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Infineon Technologies AG BSM75GD120DN2BOSA1 IGBT MOD 1200V 103A 520W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSM75GD120DN2BOSA1	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	BSM75GD120DN2BOSA1	Tray			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	BSM75GD120DN2BOSA1		29		1	1 $301.94 10 $301.94 100 $283.82 1000 $256.65 10000 $256.65	Buy Now
EBV Elektronik	BSM75GD120DN2BOSA1			143 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BSM75GD120DLCBOSA1 IGBT MOD 1200V 125A 500W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSM75GD120DLCBOSA1	Tray			10	1 - 10 $370.775 100 $370.775 1000 $370.775 10000 $370.775	Buy Now
Avnet Americas	BSM75GD120DLCBOSA1	Tray			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	BSM75GD120DLCBOSA1		5		1	1 $398.37 10 $398.37 100 $374.47 1000 $338.61 10000 $338.61	Buy Now
EBV Elektronik	BSM75GD120DLCBOSA1			143 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Buy Now
SEMIKRON SK75GD12T4TP Sk75Gd12T4Tp \|Semikron SK75GD12T4TP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SK75GD12T4TP	Bulk			6	1 - 10 $105.83 100 $96.76 1000 $96.76 10000 $96.76	Buy Now
SEMIKRON SK 75 GD 12T4 T Igbt Module, Six, 1.2Kv, 102A; Continuous Collector Current:102A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SK 75 GD 12T4 T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SK 75 GD 12T4 T	Bulk			6	1 - 10 $139.34 100 $127.39 1000 $127.39 10000 $127.39	Buy Now
SEMIKRON SK 75 GD 12T4 T 24914790 Module: IGBT; transistor/transistor; IGBT three-phase bridge
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SK 75 GD 12T4 T 24914790				1	1 $464.73 10 $369.33 100 $369.33 1000 $369.33 10000 $369.33	Get Quote

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75GD12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
f422 Abstract: No abstract text available Text: SKM 75GD123D L3 Q RS TI9 * /2; .+824=';2 ; 23'F'25 Absolute Maximum Ratings Symbol Conditions IGBT >IU& LV Q RS TI DI LV Q NSX TI DI[$ NRXX > YS P L30;2 Q ZX TI SX P NXX P ] RX > LV Q NRS TI NX a; L30;2 Q RS TI YS P L30;2 Q ZX TI SX P NXX P SSX P NXX P E cX bbbd NSX	Original	75GD123D 75GD123DL 75GDL123D f422	PDF
Untitled Abstract: No abstract text available Text: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT 6 % %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features	Original	75GD123D 75GD123DL 75GDL123D	PDF
Untitled Abstract: No abstract text available Text: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT 6 % %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features	Original	75GD123D 75GD123DL 75GDL123D	PDF
SKM75GD123D Abstract: No abstract text available Text: SKM 75GD123D - 2 34 5* ' Absolute Maximum Ratings Symbol Conditions IGBT 6 -7 2 34 5 %* -7 2 /49 5* %< /399 :4 1 - 2 ;9 5 49 1 /99 1 > 39 -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49	Original	75GD123D 75GD123DL 75GDL123D SKM75GD123D	PDF
Untitled Abstract: No abstract text available Text: SKM 75GD123D - 2 34 5* ' Absolute Maximum Ratings Symbol Conditions IGBT 6 -7 2 34 5 %* -7 2 /49 5* %< /399 :4 1 - 2 ;9 5 49 1 /99 1 > 39 -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49	Original	75GD123D 75GD123DL 75GDL123D	PDF
Untitled Abstract: No abstract text available Text: SKM 75GD123D - 2 34 5* ' Absolute Maximum Ratings Symbol Conditions IGBT 6 -7 2 34 5 %* -7 2 /49 5* %< /399 :4 1 - 2 ;9 5 49 1 /99 1 > 39 -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49	Original	75GD123D 75GD123DL 75GDL123D	PDF
Untitled Abstract: No abstract text available Text: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT 6 % %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features	Original	75GD123D 75GD123DL 75GD123D 75GDL123D GC66G	PDF
Untitled Abstract: No abstract text available Text: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT 6 % %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features	Original	75GD123D 75GD123DL 75GDL123D	PDF
SKM75GD123D Abstract: No abstract text available Text: SKM 75GD123D - 2 34 5* ' Absolute Maximum Ratings Symbol Conditions IGBT 6 -7 2 34 5 %* -7 2 /49 5* %< /399 :4 1 - 2 ;9 5 49 1 /99 1 > 39 -7 2 /34 5* /9 B - 2 34 5* :4 1 - 2 ;9 5* 49 1 /99 1 449 1 /99 1 & D9 CCCE /49	Original	75GD123D 75GD123DL 75GDL123D SKM75GD123D	PDF
75GD120DN2 Abstract: SIGC121T120R2C Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V	Original	SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041sawn A4682-A003 7171-M, 75GD120DN2	PDF
SKM 75 Gb 124 IGBT Abstract: 75GD12 XLS-10 ICT80 Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 100 / 75	Original		PDF
Untitled Abstract: No abstract text available Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 90 / 75	Original		PDF
Semitrans M SKD 100 GAL Abstract: SKM 75 GAL 123 IGBT skd 75 ic 747 Semitrans M SKD igbt sixpack semikron skd 100 SKM75GD123D b6u 500 semikron semikron SKD 75 gal Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040	Original		PDF
Untitled Abstract: No abstract text available Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V	Original	SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M,	PDF

75GD120DN2 Abstract: SIGC121T120R2C Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V	Original	SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M, 75GD120DN2	PDF
skm 200 gb 122 d Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131 Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,	Original		PDF
SKM 75 GAL 123 IGBT Abstract: semikron SKD 75 gal Semitrans M SKD 100 GAL B6U 380 Semitrans M SKD brake chopper b6u 500 semikron semikron skd 75 semikron skd skd75 Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040	Original	75GD123D SKM 75 GAL 123 IGBT semikron SKD 75 gal Semitrans M SKD 100 GAL B6U 380 Semitrans M SKD brake chopper b6u 500 semikron semikron skd 75 semikron skd skd75	PDF
75GD124D Abstract: No abstract text available Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 90 / 75	Original		PDF
IEC 974-1 Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,	Original		PDF
FZ1600R12KF4 Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC	Original	600V/1700V 500V/3300V 50GB60DLC 75GB60DLC 100GB60DLC 150GB60DLC 200GB60DLC 300GB60DLC FZ1600R12KF4 IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb	PDF
75GD120DN2 Abstract: BSM75GD120DN2 Text: SIGC121T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling  integrated gate resistor Chip Type VCE SIGC121T120R2C 1200V This chip is used for:	Original	SIGC121T120R2C 75GD120DN2 SIGC121T120R2C L7171MM, BSM75GD120DN2	PDF
D75GA Abstract: semibox SKM 75 GAL 123 IGBT Semitrans M SKD 100 GAL semikron SKD 75 gal SKD75GAL Text: sem ik r d n Absolute Maximum Ratings Symbol V cES R g e = 20 k ii V cG R lc Tease ” 25/80 O Tease = 25/80 °C; tp = 1 ms I CM V ges Ptot per IGBT/D1/D8, T „ » = 2 5 °C Tj, Tag Vjsol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68T.1 Diodes 91 If	OCR Scan		PDF
Semitrans M SKD 100 GAL Abstract: b6u 500 semikron SKD100 GAL 16 v 8 D DIP SKM 75 GAL 123 IGBT Text: s e MIKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tag Visol humidity climate Diodes 9) If IfM= - ICM Ifsm l2t Values Conditions ' Units Rge = 20 kQ Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min.	OCR Scan	m100gb12 xls-24 Semitrans M SKD 100 GAL b6u 500 semikron SKD100 GAL 16 v 8 D DIP SKM 75 GAL 123 IGBT	PDF
SKM100GB101D Abstract: SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D 40GD101D SKM150GB122D Text: s e m ik r d n SEMITRANS IGBT Modules 1000 to 1700 V Cross Reference List Previous to Actual Types 1 Case width) Sixpacks SEMITRANS 6 (45 mm) DUALS SEMITRANS 2 (34 mm) SK-BOOK ’90 / SUPPL. 91 1989-1991 SKM 15GD100D SK-BOOK ’92/'93 1992-1995 SKM 22GD101D	OCR Scan	15GD100D 25GD100D 22GD101D 22GD121D 40GD101D 40GD121D 40GB101D 40GB121D 50GB101D 50GB121D SKM100GB101D SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D SKM150GB122D	PDF

75GD12 Search Results

75GD12 Price and Stock

Infineon Technologies AG BSM75GD120DN2BOSA1

Infineon Technologies AG BSM75GD120DLCBOSA1

SEMIKRON SK75GD12T4TP

SEMIKRON SK 75 GD 12T4 T

SEMIKRON SK 75 GD 12T4 T 24914790

75GD12 Datasheets Context Search

f422

Untitled

Untitled

SKM75GD123D

Untitled

Untitled

Untitled

Untitled

SKM75GD123D

75GD120DN2

SKM 75 Gb 124 IGBT

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Semitrans M SKD 100 GAL

Untitled

75GD120DN2

skm 200 gb 122 d

SKM 75 GAL 123 IGBT

75GD124D

IEC 974-1

FZ1600R12KF4

75GD120DN2

D75GA

Semitrans M SKD 100 GAL

SKM100GB101D