716 TRANSISTOR Search Results

727 diode

Abstract: 716 transistor diode 716 BFY 34 transistor
Contextual Info: GaAs Components HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices 716

Contextual Info: CESIWID Cesiwid Inc. Globar Division P.O. Box 339 Niagara Falls, New York 14302 Telephone 716-278-2521 Fax 716-278-6270 Globar Bulk Ceramic Varistors Product Information Globar bulk ceramic varistors, also called VDR’s voltagedependent resistors , are non-linear resistors with large

Contextual Info: ACPM-5017 LTE Band12/17 698-716 MHz 3 x 3 mm Power Amplifier Module Data Sheet Description Features The ACPM-5017 is a fully matched 10-pin surface mount module developed for LTE Band12 and Band 17. This power amplifier module operates in the 697-716 MHz

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance

Contextual Info: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.

MRC252

Abstract: depletion mode BSD254 BSD254A BSD254AR
Contextual Info: Philips Semiconductors ^ 7 1 I 0 flgb 0 Db7 716 Ib b N-channel depletion mode vertical D-MOS transistors FEATURES • P H IN ^Productspecilication BSD254; BSD254A; BSD254AR ’ QUICK REFERENCE DATA • High-speed switching • No secondary breakdown. SYMBOL

Contextual Info: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 2 — 17 January 2014 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.

727 diode

Abstract: diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY
Contextual Info: G aAs Components Infineon •»ihnciogift* HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Component Types Package Types Title Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices

transistor j241

Abstract: j241 J241 transistor
Contextual Info: Document Number: A2T07H310-24S Rev. 0, 6/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to

PT 4863

Abstract: NICR-NI pt100 datasheet PT100 JUMO PT100 Kennlinie datasheet NICR-NI IP6502 thermoelement thermostat en 60730
Contextual Info: JUMO GmbH & Co. KG Hausadresse: Lieferadresse: Postadresse: Moltkestraße 13 - 31, 36039 Fulda, Germany Mackenrodtstraße 14, 36039 Fulda, Germany 36035 Fulda, Germany Telefon: 0661 6003-716 Telefax: 0661 6003-504 E-Mail: mail@jumo.net Internet: www.jumo.net

Contextual Info: PIC16C 712/716 M ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C712 Pin Diagrams • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP Microcontroller Core Features: • High-performance RISC CPU

ds33023

Abstract: 24cxx eeprom programmer circuits DS30277 PIC16C71 PIC16C710 PIC16C711 PIC16C712 PIC16C715 PIC16C716 PIC16C72A
Contextual Info: PIC16C712/716 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C712 Pin Diagrams • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP Microcontroller Core Features: 1 18 2 17 3 16 4 5 6 7 8 15

Contextual Info: PIC16C712/716 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C712 Pin Diagrams • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP Microcontroller Core Features: 1 18 2 17 3 16 4 5 6 7 8 15

Contextual Info: PIC16C712/716 Data Sheet 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM 2005 Microchip Technology Inc. DS41106B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

ds33023

Abstract: 16C716 PIC16C71 PIC16C710 PIC16C711 PIC16C712 PIC16C715 PIC16C716 PIC16C72A PIC16C7XX
Contextual Info: PIC16C712/716 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C712 Pin Diagrams • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP Microcontroller Core Features: 1 18 2 17 3 16 4 5 6 7 8 15

ACPM-5017-TR1

Abstract: AVAGO PA LTE ACPM5 ACPM5017 ACPM-5017
Contextual Info: ACPM-5017 LTE Band12/17 698-716 MHz 3 x 3 mm Power Amplifier Module Data Sheet Description Features The ACPM-5017 is a fully matched 10-pin surface mount module developed for LTE Band12 and Band 17. This power amplifier module operates in the 698-716MHz bandwidth.

the PIC Mid-Range Reference Manual DS33023

Abstract: PIC Mid-Range Reference Manual DS33023 the PIC Mid-Range Reference Manual DS33023 16 PIC18 example usart PIC16C73B-20
Contextual Info: PIC16C712/716 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP • High-performance RISC CPU • Only 35 single-word instructions to learn • All single-cycle instructions except for program

AVAGO PA LTE

Contextual Info: ACPM-5017 LTE Band12/17 698-716 MHz 3 x 3 mm Power Amplifier Module Data Sheet Description Features The ACPM-5017 is a fully matched 10-pin surface mount module developed for LTE Band12 and Band 17. This power amplifier module operates in the 698-716MHz bandwidth.

Carborundum

Abstract: 233BNR-32 carborundum varistor "silicon carbide" varistor glyptal varistor VDR 150 328BNR-40 231BNR-19 551BNR-26 551BNR-27
Contextual Info: CARBORUNDUM CO/ ELECTRIC 2bE D I n0fl.7h3 GD001I7 4 • CÀR8 T -//-2 5 o The Carborundum Company Electronic Ceramics Division RO. Box 664 Niagara Fails, NY 14302 Telephone: 716 278-2521 Carborundum Varistors Carborundum varistors, also called VDR’s voltagedependent resistors , are non-linear resistors with large

horizontal deflction output

Abstract: TDA8303A TDA8303 Video Sync Separator 1992
Contextual Info: Philips Sem iconductors i D D T tib T T 716 Prelim inary specification Small signal combination 1C for black/white TV ' N A P C / P H I L I P S SEMICOND TDA8303 TDA8303A b3E D — — The IF amplifier is followed by a passive synchronous . demodulator providing a regenerated carrier signal. This

SIDAC 200-400V

Abstract: gas ignition thyristor ignitors for HID lamp circuits
Contextual Info: l Se ec ag * es ED Z NI E9 G 39 CO 716 E R #E te L. U. k ac d P le Fi DO-15X Axial Lead DO-214 Surface Mount TO-92 Type 70 TO-202 Sidac 79 V to 330 V E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability