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    724100T Search Results

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    Contextual Info: polyfet rf devices F1415 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended


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    F1415 724100T 00002QÃ 7241GCH PDF

    Contextual Info: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended


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    F1260 724100T PDF

    Contextual Info: polyfet rf devices F2002 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance


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    F2002 DV36-2V 1110Avenida PDF

    Contextual Info: polyfet rf devices F2046 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended


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    F2046 \GS12V 1110AvenidaAcaso, 724100e PDF