72m transistor
Abstract: SCT-595 marking E1 SCT-595 marking PAs SCT-595 kw33 transistor marking 72m
Text: BCP 72M PNP Silicon AF Power Transistor 4 Drain switch for RF power amplifier stages For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP 72M PAs Pin Configuration Package
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VPW05980
SCT-595
Oct-20-1999
72m transistor
SCT-595
marking E1 SCT-595
marking PAs SCT-595
kw33
transistor marking 72m
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CES2302
Abstract: No abstract text available
Text: CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS ON = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package.
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CES2302
OT-23
OT-23
CES2302
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MARKING 54M SOT-23
Abstract: DMN3150L DMN3150L-7 J-STD-020D
Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V
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DMN3150L
AEC-Q101
OT-23
J-STD-020D
DS31126
MARKING 54M SOT-23
DMN3150L
DMN3150L-7
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: Product specification DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V RDS(ON) < 115mΩ @ VGS = 2.5V
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DMN3150L
AEC-Q101
OT-23
J-STD-020
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Untitled
Abstract: No abstract text available
Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 54m @ VGS = 10V RDS(ON) < 72m @ VGS = 4.5V RDS(ON) < 115m @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance
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DMN3150L
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
DS31126
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DMN3150L
Abstract: DMN3150L-7
Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V
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DMN3150L
AEC-Q101
OT-23
J-STD-020
DS31126
DMN3150L
DMN3150L-7
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Untitled
Abstract: No abstract text available
Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • Low On-Resistance: • RDS ON < 54mΩ @ VGS = 10V • RDS(ON) < 72mΩ @ VGS = 4.5V RDS(ON) < 115mΩ @ VGS = 2.5V Low Gate Threshold Voltage
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DMN3150L
AEC-Q101
OT-23
J-STD-020
DS31126
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72m transistor
Abstract: transistor marking 72m C2517 Q62702-C2517 SCT-595 marking PAs SCT-595
Text: BCP 72M PNP Silicon AF Power Transistor Preliminary data 4 • Drain switch for RF power amplifier stages • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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VPW05980
Q62702-C2517
SCT-595
Jun-05-1998
72m transistor
transistor marking 72m
C2517
Q62702-C2517
SCT-595
marking PAs SCT-595
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CEM4600
Abstract: TF36
Text: CEM4600 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).
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CEM4600
CEM4600
TF36
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Untitled
Abstract: No abstract text available
Text: CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON).
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CED4279/CEU4279
O-252-4L
O-252-4L
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Boundary Scan JTAG Logic
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644184A-A, 44644364A-A 72M-BIT DDR II SRAM 4-WORD BURST OPERATION Description The μPD44644184A-A is a 4,194,304-word by 18-bit and the μPD44644364A-A is a 2,097,152-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
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PD44644184A-A,
4644364A-A
72M-BIT
PD44644184A-A
304-word
18-bit
PD44644364A-A
152-word
36-bit
Boundary Scan JTAG Logic
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pd446
Abstract: PD4464
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644095A-A, 44644185A-A 72M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44644095A-A is a 8,388,608-word by 9-bit and the μPD44644185A-A is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
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PD44644095A-A,
4644185A-A
72M-BIT
PD44644095A-A
608-word
PD44644185A-A
304-word
18-bit
pd446
PD4464
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HN58V1001TI-25E
Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,
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REJ01C0001-1000
HN58V1001TI-25E
R1EX25256ATA00I
renesas tcam
tcam renesas
cypress tcam
idt tcam
r1qaa7218rbg
R1LV0816A
M5M51008DFP-55H
R1LV1616RBG-7SI
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CY7C1441V33
Abstract: CY7C1443V33
Text: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM Features inputs include all addresses, all data inputs, addresspipelining Chip Enable CE , Burst Control Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd,
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CY7C1441V33
CY7C1443V33
CY7C1447V33
36/2M
18/512K
133-MHz
36/2M
18/512K
150-MHz
CY7C1441V33
CY7C1443V33
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CY7C1444V33
Abstract: No abstract text available
Text: CY7C1444V33 CY7C1445V33 PRELIMINARY 1M x 36/2M x 18 Pipelined DCD SRAM Features • • • • • • • • • • • • • • • • Fast clock speed: 250, 200, and 167 MHz Provide high-performance 3-1-1-1 access rate Fast access time: 2.7, 3.0 and 3.5 ns
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CY7C1444V33
CY7C1445V33
36/2M
CY7C1444V33/CY7C1445V33
300-MHz
BG119)
CY7C1444V33
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Untitled
Abstract: No abstract text available
Text: CY7C1444V25 CY7C1445V25 PRELIMINARY 1M x 36/2M x 18 Pipelined DCD SRAM Features • • • • • • • • • • • • • • • • Fast clock speed: 300, 250, 200, and 167 MHz Provide high-performance 3-1-1-1 access rate Fast access time: 2.3, 2.7, 3.0 and 3.5 ns
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CY7C1444V25
CY7C1445V25
36/2M
CY7C1444V25/CY7C1445V25
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Untitled
Abstract: No abstract text available
Text: CY7C1447V25 CY7C1443V25 CY7C1441V25 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-Thru SRAM Features inputs are gated by registers controlled by a positiveedge-triggered clock input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining Chip
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CY7C1447V25
CY7C1443V25
CY7C1441V25
36/2M
18/512K
133-MHz
x18/512K
150-MHz
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CY7C1441V33
Abstract: CY7C1443V33
Text: CY7C1441V33 CY7C1443V33 CY7C1447V33 PRELIMINARY 1M x 36/2M x 18/512K x 72 Flow-through SRAM Features •Supports 133–MHz bus operations •1M x 36/2M x 18/512K x 72 common I/O •Fast clock–to–output times — 6.5 ns for 133–MHz device — 7.5 ns (for 117–MHz device)
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CY7C1441V33
CY7C1443V33
CY7C1447V33
36/2M
18/512K
119-ball
165-ball
100-pin
CY7C1441V33
CY7C1443V33
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 72M PNP Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage o II LD Q62702-C2517 II PAs Package
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Q62702-C2517
SCT-595
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transistor marking 72m
Abstract: 72m transistor marking PAs
Text: SIEMENS BCP 72M PNP Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage O II LO T" Package OQ II Q62702-C2517
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Q62702-C2517
SCT-595
transistor marking 72m
72m transistor
marking PAs
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2SD2118
Abstract: 2SD2118F5 T200 T201
Text: h ~7 > v 7 s £ /Transistors 9 Q n 9 1 A ft • 1 ° " 2SD2118F5 ^ Epitaxial Planar NPN Silicon Transistor fcW âiW tiW fàf& /\jyN Freq. Power Amp. X h P < K 7 7 7 y j.ffl/S tro b o Flash. • W ß v jsH/Dimensions Unit : mm • fc £ 1) VcE(sat) # '•(£^ 0
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2SD2118F5
SC-63
2SD2118
2SD2118F5
T200
T201
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BCP51
Abstract: BCP52 BCP53 BCP54 BCP54-10 BCP54-16 BCP55 BCP56 FA 5516 ScansUX40
Text: 71100213 OObflMö? BCP54 BCP55 BCP56 ÖTfl • P H I N 7 V SILICON PLANAR EPITAXIAL TRANSISTO RS Medium power npn transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. They are general purpose transistors, primarily designed for audio amplifier output
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7110fl2t,
BCP54
BCP55
BCP56
BCP51,
BCP52
BCP53
BCP54
BCP56
BCP51
BCP54-10
BCP54-16
FA 5516
ScansUX40
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9
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O-204
C67078-A1008-A8
C67078-A1008-A9
C67078-A1008-A10
fl235bG
6235b05
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Untitled
Abstract: No abstract text available
Text: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 ISSUE 3 JUNE 1996_ FEATURES * 625mW POWER DISSIPATION * * lc CONT 2.SA lc Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed)
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FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
625mW
FMMT717
FMMT617
FMMT618
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