727 TRANSISTOR POWER VALUES Search Results

hengstler 890 manual

Abstract: hengstler 890 hengstler 890 counter hengstler, 890 signo 727 Hengstler relay 890 Hengstler Hengstler counter 890 signo 727 operation manual Hengstler counter
Contextual Info: Betriebsanleitung Operating instructions signo 727.1 Positionsanzeige mit/ohne Grenzwerte Position-Indicator with/without limit values Inhaltsverzeichnis Contents 1. 2. 2.1. 2.2. 2.2.1 2.2.2 2.3. 3. 3.1. 3.2. 3.3. 4. 4.1 4.2 4.3 4.4 5. 6. 7. 7.1. 7.2. 7.3

hengstler 890

Abstract: hengstler 890 counter 727 Transistor power values Hengstler relay 890 hengstler, 890 signo 727 pulse counter hengstler Hengstler counter 890 bi colour led 230v hengstler signo
Contextual Info: Operating Instructions Contents 1. Safety instructions 2. Mounting of the position indicator 2.1 Mounting the position indicator 2.2. Connections 2.2.1 Terminal connections 2.2.2 Description of input and output 2.3 Description of function of position indicator

T 402 transistor

Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
Contextual Info: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte­ grated circuits consisting of vertical NPN and PNP

Contextual Info: .O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLF147 VHP power MOS transistor PIN CONFIGURATION FEATURES • High power gain « Low intermodulation distortion • Easy power control • Good thermal stability

GSO 69

Contextual Info: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

faulhaber BLD 5018

Abstract: minimotor SA 22 TRIMMING POTENTIOMETER 10k 10K preset potentiometer 10K potentiometer minimotor dc motor minimotor dc motor FAULHABER DC SERVO MOTOR CONTROL curcuit Faulhaber minimotor SA potentiometer 10k
Contextual Info: Servo Amplifier 2-Quadrant PWM for Brushless DC-Servomotors Series BLD 5018 Operating Instructions Index Chapter  1. Description page 2 2. Illustration 2 3. Specification 3 4. Dimensions and weight 3 5. 5.1 Safety notes Connection informations 4 4 6. Preparing

BFW61

Contextual Info: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA

BFW61

Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
Contextual Info: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.

727 Transistor power values

Abstract: transistor 3bt marking FR PNP SOT323 3BT MARKING bc857cw 3Mt transistor BC856BW
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W; BC858W FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 80) 1 • S-mini package. 2 emitter 3 collector base APPLICATIONS • General purpose switching and amplification.

727 Transistor power values

Abstract: BST110 transistor wz
Contextual Info: • bbSB^ai OGSa'iTM fi'îO « A P X N AMER PHILIPS/DISCRETE BST110 b?E T> P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.

AN105 infineon

Abstract: BCR450 BCR450U BCR401U LXML-PWC1-0040 BCR402u boost bcr401 BCR402R hg lamp ballast LED lights manufacturing technology
Contextual Info: A pp li c at io n N o t e, R e v . 1. 0 , N ov e m be r 2 00 8 A p p li c a t i o n N o t e N o . 1 5 9 L o w - C o s t, L i n e a r M o de , 7 1 % E f f i c i e n c y 38 0 m A L E D D r i v e r D em o u s i n g t h e B C R 4 0 1 R , B C X 6 8 & LUXEON Rebel LEDs

diode U3d

Abstract: diode marking code 777 diode U3d on PL360D u3d diode Transil diodes diode MARKING CODE U3D
Contextual Info: Æ T SGS-THOMSON ì* [ S & [ i ¥ [e m d PL360D (§ ì TRANSIL FEATURES • ■ . ■ > PEAK PULSE POWER= 300 W <§> 1ms. BREAKDOWN VOLTAGE = 330 V min. UNIDIRECTIONAL TRANS IL. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR . DESCRIPTION

727 Transistor power values

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUW84

Abstract: transistor BUW84
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT82 package. APPLICATIONS PIN DESCRIPTION 1 base 2 collector; connected to mounting base

727 Transistor power values

Contextual Info: SIEMENS BCR191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in bias resistor (R1=22kß, R2=22kfl) Type BCR191S Marking Ordering Code Pin Configuration

BLF542

Abstract: UBB776
Contextual Info: Philips Semiconductors 003010b HR M APX Product specification UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES b^E T> PIN CONFIGURATION • High power gain • Easy power control o • Gold metallization • Good thermal stability • Withstands full load mismatch

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-elfect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A

Contextual Info: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;

bt1 marking

Abstract: SOT89 transistor marking with lb 135
Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistors BST15; BST16 FEATURES PINNING • Low current max. 200 mA PIN • High voltage (max. 300 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • General purpose switching and amplification.

BST60

Abstract: BST50
Contextual Info: BST50 BST51 BST52 J V N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a m icrom iniature SOT-89 package. P-N-P complements are BST60, 6 1 ,6 2 respectively.

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

Contextual Info: r Z Z SGS-THOMSON ^ 7 # HmemBiHCTBIBBOOIBi BYW 100-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . HIGH SURGE CURRENT ■ THE SPECIFICATIONS AND CURVES EN­