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TURCK Inc WKC 5724-10M \|Turck WKC 5724-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	WKC 5724-10M	Bulk			1	1 $61.4 10 $61.4 100 $61.4 1000 $61.4 10000 $61.4	Buy Now
TURCK Inc PSW5M5724-10M \|Turck PSW5M5724-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PSW5M5724-10M	Bulk			1	1 $55.64 10 $55.64 100 $55.64 1000 $55.64 10000 $55.64	Buy Now
TURCK Inc PSG5M5724-10M \|Turck PSG5M5724-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PSG5M5724-10M	Bulk			1	1 $55.64 10 $55.64 100 $55.64 1000 $55.64 10000 $55.64	Buy Now
TURCK Inc RSC RKC 5724-10M \|Turck RSC RKC 5724-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RSC RKC 5724-10M	Bulk			1	1 $70.8 10 $70.8 100 $70.8 1000 $70.8 10000 $70.8	Buy Now
TURCK Inc PSG 5M WKT 5724-10M Nhb \|Turck PSG 5M WKT 5724-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PSG 5M WKT 5724-10M	Bulk			1	1 $71.6 10 $71.6 100 $71.6 1000 $71.6 10000 $71.6	Buy Now

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72410M Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: polyfet rf devices F2047 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended	OCR Scan	PDF	F2047 72410m 1110AvenidaAcaso, 72mDD1
Untitled Abstract: No abstract text available Text: polyfet rf devices F1520 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended lifetime. Low output capacitance	OCR Scan	PDF	F1520 \Q612V 1110AvenidaAcaso, 724100e
Untitled Abstract: No abstract text available Text: polyfet rf devices F2013 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended lifetime. Low output capacitance	OCR Scan	PDF	F2013 72410CH 0DD023S
Untitled Abstract: No abstract text available Text: polyfet rf devices F2247 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended	OCR Scan	PDF	F2247 1110AvenidaAcaso,
Untitled Abstract: No abstract text available Text: polyfet rf devices F1020 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended	OCR Scan	PDF	F1020 72410m D000135