ic A / D Converter FEATURES • 1 0 Bit R esolution • N o M issing C odes • 2 0 /is C onversion T im e G uaranteed • In p u t R ange as Desired

Contextual Info: • A3623&3 Q0DS37L, TS1 « S O N Y SONY C X K 1 2 0 6 A M /A T M Video Signal Field Memory D escription The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith both NTSC and PAL and o f storing pictures fo r one 8-bit field w ith tw o

Contextual Info: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2 ,1 5 ,1 7 ,2 0 ns(M ax.) • Low Pow er Dissipation The K M 61 6 V 1 00 2 A is a 1,048,576-bit high-speed Static

Contextual Info: Advanced CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-BÍÍ CMOS PARALLEL E2PR0M FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P age Load Timer ■ Low Power CMOS Dissipation:

td5090

Abstract: L0614 1N914 DD01
Contextual Info: bflE D CATALYST l'ìbSb'ìS 0001037 TÖD « C S T SEMICONDUCTOR S E M I C O N D U C T O R CAT28C16V3 16K-Bit CMOS POWER MISER E2PROM FEATURES • Fast Read Access Times: 700 ns Fast Nonvolatile Write Cycle: 20ms Max ■ Low Power CMOS Dissipation: -Active: 10mA Max.

512X4

Abstract: AC07 H133 HY534256A ci 28448
Contextual Info: PRELIMINARY M 1 C 1 2 0 0 A -JA N 9 2 DESCRIPTION FEATURES The HY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI CMOS process, the HY534256A offers a fast page mode for high bandwide operation, fast

Contextual Info: PRELIMINARY CMOS SRAM KM64V1003A 2 5 6 K x 4 Bit With UE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e 12,15,17,20 ns(Max.) • Low Power D issipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12 :1 6 0 mA(Max.)

CAT28LV256

Contextual Info: I f f llC Preliminary • I f f ¡ S R E M T I C R O L N D Y U C S T O T R CAT28LV256 256K-Bit CMOS E2PROM FEATURES ■ 3.0V to 3.6V Supply CMOS and TTL Compatible I/O ■ Read Access Times: 250/300/350 ns Automatic Page Write Operation: - 1 to 64 Bytes in 10ms

Contextual Info: M OSEL V IT E U C V53C16256HN 256K X16 CMOS DYNAMIC RAM WITH OPTIONAL SELF REFRESH HIGH PERFORMANCE ADVANCED INFORMATION 45 50 Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Tim e, O caa) 22 ns 25 ns 28 ns 30 ns Min. Fast Page Mode Cycle Tim e, (tPC)