720 TRANSISTOR Search Results

Contextual Info: User's Guide SLUU669 – January 2012 QFN-Packaged bq24165/166/167EVM-720 Evaluation Modules The bq24165/166/167EVM-720 evaluation module is a complete charger module for evaluating a compact, flexible, high-efficiency, USB-friendly, switch-mode, charge-management solution for single-cell,

Mitsumi D353F3

Abstract: NM2200 D353F3 NM2200 C-A TX34D62VC1CA BTP-1931 721TX GE SCR Manual Automatic Battery Charger troubleshooting and repair lcd monitors lcd monitor troubleshooting and repair
Contextual Info: 720.book Page I Tuesday, November 23, 1999 2:29 AM Travel Mate 720 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.42C01.001 DOC. NO.: SG295-9803A PRINTED IN TAIWAN

a1717

Abstract: STK611-720-E
Contextual Info: Ordering number : EN*A1717 Thick-Film Hybrid IC STK611-720-E Fan 3-phase Inverter Motor Drive Inverter Hybrid IC Overview The STK611-720-E is an inverter power hybrid IC for use in 3-phase fan-motor applications and contains power stage, pre-driver, and protection circuits.

sot223 weight

Contextual Info: BF 720, BF 722 High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case

B 722 P

Abstract: f1306
Contextual Info: NPN Silicon High-Voltage Transistors BF 720; BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP Type M arking

MARKING 720

Abstract: P008B BF720 BF721
Contextual Info: BF720 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BF720 720 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS BF721

transistor J132

Abstract: 1090 MS2475 J132
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2475 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • DESIGNED FOR HIGH POWER PULSED IFF 720 WATTS (min.) IFF 1030 or 1090 MHz

ABE 721

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP

MARKING BF

Contextual Info: SIEM ENS PNP Silicon High-Voltage Transistors BF 721 BF723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN

c code for convolution

Abstract: powersi Kramer vhdl code for lte channel coding Kuznetsov PP1052 linear convolution advantages 77KB transistor a1m
Contextual Info: DesignCon 2006 Fast Time-Domain Simulation of 200+ Port S-Parameter Package Models Vadim Heyfitch, Altera Corporation vheyfitc@altera.com, 408 544-6914 (Vladimir Dmitriev-Zdorov, Mentor Graphics Corporation) (vladimir_dmitriev-zdorov@mentor.com, (720) 494-1196)

B 722 P

Abstract: BB 722 DC DC BB 722
Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP

BF marking code

Abstract: MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110
Contextual Info: NPN Silicon High-Voltage Transistors ● ● ● ● ● BF 720 BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP

IC 723

Abstract: 723 ic IC 1 723 uA 723 723DC mA 723 BF Marking pdf application of IC 723 Q62702-F1239 Q62702-F1309
Contextual Info: PNP Silicon High-Voltage Transistors ● ● ● ● ● BF 721 BF 723 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 720/722 NPN

Contextual Info: SIEMENS PNP Silicon High-Voltage Transistors BF 721 BF 723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN

j327

Abstract: j327 transistor AFT09S282 transistor j326 J161 mosfet transistor j334 AFT09S282NR3 ATC600F4R7BT250XT AFT09S282N
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

K4207

Abstract: 2SK4207 SC-65
Contextual Info: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

Contextual Info: 3SE D • 0231*320 G01b7b2 7 « S I P NPN Silicon High-Voltage Transistors BF 720; BF 722 _SIEMENS/ SPCL-, SEMICONDS T - 33- OS' Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

P 721 g f

Abstract: IC 723 H
Contextual Info: PNP Silicon High-Voltage Transistors BF 721; BF 723 Suitable for video output stages in TV sets and switching pow er supplies High breakdow n voltage Low collecto r -em itter saturation voltage Low capacitance C om plem entary types: BF 720/722 NPN T ype

K3799

Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)

Contextual Info: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

Contextual Info: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

Contextual Info: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)