016h
Abstract: KIA70 6H MARKING KIA7032AT marking 6H
Text: SEMICONDUCTOR KIA7032AT MARKING SPECIFICATION TSM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6H 1 2 Item Marking Description Device Mark 6H KIA7032AT * Lot No. 0A 2003. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KIA7032AT
016h
KIA70
6H MARKING
KIA7032AT
marking 6H
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verilog code for max1619
Abstract: pci card schematic
Text: 1 CONTENTS 0H CHAPTER 1 1H 2H 3H 4H 6H 7H 8H 9H 50H 1.2 KEY FEATURES . 5 51H 1.3 BLOCK DIAGRAM . 6
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179H177H
46H46H
47H47H
48H48H
si570
verilog code for max1619
pci card schematic
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6H MARKING
Abstract: KIA7032AF SOT89 MARKING 6h SOT89 transistor marking sot-89 marking 6H
Text: SEMICONDUCTOR KIA7032AF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 6H KIA7032AF * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KIA7032AF
OT-89
6H MARKING
KIA7032AF
SOT89 MARKING 6h
SOT89 transistor marking
sot-89
marking 6H
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BC817
Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H
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OT-23
BC817
BC818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC817
BC817 smd
bc818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
smd bc817
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H
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OT-23
BC817
BC818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
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BC817
Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E
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ISO/TS16949
OT-23
BC817
BC818
BC817-16
BC817-25
BC817-40
BC818-16
BC817
BC817 smd
BC817 cdil
bc818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
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ram repair
Abstract: PC4701 M6008 M60081L
Text: M306H2T-RPD-E Emulation Pod for M16C/6H Group M306H2 User's Manual Rev.1.00 September 1, 2003 REJ10J0259-0100Z * NQPACK, YAPACK, YQSOCKET, YQ-Guide, HQPACK, TQPACK, and TQSOCKET are trademarks of Tokyo Eletech Corporation. Keep safety first in your circuit designs!
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M306H2T-RPD-E
M16C/6H
M306H2
REJ10J0259-0100Z
M306H2T-RPD-E
ram repair
PC4701
M6008
M60081L
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W6NRD0X-0000
Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000
Text: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for
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W4PRE8F-0200
Abstract: W4TRD0R-0200 W4TRE0R-0200 W6NRD0X-0D00 W4NRE0X-0D00 silicon carbide cree Sic 1E16 W4TRF0R-0200 W4NRF0X-0D00
Text: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1
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transistor 6c9
Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A
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IPI50R350CP
696EH
transistor 6c9
transistor marking 6c9
102 6f
dk transistor
6H MARKING diode
D9 DG transistor
marking 6H
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Untitled
Abstract: No abstract text available
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK:GH;><IF:D;B:F>H/,+L.X U2AHF6ADK<6H:8=6F<: V !08M[^Rh .) O R =L"`_#%^Rh )',.) *2 _< Q X%dia U"LHF:B:9J 9HF6H:9 U%><=E:6@8IFF:CH86E67>A>HM
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IPI50R350CP
86E67
688DF9
696EH
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CEE17
Abstract: advantages of earth leakage circuit breaker EN60309 6F22 Ct516 80x7 earth leakage circuit IEC 60309 industrial plug dimensions
Text: CEE-industrial plugs and sockets CEE-Industriesteckvorrichtungen 188 - 199 Socket combinations ESTK Steckdosenkombinationen ESTK 200 - 202 Disconnectible wall mounting sockets Abschaltbare Wandsteckdosen 203 - 205 Dimensions 206 - 216 CEE-Industriesteckvorrichtungen
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ESTKS/21,
ESTKA/21,
ESTKFA/21,
ESTKS/201,
ESTKA/201,
ESTKFA/201,
ESTKFA/11-0,
ESTKS/11,
ESTKA/02,
ESTKA/011
CEE17
advantages of earth leakage circuit breaker
EN60309
6F22
Ct516
80x7
earth leakage circuit
IEC 60309 industrial plug dimensions
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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LC-CA1215P
Abstract: No abstract text available
Text: Individual Data Sheets For main power supplies. Cycle long life type. LC-CA1215P Dimensions mm Terminal type (option) 6.35 4 .5 3.2 6.35 4.75 (187) (250) Contents indicated (including the recycle marking, etc.) are subject to change without notice. Battery case resin: standard (UL94HB)
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LC-CA1215P
UL94HB)
151mm
100mm
LC-CA1215P
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BC817
Abstract: BC818 BC817-25 marking 6D BC817-16 BC817-40 BC818-16 BC818-25 BC818-40
Text: L BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 2.6
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BC817
BC818
BC817
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
BC818
BC817-25
marking 6D
BC817-16
BC817-40
BC818-16
BC818-25
BC818-40
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Untitled
Abstract: No abstract text available
Text: BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 - 6C BC818 = 6H BC818-16 = 6E BC818-25 - 6F BC818-40 - 6G PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm 3.0 2.8 0.4S C J °-38 r i —I
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BC817
BC818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
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Untitled
Abstract: No abstract text available
Text: 2SK2718 TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 0 Í0 .3 : R d S ( 0N) = 5-6H (Typ.)
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2SK2718
100//A
20kil)
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BC817
Abstract: bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Text: 23Ö33TM □□□□73 4 T07 • BC817 BC818 DÎL SILICON PLANAR EPITAXIAL TRANSISTORS N-P—N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m
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BC817
BC818
BC817
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
bc818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
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Untitled
Abstract: No abstract text available
Text: LI NE AR T E C H N O L O G Y CORP 43E 5Slfl4bfl 00 05 51 7 J> LTC1059M/883 LinCAB. TECHNOLOGY □ HILTC -6H-OS High Performance Switched C apacitor Universal Filter DESCRIPTION ABSOLUTE MAXIMUM RATINGS The LTC1059M/883 consists of a general purpose, high
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LTC1059M/883
LTC1059M/883
40kHz
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: 23633^ o d o ü 7 3 h *ì g 7 • BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m
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BC817
BC818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
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sot 363 marking J IX
Abstract: RF1890 J Fet marking 2 AW LAM-91563 AM-91563 mmic marking 87
Text: W O ñ HEW LETT W LCM P A C K A R D 0 .8-6 GHz 3VDownconverter TfechnicalData IAM-91563 Features • +0 dBm Input IP* at 1.9 6H z • Single +3V Supply • 8.5 dB SSB Noise Figure at 1.9 GHz • 9.0 dB Conversion Gain at 1.9 GHz • Ultra-miniature Package
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IAM-91563
OT-363
IAM-91563
OT-363
OT-143
5964-9489EUS
59654330E
10J013
0X101
sot 363 marking J IX
RF1890
J Fet marking 2 AW
LAM-91563
AM-91563
mmic marking 87
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Untitled
Abstract: No abstract text available
Text: \ 12 | 11 | | 10 | 9 8 | | 7 6 | J DIM ‘ C REF. DIM 'C' DIM -C - 7.40 DIM 'C' - .291 M ?— 8 — 8 — 8 — 8 — | <ppp xaioui xxxx-6H s2~l F 8 — 8 — 8 — 8 — 8 — 8 — CIRCUIT A1 IDENTIFIER INVERTED APPLICATION 8 -^ •MARKING SEE NOTE 13 E
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ERA-3SM 03
Abstract: ERA-3SM 03 02
Text: M A m plifiers onolithic B ro a d ba n d to 8 dc ghz « ERA all specifications at 25°C low power, up to +13.5 dBm output MAXIMUM DYNAMIC POWER cffim RANGE at 2 GHz* a t 2 GHz* GAiN, dB Typical o FREQ. 6H z M ODEL# NO. I- I. 0.1 w r OVMfrequwcy, GH2 1 2
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RA-21SM
NEWERA-33SM
ERA-3SM 03
ERA-3SM 03 02
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335-X105-XXX
Abstract: No abstract text available
Text: ± DRW ZONE REV ALL - A •MINIMUM PIN W I P E 3 = 1.00 4 = 2.00 5 = 3.00 B LENGTH. SEE D E T A IL U mm W IPE mm W I PE mm W IPE SCR NUMBER DESCRIPTION BY D S M H -72 6H W R.VER01 MCHU-76HMLS.VER02 NEW RELEASE KEEP OUT ZONES ADDED HCL-SD HCL-AP ADDED NEW P A R T NUMBERS FOR NEW P L A T I N G CODES
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VER01
MCHU-76HMLS
VER02
335-X105-XXX
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