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    748 TRANSISTOR ON Search Results

    748 TRANSISTOR ON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    748 TRANSISTOR ON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n7505

    Abstract: IRF5Y9540CM
    Text: INCH-POUND MIL-PRF-19500/748 3 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.


    Original     		PDF MIL-PRF-19500/748 2N7505T3, MIL-PRF-19500. O-257AA 2N7505T3 IRF5Y9540CM 2n7505 IRF5Y9540CM

    RS4-1D1-B

    Abstract: RS4-1D1-A ac spst relays spst relays scr snubber
    Text: Selector Guide Solid State Relays Series Features RS1 RS2 • Opto Isolated • Upright • Industry Standard Package Contact Arrangement • Compatible with TTL Gates • Push−on Connector Terminals • Mounts on a TO3 Transistor Heat Sink RS3 RS4 • AC and DC Models


    Original     		PDF 16-Lead 24VDC 12VDC 280VAC 32VDC 10VDC 260VAC 530VAC 100VDC RS4-1D1-B RS4-1D1-A ac spst relays spst relays scr snubber

    Untitled

    Abstract: No abstract text available
    Text: Features • • • Compatible with TTL Gates Push−On Connector Terminals Mounts on a TO3 Transistor Heat Sink RS2 Series Printed Circuit Board Mountable Solid State Relay, 7 Amp. D37 1.500 38.1 1.188 (30.2) .325 (8.3) INPUT .670 (17.0) Max OUTPUT .500


    Original     		PDF 12VDC 15mADC 2500VAC 500VDC) 240VAC

    uzj845

    Abstract: 748 transistor on UZJ313 UZJ3325 chloride ups circuit diagram transistor 335 UZJ3245 UZJ844 UZJ316 UZJ3225
    Text: UZJ3 Series U-SHAPED TYPE MICRO-PHOTOSENSORS INDUSTRY’S SMALLEST SIZE ENABLES SPACE SAVING AND QUICK INSTALLATION! Quick Fitting Hook-up Connector Easy to maintain connector type models are available. Its exclusive connector is the industry’s first hook-up connector.


    Original     		PDF UZJ31 UZJ33, UZJ335) uzj845 748 transistor on UZJ313 UZJ3325 chloride ups circuit diagram transistor 335 UZJ3245 UZJ844 UZJ316 UZJ3225

    RS2-1D7-35

    Abstract: 5vdc relay 12VDC TTL RS2-1D7-33
    Text: Features • • • Compatible with TTL Gates Push−On Connector Terminals Mounts on a TO3 Transistor Heat Sink RS2 Series Printed Circuit Board Mountable Solid State Relay, 7 Amp. D37 1.500 38.1 1.188 (30.2) .325 (8.3) INPUT .670 (17.0) Max OUTPUT .500


    Original     		PDF RS2-1D7-33 RS2-1D7-35 12VDC 15mADC 2500VAC 500VDC) 240VAC RS2-1D7-35 5vdc relay 12VDC TTL RS2-1D7-33

    UZJ3335

    Abstract: UZJ334 UZJ845 UZJ323 UZJ316 UZJ3245 UZJ313 transistor case To 106 UZJ3325 UZJ311
    Text: UZJ3 series 0.6.8 16:42 Page 23 UZJ3 Series U-SHAPED TYPE MICRO-PHOTOSENSORS INDUSTRY’S SMALLEST SIZE ENABLES SPACE SAVING AND QUICK INSTALLATION! Quick Fitting Hook-up Connector Easy to maintain connector type models are available. Its exclusive connector is the industry’s first


    Original     		PDF UZJ33, UZJ335) UZJ3335 UZJ334 UZJ845 UZJ323 UZJ316 UZJ3245 UZJ313 transistor case To 106 UZJ3325 UZJ311

    UZZ8031

    Abstract: 748 DIODE UZA801 UZA802 UZN11 UZN115 UZZ8032 UZZ8131 UZZ8132 acceleration sensor matsushita
    Text: UZN10.fm 1 y [ W Q O O O N U P O œ @ y j œ @ O P P X “ UZN10 Series WATER DETECTION SENSORS DETECTS WATER.RELIABLY! Strong beam Power As the beam power is strong, its beam can pass through not only translucent containers PFA tanks, etc. but also opaque containers of shampoo bottles,


    Original     		PDF UZN10 UZN10 SUS304) 472inch) AACT1B11E 200003-3YT UZZ8031 748 DIODE UZA801 UZA802 UZN11 UZN115 UZZ8032 UZZ8131 UZZ8132 acceleration sensor matsushita

    748 transistor on

    Abstract: "by 236" diode UZQ300 UZQ831 UZQ301 UZQ302 UZQ303 UZQ304 UZQ305 UZQ306
    Text: UZQ3 series 232-242 0.6.10 14:44 Page 1 UZQ30 Series SQUARE-SHAPED MINIATURE PROXIMITY SENSORS HIGH PERFORMANCE IN SURPRISINGLY SMALL BODY WITH COST EFFECTIVENESS The Smallest Size Close Mounting Mountable in a tight space as the sensor is just 6‫ן‬6‫ן‬19mm


    Original     		PDF UZQ30 6619mm 748inch UZQ304 UZQ306 UZQ30 UZQ831 787inch 2-M30 748 transistor on "by 236" diode UZQ300 UZQ831 UZQ301 UZQ302 UZQ303 UZQ304 UZQ305 UZQ306

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S010N AFT27S010NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S010N AFT27S010NT1

    zener n7

    Abstract: UZD62 W10H DC-12 DC-13 EN50081-2 UZD60 UZD61 UZD621 UZD861
    Text: UZD6 series 0.6.8 15:52 Page 5 FIXED-FOCUS REFLECTIVE TYPE PHOTOELECTRIC SENSORS UZD6 Series PRECISE OBJECT DETECTION IN LIMITED AREA Stable Sensing by Fixed-focus No matter to install in a limited space. 100 3.937 50 1.969 30 1.181 Central sensing distance


    Original     		PDF 181inch UZD621 394inch 709inch 2-M30 UZD862 SUS304 M316mm zener n7 UZD62 W10H DC-12 DC-13 EN50081-2 UZD60 UZD61 UZD861

    transistor zc

    Abstract: transistor zx series transistor C3 C3EX
    Text: Cell-Based IC Crystal Oscillators Introduction Crystal Theory This Engineering Application Note EAN describes the use of the Crystal Oscillator parts in the ATMEL Libraries. The mechanical impedance of a crystal for one particular series resonant frequency k (the fundamental and its overtones) can be electrically modeled by a


    Original     		PDF SC-23, transistor zc transistor zx series transistor C3 C3EX

    UZG121

    Abstract: UZG120 UZG1205 UZG130 UZG140 UZH130 UZH200 UZH301 UZH302 UZH462
    Text: UZG series 0.6.7 15:56 Page 1 AMPLIFIER-SEPARATED PHOTOELECTRIC SENSORS UZG/H Series SMALL PACKAGE POWER & FLEXIBILITY Just Press the Buttons Anyone can achieve the optimum sensitivity setting with the press of a button. ᕃ Press “ON” button on the mark.


    Original     		PDF 394inch M312mm 472inch UZH821 UZH812 M314mm 551inch UZG121 UZG120 UZG1205 UZG130 UZG140 UZH130 UZH200 UZH301 UZH302 UZH462

    MOSFET J132

    Abstract: J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114
    Text: Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		PDF MRF8S7170N MRF8S7170NR3 MOSFET J132 J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114

    MOSFET J132

    Abstract: J132 MOSFET J127 mosfet MRF8S7170N AN1955 MRF8S7170NR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		PDF MRF8S7170N MRF8S7170NR3 MOSFET J132 J132 MOSFET J127 mosfet MRF8S7170N AN1955 MRF8S7170NR3

    transistor J128

    Abstract: j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S7120N MRF8S7120NR3 transistor J128 j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		PDF MRF8S7170N MRF8S7170NR3

    5007

    Abstract: COMMUNICATIONS TRANSISTOR CORP EC-0006 EC-5007
    Text: EC-5007 PRELIMINARY DATA LNA / DOWNCONVERTER 500–3000 MHz Features n n n n n n n n Single 3.0 to 5.0 Vdc Operation Separate LNA and Active Downconverter functions Balanced IF Output to 200 MHz Power-down Capability Low Power Consumption Low LO Power Use EC-0006 for LO drive


    Original     		PDF EC-5007 EC-0006 EC-5007 SS-000079-000 5007 COMMUNICATIONS TRANSISTOR CORP

    ic smd 851

    Abstract: KPA1890 transistor P 24 smd
    Text: IC IC SMD Type MOS Field Effect Transistor KPA1890 TSSOP-8 Features Unit: mm Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS on 1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 m


    Original     		PDF KPA1890 ic smd 851 KPA1890 transistor P 24 smd

    transistors BC 543

    Abstract: TRANSISTOR BC 748 transistor BC 543
    Text: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration


    OCR Scan     		PDF Q62702-2373 OT-363 fiS35bD5 235LD5 BC857S 0535bD5 012Dbl3 transistors BC 543 TRANSISTOR BC 748 transistor BC 543

    PHN110

    Abstract: MS-012AA
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor PHN110 FEATURES DESCRIPTION • High-speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 S08 package. • No secondary breakdown • Very low on-resistance.


    OCR Scan     		PDF PHN110 OT96-1 OT96-1 076E03S MS-012AA 1997Jun PHN110 MS-012AA

    MARKING CODE Zi sot363

    Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
    Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-C2419 OT-363 27llector-base MARKING CODE Zi sot363 WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS

    GP1A71A1

    Abstract: GP1A71A GP1A71 DF3-3S-2R26 DF3-3S-2R28 D2350
    Text: SHARP GP1A71A/GP1A71A1 • 1. 2. 3. Features Compact type Snap-in mounting type Can be mounted on 3 different thickness boards 1.0mm, 1.2mm, 1.6mm 4. 3-pin connector terminal ■ 1. 2. 3. GP1A71A/GP1A71A1 Com pact S ize O PIC Photointerrupter w ith C onnector


    OCR Scan     		PDF GP1A71A/GP1A71A1 GP1A71A GP1A71A1 GP1A71A GP1A71A1 GP1A71 DF3-3S-2R26 DF3-3S-2R28 D2350

    GP1A71A1

    Abstract: No abstract text available
    Text: SHARP GP1A71A/GP1A71A1 • Features 1. Com pact type 2. Snap-in m ounting type 3. Can be m ounted on 3 different thickness boards 1.0mm, 1.2mm, 1.6mm 4. 3-pin connector term inal GP1A71A/GP1A71A1 Photofciterrupter with Connector ■ OuUne Dim ensions G P1A71A


    OCR Scan     		PDF GP1A71A/GP1A71A1 P1A71A GP1A71A1 P1A71A GP1A71A1