pinout lcd
Abstract: No abstract text available
Text: HI3197 Semiconductor Data Sheet October 1998 10-Bit, 125 MSPS D/A Converter Features • Resolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Bits The HI3197 is a high-speed D/A converter which can perform the multiplexed input of the two system 10-bit data.
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HI3197
10-Bit,
HI319
HI3197JCQ
HI3197
10-bit
1-800-4-HARRIS
pinout lcd
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AM79R70
Abstract: HC55183 HC55184 PBL3860 harris slic
Text: This data sheet has been combined with document FN4519 Please see HC5518X FN4519 Semiconductor August 1998 PRELIMINARY Short Loop Ringing SLIC 55184) thor () Key features across these products include: Low power bject ywords (Harris Semiconductor, Telecom, SLICs,
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FN4519
HC5518X
FN4519)
HC55183
HC55184
HC55183,
HC55184)
1-800-4-HARRIS
AM79R70
HC55184
PBL3860
harris slic
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LA 4127
Abstract: 5502B AN549 HC3-5502B1-5 HC4P5502B1-5 HC-5502B HC-5502B1 HC9P5502B1-5
Text: Semiconductor April 1999 File Number SLIC Subscriber Line Interface Circuit Features The Harris SLIC incorporates many of the BORSHT function on a single IC chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is
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HC-5502B
1-800-4-HARRIS
LA 4127
5502B
AN549
HC3-5502B1-5
HC4P5502B1-5
HC-5502B
HC-5502B1
HC9P5502B1-5
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HI5702
Abstract: HI5703 HI5703EVAL HI5703KCB HI5746 HI5767 HI57
Text: NDS Semiconductor OMME C E R ARRIS 46KCB NS, H G 57 I S E D OR HI Data Sheet November 1998 W B E C N 4 / FOR 5767 I H E TH HI5703 File Number 3950.7 10-Bit, 40 MSPS A/D Converter Features The HI5703 is a monolithic, 10-bit, analog-to-digital converter fabricated in Harris’ BiCMOS process. It is
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46KCB
HI5703
10-Bit,
HI5703
10MHz
250MHz
1-800-4-HARRIS
HI5702
HI5703EVAL
HI5703KCB
HI5746
HI5767
HI57
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HI1-0381-2
Abstract: HI1-0381-5 HI1-0384-2 HI2-0381-2 HI2-0381-5 HI3-0381-5 HI-381 HI-387
Text: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark HI-381 thru HI-387 UCT TE PROD E PRODUCT OBSOLE ITUT E SUBST -7747 L IB S S O P Sheet cations 1-800-442 FOR AData li p m p is.co al A call Centr il: centapp@harr
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HI-381
HI-387
Hl-381
Hl-387
1-800-4-HARRIS
HI1-0381-2
HI1-0381-5
HI1-0384-2
HI2-0381-2
HI2-0381-5
HI3-0381-5
HI-387
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12v relay 8 pin diagram
Abstract: No abstract text available
Text: H April 1999 C - 5 5 File Num ber 2 B 1 4127.2 SLIC Subscriber Line Interface Circuit Features The Harris SLIC incorporates many of the BORSHT function on a single 1C chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is
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HC-5502B
1-800-4-HARRIS
12v relay 8 pin diagram
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traveler
Abstract: No abstract text available
Text: FSL110D, FSL110R Semiconductor Data Sheet 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s October 1998
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FSL110D,
FSL110R
1-800-4-HARR
traveler
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Untitled
Abstract: No abstract text available
Text: FSYA150D, FSYA150R S e m iconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSYA150D,
FSYA150R
1-800-4-HARRIS
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smd transistor NG
Abstract: No abstract text available
Text: FSYE13A0D, FSYE13A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e
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FSYE13A0D,
FSYE13A0R
1-800-4-HARRIS
smd transistor NG
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10N120BND
Abstract: 10n120bnd equivalent
Text: HGTG10N120BND Semiconductor J an u ary 1999 D ata S h eet 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best
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HGTG10N120BND
HGTG10N120BND
TA49290.
TA49189.
140ns
1-800-4-HARRIS
10N120BND
10n120bnd equivalent
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Untitled
Abstract: No abstract text available
Text: H M P 8 1 7 0 , H M P 8 1 7 1 , Data Sheet H M P 8 1 7 2 , May 1999 H M P 8 1 7 3 File Number 4284.5 NTSC/PAL Video Encoder Features The HMP8170, HMP8171, HMP8172, and HMP8173 NTSC and PAL encoders are designed for use in systems requiring the generation of high-quality NTSC and PAL video.
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HMP8170,
HMP8171,
HMP8172,
HMP8173
P0-P15
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a
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FSL923A0D,
FSL923A0R
-200V,
670J2
1-800-4-HARRIS
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EM- 534 motor
Abstract: No abstract text available
Text: HGTG18N120BN Semiconductor Data Sheet November 1998 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device
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HGTG18N120BN
HGTG18N120BN
1-800-4-HARR
EM- 534 motor
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Untitled
Abstract: No abstract text available
Text: FSYE430D, FSYE430R June 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor Communications Division has developed a series of Radiation Hardened MOSFETs specifically designed for
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FSYE430D,
FSYE430R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Semiconductor Data Sheet October 1998 Features 5A, 30 V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76105DK8
1-800-4-HARRIS
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hin213eca
Abstract: HIN202E HIN203E HIN205E HIN206E HIN235E HIN241E HIN238
Text: HIN202E thru HIN241E S em iconductor Data Sheet December 1998 File Number 4315.3 Features +/-15kV, ESD-Protected, +5V Powered, RS-232 Transmitters/Receivers • High Speed ISDN C o m p a tib le . 230kbits/s • ESD Protection for RS-232 I/OPins to ±15kV IEC1000
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HIN202E
HIN241E
/-15kVt
RS-232
HIN202E-HIN241E
RS-232E
1-800-4-HARRIS
hin213eca
HIN203E
HIN205E
HIN206E
HIN235E
HIN241E
HIN238
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Untitled
Abstract: No abstract text available
Text: DG408, DG409 Data Sheet Single 8-Channel/Differential 4-Channel, CMOS Analog Multiplexers The DG408 Single 8-Channel, and DG409 Differential 4-Channel monolithic CMOS analog multiplexers are drop-in replacements for the popular DG508A and DG509A series devices. They each include an array of eight analog
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DG408,
DG409
DG408
DG409
DG508A
DG509A
250ns)
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76105DK8
Abstract: No abstract text available
Text: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76105DK8
1-800-4-HARRIS
76105DK8
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52VA
Abstract: AN9824 HC55181 HC55180 HC55180CIM HC55182 HC55183 HC55184
Text: R M S HC55180, HC55181, HC55182, HC55183, HC55184 S e m iconductor October 1998 Data Sheet Extended Reach Ringing SLIC Family File Number Features The RSLIC18 family of ringing subscriber line interface circuits RSLIC supports analog Plain Old Telephone Service (POTS) in
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HC55180,
HC55181,
HC55182,
HC55183,
HC55184
RSLIC18
1-800-4-HARRIS
52VA
AN9824
HC55181
HC55180
HC55180CIM
HC55182
HC55183
HC55184
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r4543
Abstract: transistor smd Y2
Text: ACS11MS S em iconductor N o v e m b e r 1998 D a ta S h e e t Radiation Hardened Triple 3-Input AND Gate The Radiation Hardened A C S 11 MS is a Triple 3-input AND Gate. When all three inputs to one of the gates are at a HIGH level, the corresponding Y output will be HIGH. A LOW
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ACS11MS
1-800-4-HARRIS
r4543
transistor smd Y2
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20N120CND
Abstract: No abstract text available
Text: HGTG20N120CND Semiconductor D a ta s h e e t 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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HGTG20N120CND
HGTG20N120CND
TA49other
1-800-4-HARRIS
20N120CND
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Untitled
Abstract: No abstract text available
Text: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings
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JANSR2N7298
FRF450R4
1000K
1-800-4-HARRIS
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1 L 0380 R
Abstract: No abstract text available
Text: FSYA150D, FSYA150R Semiconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSYA150D,
FSYA150R
1-800-4-HARRIS
1 L 0380 R
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Untitled
Abstract: No abstract text available
Text: HI5766 Semiconductor October 1998 Data Sheet File Number 4130.4 10-Bit 60 MSPS A/D Converter Features The HI5766 is a monolithic, 10-bit, analog-to-digital converter fabricated in a CMOS process. It is designed for high speed applications where wide bandwidth and low
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HI5766
10-Bit
10MHz
260mW
250MHz
HI5766
10-bit,
1-800-4-HARRIS
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