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Black Box Corporation FMTP6-R2-50PAK Cat6 Modular Plug - Unshielded, Rj45, 8-Wire, 50-Pack Rohs Compliant: Yes \|Black Box FMTP6-R2-50PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	FMTP6-R2-50PAK	Pack			1	1 $45.25 10 $40.29 100 $35.33 1000 $35.33 10000 $35.33	Buy Now
NAC	FMTP6-R2-50PAK		67		1	1 $29.99 10 $29.99 100 $29.99 1000 $29.99 10000 $29.99	Buy Now

6R250P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
6R250P Abstract: IPW60R250CP JESD22 Text: IPW60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPW60R250CP PG-TO247 6R250P 6R250P IPW60R250CP JESD22
6R250P Abstract: 6R250 IPP60R250CP JESD22 Text: IPP60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPP60R250CP PG-TO220 6R250P 6R250P 6R250 IPP60R250CP JESD22
6R250P Abstract: 6R250 IPW60R250CP JESD22 Text: IPW60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPW60R250CP PG-TO247 6R250P 009-134-A O-247 PG-TO247-3 6R250P 6R250 IPW60R250CP JESD22
6R299P Abstract: 6R250P 6r299 6R250 IPA60R250CP 2500VA JESD22 PG-TO220-3-31 CoolMOS Power Transistor Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPA60R250CP PG-TO220 PG-TO220FP 6R250P 6R299P 6R299P 6R250P 6r299 6R250 IPA60R250CP 2500VA JESD22 PG-TO220-3-31 CoolMOS Power Transistor
6R250P Abstract: IPB60R250CP JESD22 PG-TO263-3-2 6R250 Text: IPB60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPB60R250CP P-TO263-3 P-TO263 6R250P 6R250P IPB60R250CP JESD22 PG-TO263-3-2 6R250
6R250P Abstract: 6R250 Text: IPP60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPP60R250CP PG-TO220 6R250P 6R250P 6R250
6r299 Abstract: 6R250P 6R299P Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPA60R250CP PG-TO220 PG-TO220FP 6R250P 6R299P 6r299 6R250P 6R299P
6R299P Abstract: No abstract text available Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPA60R250CP PG-TO220 PG-TO220FP 6R250P 6R299P 6R299P
6R250P Abstract: IPI60R250CP JESD22 Text: IPI60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPI60R250CP PG-TO262 6R250P 6R250P IPI60R250CP JESD22