742 794 05 Search Results

VK200 inductance

Abstract: 742 wurth 742 794 50 vk200 vk200 chokes 53ri 742 794 05
Contextual Info: Würth Elektronik GmbH & Co. KG Verbindungstechnik Riedenstraße 16 D-74635 Kupferzell Telefon: +49 (0 79 44) 91 93-0 Telefax: (+49) (0 79 44) 91 93-51 WURTH ELEKTRONIK Verbindungstechnik EM V-Kom ponenten Line Chokes WE-ZB Selfs de protection WE-ZB • Broadband screening

T1059N

Abstract: T1589N T2159N T308N T458N T709N 16-04 thyristor
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor T

T1059N

Abstract: T1589N T2159N T308N T458N T709N
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor T

BB 722

Abstract: BB 1704 BB 4130
Contextual Info: B2B High Density SMT Connectors Board to Board Connectors .050/ 1.27mm Pitch Female Table of Models Description: Molded B2B® Connector (BB) Material: High Temp. Liquid Crystal Polymer (LCP) Index: -40°C to 260°C (-40°F to 500°F) Male Description: Molded B2B® Connector (BA)

BB 722

Abstract: 30x8 ASTM-B-488 C17200 connector b2b smt
Contextual Info: B2B High Density SMT Connectors Board to Board Connectors .050/ 1.27mm Pitch Female Table of Models Description: Molded B2B® Connector (BB) Material: High Temp. Liquid Crystal Polymer (LCP) Index: -40°C to 260°C (-40°F to 500°F) Male Description: Molded B2B® Connector (BA)

400P Crystal

Contextual Info: B2B High Density SMT Connectors Board to Board Connectors .050/ 1.27mm Pitch Female Description: Molded B2B® Connector (BB) Material: High Temp. Liquid Crystal Polymer (LCP) Index: -40°C to 260°C (-40°F to 500°F) Male Table of Models Description: Molded B2B® Connector (BA)

T1059N

Abstract: T1589N T2159N T308N T458N T459N T709N 606 thyristor
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 109 159 195 239 291 366 443 514 578 698 102

T1059N

Abstract: T1589N T2159N T308N T458N T459N T709N KD202V
Contextual Info: W1C - Schaltung ~ Anschlußspannung 660 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 109 159 195 239 291 366 443 514 578 698 102

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

thyristor 406

Abstract: T2159N T308N T1059N T1589N T458N T459N T709N w1c 440
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 109 159 195 239 291 366 443 514 578 698 102

Contextual Info: B 2 B S M T C on n e c t ors B 2 B® S M T B o ard t o B o ard C on n ect ors B2B® High Density SMT Connectors from Advanced are designed for long-life applications and robust handling. Superior quality is designed in from our screw-machined terminals with multi-finger contacts to our

PEC 622

Contextual Info: B 2 B S M T C on n e c t ors N o v e m b er 2 0 0 6 B 2 B® S M T B o ard t o B o ard C on n ect ors B2B® High Density SMT Connectors from Advanced are designed for long-life applications and robust handling. Superior quality is designed in from our screw-machined terminals

1168 bga

Contextual Info: B 2 B S M T C on n e c t ors B 2 B® S M T B o ard t o B o ard C on n ect ors B2B® High Density SMT Connectors from Advanced are designed for long-life applications and robust handling. Superior quality is designed in from our screw-machined terminals with multi-finger contacts to our

BB 4130

Contextual Info: B 2 B S M T C on n e c t ors N o v e m b er 2 0 0 6 B 2 B® S M T B o ard t o B o ard C on n ect ors B2B® High Density SMT Connectors from Advanced are designed for long-life applications and robust handling. Superior quality is designed in from our screw-machined terminals

sl2 357

Contextual Info: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold

NEC k 2134 transistor

Abstract: mini-lvds source driver 804 ch mini-lvds source driver v19 423 diode v6 33 mini-lvds SS1A diode V105 transistor NEC D 587 mini-lvds driver
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD160010 384-/360-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256 GRAY SCALES, mini-LVDS INTERFACE SUPPORTED DESCRIPTION The µ PD160010 is a source driver for TFT-LCDS that supports the display of 256 gray scales and employs mini-LVDS

NEC k 2134 transistor

Abstract: X1025 mini-lvds mini-lvds source driver R222 423 023 diode v6 33 ic 1373 nec 1178 NEC m 2134 transistor transistor NEC D 587
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD160010 384-/360-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256 GRAY SCALES, mini-LVDS INTERFACE SUPPORTED DESCRIPTION The µ PD160010 is a source driver for TFT-LCDS that supports the display of 256 gray scales and employs mini-LVDS

NEC k 2134 transistor

Abstract: dh 1117 ic 1373 S204 CM 1621 S1 PD1600 r190
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD160010 384-/360-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256 GRAY SCALES, mini-LVDS INTERFACE SUPPORTED DESCRIPTION The µ PD160010 is a source driver for TFT-LCDS that supports the display of 256 gray scales and employs mini-LVDS

x 13 v

Abstract: BH 1117 F SUMITOMO 1085 S204 804 ch mini-lvds source driver mini-LVDS and TFT-LCD Timing Controller R40 AH mini-lvds receiver
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TF5S03ZZ

Abstract: transformer dash 2 b-5
Contextual Info: Trans American Transformer, Inc. 26 H U L SE RD. • E. S E T AU K E T N E W V . I R h E N G I N E E R I N G H O T L I NE 51 6> 928-07* W 6 i TEL: 151 6 928-0762 FAX: 1516) 928-0852 THE SOURCE FOR M I LI TA R Y M A G N E T I C S MINIATURE 400HZ power transformers

Contextual Info: Outline Dimensions [U n it : m m ] Package : AX057 ie e t f * i 3 0.1 * Si Axial Taping or Radial Taping i n _ jSsj 27.5*i , (2) ' •I 275„ Fig. 2-1 °— m— °© Fig. 2-2 °® Package : AX06 Package : AX06 Package : AX06 n Package : AX078 •nil

ANSI X3.263-1995 standard

Abstract: ao 4416 AMD 586 embedded REJ10B0152 pir chip pir human RJ45 to usb convert 2M Words x 32 Bits x 4 Banks (256-MBIT) 32-Bit sipo Shift Register 759 power op amp
Contextual Info: REJ09B0237-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7619 Group Hardware Manual

v69 648

Abstract: v106 S204 1940 273 S204-S181 15.4" wsxga NEC V17 14V181 X1525
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD160010 384/360 出力 TFT-LCD 用ソース・ドライバ（256 階調，mini-LVDS インタフェース対応） µ PD160010 は，mini-LVDS インタフェースを採用した 256 階調表示対応の TFT-LCD 用ソース・ドライバです。内

g2ns

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Contextual Info: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold