70 M 20 A EQUIVALENT Search Results

Contextual Info: S IE M E N S 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ”C operating temperature • Performance: -50 -60 -70 ÍRAC R A S access time 50 60 70 *CAC C A S access time 13 15 20

GMM791000BNS70

Abstract: GMM791000BNS-70 GMM791000 791000BNS-60
Contextual Info: GMM791000BNS-60/70/80 LG S e m ic o n C o .,L td . Description Features The G M M 791000B N S is an 1M x 9 bits D ynam ic R A M M odule w hich is assem bled 2 pieces o f 4M bit D R A M G M 71C 4400B J, 1M x 4 sealed in 20 pin S O J package and 1M bit D R A M (G M 71C 1000B J, I M x l) in 20 pm

GMM791000CNS

Abstract: CNS70
Contextual Info: GM M791000CN S-60/70/80 LG Semicon Co.,Ltd. Description The GM M 791000CNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM 71C4400CJ, 1M x4 sealed in 20 pin SOJ package and lM x l DRAM m 20 pin SOJ package. The GM M 791000CNS is a socket type memory

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70 ns 20 ns 130ns K M 4 1 C 4 0 0 1 A- 8 80 ns 20 ns 1 50 ns K M 4 1 C 4 0 0 1 A -1 0 100 ns 25 ns 1 80 ns K M 4 1 C 4 0 0 1 A- 7

Contextual Info: GMM7402000CS/SG-60/70/80 LG Semicon Co., Ltd. Description 2,097,152 WORDS x 40 BIT CMOS DYNAMIC RAM MODULE Features The GM M 7402000CS/SG is a 2M x 40 bits Dynamic RAM M ODULE which is assembled 20 pieces o f 1M x 4 bit DRAM s in 20/26 pin SOJ package on both side the

Contextual Info: GMM794000DS-60/70/80 LG Semicon Co.,Ltd. Features Description T he G M M 794000D S is a 4M x 9 bits Dynam ic R A M M odule w hich is assem bled 9 pieces o f 4M bit D R A M G M 71C 4100D J, 4 M x I in 20/26 pin sm all out-line J-form on a 30 pin single in-line

TCA 720

Contextual Info: G M M784000DS-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7 8 4 0 0 0 D S is a 4M x 8 bits I ynarm c R A M M odule w hich is assem bled 8 pieces o f 4M bit D R A M G M 71C 4100D J, 4 M x l) in 20/26 pin sm all out-line J-form on a 30 pin single in-line

MAS 10 RCD

Abstract: M74000
Contextual Info: GMM784000BS-60/70/80 LG Semicon Co.,Ltd. Description The GMM784000BS is a 4M x 8 bits Dynamic RAM Module which is assembled 8 picces of 4M bit DRAM GM71C4100BJ, 4 M x l in 20/26 pin small out-line J-form on a 30 pin single in-line package. The G M M 784000BS is a socket type memory

Contextual Info: GMM781000BS-60/70/80 LG Semicon Co.,Ltd. Description The G M M 781000B S is an 1M x 8 bits D ynam ic R A M M odule w hich is assem bled 8 pieces o f 1M bit D R A M G M 71C 1000B J, l M x l in 20/2 6 pm sm all out-line J-form on a 30 pin single in-line package. T hese are a

VU METER 32 led

Abstract: V51C256L-12 V51C256L-15 V51C256L-20 BA5Z
Contextual Info: V V IT E L IC V51C256L FAM ILY H IG H P ER FO R M A N C E LO W PO W ER 2 5 6 K x 1 B IT CMOS D Y N A M IC R A M V51C256L-12 V51C256L-15 V51C256L-20 M axim um Access Tim e ns M aximum Colum n A ddress Access Time (ns) 120 150 200 60 70 90 M aximum CMOS Standby Current (mA)

GMM794000BS60

Abstract: GMM794000BS70 GMM794000
Contextual Info: GMM794000BS-60/70/80 LG Semicon Co.,Ltd. Description Features The GM M 794000BS is a 4M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 4M bit DRAM GM71C4100BJ, 4 M x l in 20/26 pin small out-line J-form on a 30 pin single in-line package. The

Contextual Info: GMM7361000DS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 7 3 6 1OOODS/SG is a 1M x 36 bits D ynam ic R A M M O D IJLH w hich is assem bled 8 pieces o f 1M x 4bit D R A M s in 20/26 pm SO J

Contextual Info: GMM7361000CS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 36 BIT CMOS DYNAMIC RAM MODUI.H Description Features T he G M M 7361000C S /S G is a 1M x 36 bits D ynam ic R A M M O D U I.H w hich is assem bled 8 pieces o f 1M x 4bit D R A M s in 20/26 pin SOJ

Contextual Info: KM44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s

65162C

Abstract: 8403602JA 8403606JA
Contextual Info: HM-65162 fü HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M arch 1997 Features Description Fast Access Time. 70/90ns Max T h e H M -6 5 162 is a C M O S 20 48 x 8 S tatic Random A ccess M em o ry m an ufacture d using the H a rris A d va n ce d SAJI V

Contextual Info: GMM794000CS-60/70/80 LG Semicon Co.,Ltd. Description 4,19 4 ,3 0 4 W O R D S x 9 BIT CMOS DYNAMIC RAM MODULE Features The G M M 794000C S is a 4M x 9 bits D ynam ic R A M M odule w hich is assem bled 9 pieces o f 4M bit D RA M G M 71C 4100C J, 4 M x l in 20/26 pin sm all out-line J-form on a

Contextual Info: GMM781000DNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Features The G M M 78 1 0 0 0 D N S is an 1M x 8 bits D ynam ic R A M M odule w hich is assem bled 2 pieces o f 4 M bit D R A M G M 71C 4400D J, 1M x4 sealed in 20 pin SO J package.

fr 309

Abstract: TSB6326C
Contextual Info: TSB6326C APPLICATION : IF Filter for Video and Sound IF SYSTEM : 38.9 MHz : BG,I,DK VIDEO-CH SOUND-CH A m plitu de G ro u p D e lay Amplitu de and Group Delay Respon se Amplitu de Respon se 500 10 400 300 -10 -20 200 -20 -30 100 -40 -50 -100 -60 -200 -60 -70

TxDac 9760

Abstract: am333
Contextual Info: 12-Bit, 100 MSPS+ TxDAC D/A Converter AD9762* ANALOG DEVICES FEATURES M em ber of Pin-Com patible TxDAC Product Family 125 MSPS Update Rate 12-Bit Resolution Excellent Spurious Free Dynamic Range Performance SFDR to Nyquist @ 5 M Hz Output: 70 dBc Differential Current Outputs: 2 mA to 20 mA

Contextual Info: a FEATURES High Common-M ode Rejection DC: 100 dB typ 60 Hz: 100 dB typ 20 kHz: 70 dB typ 40 kHz: 62 dB typ Low Distortion: 0.001% typ Fast Slew Rate: 9.5 V/ ␮s typ Wide Bandw idth: 3 M Hz typ Low Cost Complements SSM 2142 Differential Line Driver APPLICATIONS

LZ-9H

Contextual Info: _ _ . . LG Semicon Co.,Ltd. GM M 7402000BS/SG-60/70/80 2 ,0 9 7 , 1 5 2 w o r d s x 40 b i t C M O S DYNAMIC R A M M O D U L E Description Features The G M M 7402000B S /S G is a 2M x 40 bits D ynam ic RAM M O D U LK w hich is assem bled 20 pieces o f 1M x 4 bit D R A M s in

271004

Abstract: M51C256H M51C256H-15 M51C256H-20
Contextual Info: P ftüO M D B O Â IS W in t e f M51C256H HIGH PERFO RM ANCE RIPPLEMODETm 256K CHM OS D YN A M IC RAM x 1 M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High R e lia b ility C e ra m ic— 16 Pin DIP

Contextual Info: GMM7361100BS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W ORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 7361100BS/SG is a 1M x 36 bits Dynamic RAM M ODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x 1bit DRAMs

Contextual Info: M O SEL V IT E U C V52C8126 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM 70 80 10 1 r a c 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAc) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ ) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)