6C-5 28 TRANSISTOR Search Results

2N43a

Abstract: 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 1999. INCH-POUND MIL-PRF-19500/6C 1 March 1999 SUPERSEDING MIL-S-19500/6B 28 December 1971 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,

transistor f613

Abstract: transistor bc 567
Contextual Info: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.

ZX6T9M522

Abstract: SOT23 MARK PD sot236 651 DUAL NPN SOT23-6
Contextual Info: Advanced Products Generation 6 Dual Die Transistors in SOT23-6 Part Polarity VCEO IC PD hFE V A W Min VCE sat Max mV at IC at IC A RCE(sat) at IB mA Part Mark m ZX6TDNE6 2x NPN 9 4.5 1.1 500 0.2 45 1 100 22 6NN ZX6TD9E6 2x PNP -9 -4.5 1.1 500 -0.01 -45 -1

Contextual Info: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

SOt323 marking code 6X

Abstract: MUN5111T1 MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G
Contextual Info: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

marking 6C

Abstract: SMUN
Contextual Info: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Transistor hFE CLASSIFICATION Marking CE

Abstract: BC807 BC817 BC817-16 BC817-25 BC817-40
Contextual Info: SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D 3 H G A 2 1 MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage

2N6439

Abstract: UT25 coaxial VK200 ferrite choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

MUN5111T1

Abstract: MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G SOt323 marking code 6X
Contextual Info: MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias

BC807

Abstract: BC817 BC817-16 BC817-25 BC817-40
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC817 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BC807. DIM A B C D E G H J K L M N P MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

BC817

Abstract: BC807 BC817-16 BC817-25 BC817-40 marking 6c sot-23
Contextual Info: Pb BC817-16 BC817-25 BC817-40 RoHS COMPLIANCE 0.3 Watts NPN Plastic-Encapsulate Transistors SOT-23 Features — — — — — Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available BC807

BC817

Abstract: BC807 BC817-16 BC817-25 BC817-40
Contextual Info: Pb BC817-16 BC817-25 BC817-40 RoHS COMPLIANCE 0.3 Watts NPN Plastic-Encapsulate Transistors SOT-23 Features — — — — — Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available BC807

BUT23

Contextual Info: { Z I SG STUO M SO N S^5 i IL [ieîi® iD © i BUT232V NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

KTC4021

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4021 EPITAXIAL PLANAR NPN TRANSISTOR TV TUNER, UHF OSCILLATOR APPLICATION. COMMON BASE TV TUNER, UHF CONVERTER APPLICATION.(COMMON BASE) FEATURES • High Transition Frequency : fT=1500MHz (Typ.). • Excellent I lfe Linearity.

BUZ73

Abstract: K 3911 transistor "" transistor T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

transistor d2624

Abstract: transistor D 2624 mos transistor d2624 s036a DDT relay LN2004A IC ULN2003A application
Contextual Info: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS S L D S 0 3 6 A - D2624, DECEMBER 1976 - REVISED APR IL 1993 H IG H -V O LT A G E H IG H -C U R R E N T D A R L IN G T O N T R A N S IS T O R A R R A Y S 500-mA Rated Collector Current Single Output d o r n package

78M0

Abstract: stmicroelectronics diode sj transistor 6619 A982 l74m05 l78m
Contextual Info: L78M00 SERIES POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive

EP5S

Contextual Info: User's Manual User's Manual: Hardware M16C/6C Group 16 User’s Manual: Hardware RENESAS MCU M16C Family / M16C/60 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics

"application notes" ULN2803a

Contextual Info: ULN2803A DARLINGTON TRANSISTOR ARRAY SLRS049B − FEBRUARY1997 − REVISED OCTOBER 2003 D 500-mA Rated Collector Current Single D D D D D DW PACKAGE (TOP VIEW Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of

2SA1898

Abstract: MARKING AN
Contextual Info: Ordering number:EN 5049 _ 2SA1898 No.5049 PNP Epitaxial Planar Silicon Transistor DC/DC Converter A p p licatio n s • High-speed switching. F e a tu re s • Adoption of FBET and MBIT processes. • Large current capacity. •Low collector-to-emitter saturation voltage.

Contextual Info: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

6C TRANSISTOR MARKING

Abstract: BC817-25-AE3-R BC817 BC817-16 BC817-16-AE3-R BC817-25 BC817-40-AE3-R pin configuration NPN transistor BC817 sot-23 BC817L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC817 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 Description The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. 1 2 SOT-23 *Pb-free plating product number:BC817L