6P POWER SWITCHING Search Results

P-Channel MOSFET code 1A

Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

Schottky Diode 20V 5A

Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

MSP SNCP

Contextual Info: TXC-06406 PHAST -6P ® Multi-Rate PHY/Framer for Data Networks KEY BENEFITS Industry-leading transport solution PHAST family of products Fully compliant with SONET/SDH standards Reduced software development effort Reduced space, power and cost Faster Time-To-Market

J112

Abstract: j113 J111
Contextual Info: Discrete POWER & Signal Technologies i I S E M iC D N P U C T Q R MMBFJ111 MMBFJ112 MMBFJ113 J ill J112 J113 G T O -9 2 S D Mark: 6P / 6 R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced

MB02

Abstract: Power One PMP 6p power switching
Contextual Info: Photoelectrics Retro-reflective, Polarized, Transistor Output Type PMP • Range: 6 m • Modulated, visible light, polarized • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

schematic diagram 180v dc motor speed controller

Contextual Info: Centrifugal Fans direct driven with scroll Issue 1.3 November 2012 2 The overall picture will decide Complete systems by Nicotra Gebhardt Depending on the model of the fan, the efficiency grade “N” set in accordance with the ErP Directive must be achieved from 2013 and

MCR03PZPZD7502

Abstract: MCR03PZPZD2202 mcr03pzpz GRM188B31A225K 2959M MCR03PZPZD6802 4.5V to 100V input regulator BD6590MUV
Contextual Info: BD6590MUV LED Drivers for LCD Backlights White Backlight LED Driver for Medium to Large LCD Panels Switching Regulator Type BD6590MUV No.11040EBT14 ●Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can

mcr03pzpz

Abstract: BD6150 D6590 BD6590MUV grm31cb31e106k GRM21BB31 VQFN024V4040 GRM219B31H334K MCR03PZPZD2202 4.5V to 100V input regulator
Contextual Info: LED Drivers for LCD Backlights White Backlight LED Driver for Medium to Large LCD Panels Switching Regulator Type No.10040EAT14 BD6590MUV ●Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can

MCR03PZPZD2202

Abstract: 2A132 4.5V to 100V input regulator
Contextual Info: LED Drivers for LCD Backlights White Backlight LED Driver for Medium to Large LCD Panels Switching Regulator Type BD6590MUV No.11040EBT14 ●Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can

889R-F3ACA-2

Abstract: 889nf3afc6f 871ZC-BW5N18-R3 889N-F3AFC-6F qd 803 889R BW10C
Contextual Info: Inductive Proximity Sensors Bulletin 871ZC Teflon-Coated Plastic Face/Threaded Copper Barrel Description Bulletin 871ZC inductive proximity sensors are self-contained, solid state switching devices designed to sense the presence of metal objects ferrous and nonferrous without touching them.

30V 20A power p MOSFET

Abstract: Transistor Mosfet N-Ch 30V SPC6602 SPC6602ST6RG
Contextual Info: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPC6604ST6RGB

Abstract: SPC6604 SPC6604ST6RG
Contextual Info: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

se 140

Abstract: power supply 48v 100a SE-600-27 SE-600-48 SE-600-24 180-264VAC 48v 100a SE-600-12 SE-600-15 SE-600-5
Contextual Info: 600W Single Output Switching Power Supply CASE: 926A 247x 127x 63.5 mm • AC input range selectable by switch • Protections: Short circuit / Overload / Over voltage / Over temp. • Built-in remote sense function • High power density 4.9 W/in 3 • Forced air cooling by built-in DC fan

Contextual Info: Interconnection Systems Selection Guide 8 2 7 5 0 Revised 6-95 AMP Dynamic D-3Q0Q Series Connectors Wire-to-Board or (Wire-to-Wire) Product Facts • Connector system designed for exclusive use with I/O and power circuits in the power and control boards of heavy electric

disconnector switch

Abstract: CSA22 iK07 25A3P EN 60947-3 2M252
Contextual Info: Complete switch disconnectors 25 to 100 A IP 40 as standard, IP 65 on request and IP66 on enclosure version with integral handle version Grey presentation > ENCLOSURES Characteristics p. 306 INTEGRAL PADLOCKABLE PRESENTATION Cat. No. 150 Safety switch to disconnect and isolate poles.

SPC6604

Abstract: SPC6604ST6RG N and P MOSFET
Contextual Info: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPC6601

Abstract: SPC6601ST6RG 6P marking TSOP 6 marking 52 N and P MOSFET
Contextual Info: SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPC6602ST6RG

Abstract: SPC6602 N and P MOSFET
Contextual Info: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

sf x033h

Abstract: X033H KA8532 C4228 KSC1623-Y 11GHz VCO R272 1n1001 SGM2016 ksc1623y
Contextual Info: Final version 99.4.30 1.1GHZ DUAL PLL KB8825 INTRODUCTION 16−TSSOP−0044 The KB8825 is a high performance dual frequency synthesizer with two integrated high frequency pre-scalers for RF operation up to 1.1 GHz. The KB8825 is composed of modulus pre-scalers providing 64 and

103B03

Abstract: 2 Pole 5 Position Rotary Switch miniature 2 Pole 5 Position Rotary Switch "10 positions" rotary switch 8 pole rotary switches 4 Pole Rotary Switch 304B04 "7 positions" rotary switch
Contextual Info: RBP12 Series 1-6 Pole Miniature Rotary Switches Features/Benefits • Rotary switch for low current • Shaft perpendicular to PCB • Index mechanism included in Typical Applications • Medical • Instrumentation • Appliances thickness of switch • Several actuation modes