74HC02 EQUIVALENT Search Results

74HC02

Abstract: 74HC02D 74HC02D-T HC02G 74HC02DR2G 74HC02DTR2G HC02 LS02 74hc02 on 74hc02 specifications
Contextual Info: 74HC02 Quad 2−Input NOR Gate High−Performance Silicon−Gate CMOS The 74HC02 is identical in pinout to the LS02. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. http://onsemi.com

HC02G

Abstract: 74HC02 74hc02 specifications HC02 74hc02d 74HC02DR2G 74HC02DTR2G LS02 74HC02 equivalent cmos 74HC02
Contextual Info: 74HC02 Quad 2−Input NOR Gate High−Performance Silicon−Gate CMOS The 74HC02 is identical in pinout to the LS02. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. Features • •

C9018

Abstract: TTL 74hc02 74HC02
Contextual Info: M O T O R O L A SC { L O G I C I 0E»|L3b7BSE MOTOROLA □ DÛDGb'ï fi I T 'V J-2,J SEMICONDUCTOR TECHNICAL DATA MC54/74HC02 Quad 2-In p u t NOR Gate High-Performance Siiicon-Gate CMOS J SUFFIX CERAMIC CASE 632-08 The MC54/74HC02 is identical in pinout to the LS02. The device inputs are com­

M74HC02

Contextual Info: M54HC02 M74HC02 / = T SGSTHOM SON RiflD S@i[L[l©,ÜWRÔOÊi QUAD 2-INPUT NOR GATE HIGH SPEED tPD = 8 ns (TYP. at VCc = 5V LOW POWER DISSIPATION lCc = 1 ;*A (MAX.) at Ta = 25°C HIGH NOISE IMMUNITY V nih = V n i L= 28% Vcc (MIN.) OUTPUT DRIVE CAPABILITY

CI 74LS02

Abstract: M74HC02B1N 74HC02 M74HC02 74hc02 specifications 54HC 74HC M54HC02
Contextual Info: SGS-THOMSON M54HC02 [LE gm»(gS_ M74HC02 QUAD 2-INPUT NOR GATE • HIGH SPEED tPD = 8 ns (TYP. at VCc = 5V ■ LOW POWER DISSIPATION lc c = 1 vA (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY Vnih = V n il= 28% Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY

74LS021

Abstract: M74HC02
Contextual Info: M54HC02 M74HC02 SGS-THOMSON = [L i f iS iö g i QUAD 2-INPUT NOR GATE HIGH SPEED tpo = 8 ns (TYP.) at Vcc = 5V LOW POWER DISSIPATION ICC = 1 (tA (MAX.) at TA = 25°C HIGH NOISE IMMUNITY V n i H = V n il = 28% Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

Contextual Info: SbE D m 7TETE37 13b • SGS-THOMSON M»ilLIOTMD ÊS S G S-THOMSON M54HCÖ2 M74HC02 T '* f3 -2 { QUAD 2-INPUT NOR GATE ■ HIGH SPEED tpD = 8 ns (TYP. at Vcc = 5V ■ LOW POWER DISSIPATION lCc = 1 i<A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY v NIH = V n i l = 28% Vcc (MIN.)

TTL 74hc02

Contextual Info: LTC1163/LTC1165 Triple 1.8V to 6V High-Side MOSFET Drivers DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Operates from 1.8V to 6V 0.01µA Standby Current 95µA Operating Current per Channel at 3.3V Fully Enhances N-Channel Switches No External Charge Pump Components

3055el

Abstract: 3055E MTD3055EL 3055 MTD 3055E LTC1163 LTC1163CN8 LTC1165 LTC1165CN8 RFD14N05LSM
Contextual Info: LTC1163/LTC1165 Triple 1.8V to 6V High-Side MOSFET Drivers U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Operates from 1.8V to 6V 0.01µA Standby Current 95µA Operating Current per Channel at 3.3V Fully Enhances N-Channel Switches No External Charge Pump Components

74VHC02

Abstract: VHC02 74HC02 74VHC02M 74VHC02MTC 74VHC02N 74VHC02SJ M14A M14D MTC14
Contextual Info: 74VHC02 Quad 2-Input NOR Gate General Description Features The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power

TTL 74hc02

Contextual Info: National Semiconductor 74VHC02 Quad 2-Input NOR Gate General Description Features The 'VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bi­ polar Schottky TTL while maintaining the CMOS low power

Contextual Info: S E M IC O N D U C T O R tm 74VHC02 Quad 2-Input NOR Gate General Description Features The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bi­ polar Schottky TTL while maintaining the CMOS low power

VHC02

Abstract: CMOS Quad 2-Input NOR Gate 74VHC02MTC 74HC02 74VHC02 74VHC02M 74VHC02MSC 74VHC02N 74VHC02SJ M14A
Contextual Info: 74VHC02 Quad 2-Input NOR Gate General Description Features The ’VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power

VHC02

Abstract: 74VHC02 diode databook package outline J-STD-020B 74HC02 74VHC02M 74VHC02MTC 74VHC02MTCX 74VHC02MX 74VHC02N
Contextual Info: Revised February 2005 74VHC02 Quad 2-Input NOR Gate General Description Features The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low

Contextual Info: S E M IC O N D U C T O R 74VHC02 Quad 2-Input NOR Gate General Description Features The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate tabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bi­ polar Schottky TTL while maintaining the CMOS low power

74LS02 function table

Abstract: M74HC02
Contextual Info: M54HC02 M74HC02 SGS-THOMSON 1ILG QUAD 2-INPUT NOR GATE HIGHSPEED = 6 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 "C HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: TC74LVQ02F/FN/FS QUAD 2-INPUT NOR GATE The TC74LVQ02 is a high speed CMOS 2-INPUT NOR GATE fabricated w ith silicon gate and double-layer metal wiring C2M O S technology. Designed for use in 3.3 Volt systems, it achieves high speed operation w hile maintaining the CMOS low power

74HC00 SN74HC00D 74HC Series IC

Abstract: 74hc00t quad 74HC04 NOT GATE datasheet 74hc08m 74HC00M 74HC08T 74hc04n TI 74HC00 74hc00 datasheet 74HC04 Toshiba
Contextual Info: 74ABT & 74HC Standard Logic, T.I. & Others Thousands of new ICs are in the pipeline for addition and not shown below. Call us to see if you can save 10-30%. Semiconductors 74ABTXXX CMOS Logic Competitive Cross Reference Guide Family ABT Package DIP SOIC TI

Contextual Info: TC74LVX02F/FH/FS QUAD 2 -IN PU T NOR GATE The TC 74LV X 02 is a high speed CM OS 2-IN PU T NOR GATE fabricated with silicon gate C 2MOS technology. D esigned for use in 3.3 Volt system s, it achieves high speed operation while m ain tain in g the CMOS low power dissipation.

Contextual Info: MP8784AB MP8784AB APPLICATION BOARD DOCUMENTATION Evaluation Kit Parts List A Preview of a Common Test Configuration This kit contains the following: The board is set up as a general A/D test circuit where the references are fixed. Figure 2. shows the overall circuit, Figure 5. shows the PC board layout and jumper

IC PIN CONFIGURATION OF 74LS02

Abstract: 74LS02 gate diagram 74LS02 pin configuration M74HC02DP M74HC02 74LS02 4000B M74HC02P
Contextual Info: M IT S U B IS H I HIGH S P E E D C M O S M74HC02P M74HC02DP Q U A D R U P L E 2 -IN P U T P O S IT IV E NOR G A TE DESCRIPTION The M 74H C 02 is a sem ico ndu ctor integrated circuit con­ sisting of four 2-input p o sitive -lo g ic NOR, usable as nega­ tiv e -lo g ic NAND gates.

Contextual Info: TC74LVX02F/FN/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX02F,TC74LVX02FN,TC74LVX02FT Quad 2-Input NOR Gate The TC74LVX02F/ FN/ FT is a high-speed CMOS 2-input NOR gate fabricated with silicon gate CMOS technology. Designed for use in 3-V systems, it achieves high-speed operation while

74HC02

Abstract: TC74LVX02F TC74LVX02FN TC74LVX02FT
Contextual Info: TC74LVX02F/FN/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX02F,TC74LVX02FN,TC74LVX02FT Quad 2-Input NOR Gate The TC74LVX02F/ FN/ FT is a high-speed CMOS 2-input NOR gate fabricated with silicon gate CMOS technology. Designed for use in 3-V systems, it achieves high-speed operation while

tptn-m

Contextual Info: TOSHIBA TC74LVX02F/FN/FS Quad 2 - Input NOR Gate The TC74LVX02 is a high speed C M O S 2-INPUT NOR GATE fabricated with silicon gate C 2M O S technology. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaining the C M O S low power dis­