NXP date code marking
Abstract: No abstract text available
Text: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits Low diode capacitance Low diode forward resistance
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BAP50LX
OD882D
sym006
BAP50LX
DFN1006D-2
NXP date code marking
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Untitled
Abstract: No abstract text available
Text: BB202LX Low-voltage variable capacitance diode Rev. 2 — 7 September 2011 Preliminary data sheet 1. Product profile 1.1 General description The BB202LX is a planar technology variable capacitance diode in a SOD882T ultra small leadless plastic SMD package.
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BB202LX
BB202LX
OD882T
TEA5764,
TEA5767
TEA5768
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Untitled
Abstract: No abstract text available
Text: BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package.
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BAS32L
OD80C
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SMD Diode V6 marking code
Abstract: BAS32l diode marking v6 NXP MARKING V4
Text: BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package.
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BAS32L
OD80C
SMD Diode V6 marking code
BAS32l
diode marking v6
NXP MARKING V4
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Untitled
Abstract: No abstract text available
Text: BAP70-03 Silicon PIN diode Rev. 6 — 7 March 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 SC-76 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for attenuators
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BAP70-03
OD323
SC-76)
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Untitled
Abstract: No abstract text available
Text: PESD24VS1UA Unidirectional ESD protection diode Rev. 1 — 7 March 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package designed to protect one signal line
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PESD24VS1UA
OD323
SC-76)
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sod323 diode marking code 2E
Abstract: SC-76
Text: PESD24VS1UA Unidirectional ESD protection diode Rev. 1 — 7 March 2011 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge ESD protection diode in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package designed to protect one signal line
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PESD24VS1UA
OD323
SC-76)
sod323 diode marking code 2E
SC-76
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marking v6 07 diode
Abstract: No abstract text available
Text: BAP64-03 Silicon PIN diode Rev. 7 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 very small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP64-03
OD323
sym006
marking v6 07 diode
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philips tcxo
Abstract: tcxo philips BB208-02 BB208-03 SC-76 PHILIPS variable capacitance diode top marking A2 smd diode sc-79 marking code a1
Text: BB208-02; BB208-03 Low voltage variable capacitance diode Rev. 01 — 7 April 2004 Product data sheet 1. Product profile 1.1 General description The BB208-02 is a planar technology variable capacitance diode in a SOD523 SC-79 ultra small SMD plastic package.
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BB208-02;
BB208-03
BB208-02
OD523
SC-79)
BB208-03
OD323
SC-76)
philips tcxo
tcxo philips
SC-76
PHILIPS variable capacitance diode top marking A2
smd diode sc-79 marking code a1
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features +0.1 1.27-0.1 Critical DC electrical parameters specified at 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
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KDB5690
O-263
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Untitled
Abstract: No abstract text available
Text: BAP70-02 Silicon PIN diode Rev. 7 — 16 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small SMD plastic package. 1.2 Features and benefits High voltage; current controlled RF resistor for attenuators
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BAP70-02
OD523
sym006
OD52laimers
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KCL1608
Abstract: No abstract text available
Text: 1608 Infrared Emitting Diode KCL1608 Description The KCL1608 is an Infrared Emitting Diode in miniature SMD package which is molded in a water clear plastic with flat top view lens. Features z z z Low forward voltage Package in 8mm tape on 7 inch diameter reel
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KCL1608
KCL1608
28-JAN-11
KSD-XXXXXX-000
21-JAN-11
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type N-Channel PowerTrenchTMMOSFET KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features @ VGS = 10 V 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS ON .
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KDB5690
O-263
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Untitled
Abstract: No abstract text available
Text: BAP70AM Silicon PIN diode array Rev. 4 — 7 March 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
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SHINDENGEN DIODE
Abstract: DE10S3L
Text: S U S x /W 7. , V 3 . y _i _ Sur f ace Mounting Device *# 8 1 Diode 7 Schottky Barrier Diode . OUTLINE DIMENSIONS DE10S3L 30 V 10A • SMD • T j 15 0 t ; • ftV f = 0 45V • PnRRM J ''K 3 > V X lS 6 Ü
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DE10S3L
SHINDENGEN DIODE
DE10S3L
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode OUTLINE D2FK60 Unit* mm Weight O.lötf Typ Package : 2F a y -K v -» / Cattaxlr mark 600V 1.5A Feature !> — M - •HJBEE • Small SMD • High Voltage • trr= 7 5 n s • trr-7 5 n s • <£V f=1.3V • Low Vf=1.3V
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D2FK60
J532-1)
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PDF
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20L60U
Abstract: No abstract text available
Text: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DF20L60U U nit: nun Package : STO-220 Weight lü g Typ 10.2 600V 20A Dale code ^ Control No Feature • SMD • SMD • Low Noise • trr-35ns • trr-3 5 n s m & Main Use • T .'f '7 y V i 7 ;®
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DF20L60U
STO-220
trr-35ns
20L60U
li501
J532-1)
20L60U
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PDF
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D1FS4A
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode mtm D1FS4A OUTLINE 40V 1.5A Feature • /JvSUSMD • Tj=150°C • f î V f = 0.45 V • P r r s m 7 7A ' 5 > ^ i SSE ' Small SMD 1Tj=150°C 1 Low Vf=0.45V 1 P rrsm Rating Main Use • 7 ,-f 'DC/DCZI y j K — 3> >mm. ^
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smd diode marking UJ
Abstract: smd marking KD smd marking diode KD smd diode marking code UJ SMD MARKING CODE vk D1FL40
Text: Super Fast Recovery Diode Single Diode mtmm o u tlin e Package I 1F D1 F L 40 Unit I mm Weight 0.058g Typ A 7 -K -7 -* 400V 0.8A Feature •e y -rx • Small SMD • Low Noise • trr=50ns • trr-5 0ns • /J^ S M D (D°— N — ”<& Main Use • • •
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D1FL40
trr-50ns
J532-1)
smd diode marking UJ
smd marking KD
smd marking diode KD
smd diode marking code UJ
SMD MARKING CODE vk
D1FL40
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620 tg diode
Abstract: diode smd marking FZ Diode smd code sg SGS-THOMSON SMD diode smd ed 49 smd diode marking sG SMD MARKING CODE sg diode MARKING CODE sg Diode smd code FZ 660 tg diode
Text: fZ T ^7# SGS-THOMSON ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION The ADB18PS combines a diode bridge and a
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ADB18PS
ADB18PS
620 tg diode
diode smd marking FZ
Diode smd code sg
SGS-THOMSON SMD
diode smd ed 49
smd diode marking sG
SMD MARKING CODE sg
diode MARKING CODE sg
Diode smd code FZ
660 tg diode
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diode 6t6
Abstract: SMD TRANSISTOR 12a P5 smd transistor STTA1206M diode smd 600V soft recovery smd diode 600v 1a smd transistor xf SMD a7 Transistor smd transistor A7 s 22
Text: f Z ^ 7 7 # S G S -T H O M S O N STTA _ 1206M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 12A V rrm 600V trr (typ) 28ns V f (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA TIONS: Freewheel or Booster Diode.
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STTA1206M
00b0G7fl
diode 6t6
SMD TRANSISTOR 12a
P5 smd transistor
STTA1206M
diode smd 600V soft recovery
smd diode 600v 1a
smd transistor xf
SMD a7 Transistor
smd transistor A7 s 22
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STTA2006M
Abstract: smd transistor p3
Text: f Z 7 SCS-THOMSON Ä 7#@¡*fô smi(g¥[MO S _ STTA2006M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av 20A V rrm 600V trr (typ) 30ns V f (max) 1.5 V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA TIONS: Freewheel or Booster Diode.
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STTA2006M
associat9001000
0Qb0113
STTA2006M
smd transistor p3
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smd diode marking F1
Abstract: CDSV3-19-G smd KT2 smd marking G
Text: C0A\CHir SMD Switching Diode S M D D io d e s S p e c ia lis t CDSV3-19-G/20-G/21-G High Speed RoHS Device % Features SO T -323 -F ast s w itching diode. 0 .0 8 7 2 . 2 0 0 .0 7 0 (1 .8 0 ) ' -S u rfa c e m ount package ideally fo r a u to m a tic insertion.
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CDSV3-19-G/20-G/21
OT-323
MIL-STD-750,
CDSV3-19-G
CDSV3-20-G
CDSV3-21
200mA
QW-B0025
CDSV3-19-G/20-G/21-G)
smd diode marking F1
smd KT2
smd marking G
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smd marking 5G
Abstract: DF40SC3L
Text: Schottky Barrier Diode Twin Diode mnm o u tlin e Package ! STO-220 DF40SC3L U n it I m m W e ig h t 1.5« T y p 0 7 h £ 9 (M ) 30V 40A Feature • SM D • <SVf= 0.45V • SMD • Low Vf=0.45V • P r r s m 7 ’K 3 > î / x ( S K î Polarity • P r rs m R a tin g
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DF40SC3L
STO-220
I-111,
J532-1)
smd marking 5G
DF40SC3L
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