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    6B TRANSISTOR Search Results

    6B TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6B TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 6B

    Abstract: 6B transistor thermocouple to frequency AN-541
    Text: a AN-541 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com Proper System Grounding Techniques for 6B Series Systems INTRODUCTION The 6B series of digital signal conditioning modules,


    Original     		PDF AN-541 RS-485 RS-232C transistor 6B 6B transistor thermocouple to frequency AN-541

    Untitled

    Abstract: No abstract text available
    Text: ◆Externally Applied Reference Voltage Vref ◆Ceramic Capacitors Compatible ◆Input Voltage Range: 0.9V~10.0V ◆Oscillation Frequency: 300kHz, 100kHz (±15%) ◆PWM Control (XC9106) PWM/PFM Automatic Switching Control (XC9107) ◆SOT-25 / USP-6B Packages


    Original     		PDF 300kHz, 100kHz XC9106) XC9107) OT-25 XC9106 100kHz. XC9106/07

    Marking 6B

    Abstract: marking 6c sot-23 Bc817 sot-23
    Text: BC817 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC817-25 6B BC817-40 6C SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS


    Original     		PDF BC817 BC817-25 BC817-40 OT-23 BC807 OT-23 Marking 6B marking 6c sot-23 Bc817 sot-23

    Untitled

    Abstract: No abstract text available
    Text: ◆Externally Applied Reference Voltage Vref ◆Ceramic Capacitors Compatible ◆Input Voltage Range: 0.9V~10.0V ◆Oscillation Frequency: 300kHz, 100kHz (±15%) ◆PWM Control (XC9106) PWM/PFM Automatic Switching Control (XC9107) ◆SOT-25 / USP-6B Packages


    Original     		PDF 300kHz, 100kHz XC9106) XC9107) OT-25 XC9106 100kHz. XC9106/07

    transistor 6B

    Abstract: transistor 6b marking KIA7021AF 6B marking transistor 6b transistor
    Text: SEMICONDUCTOR KIA7021AF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 6B KIA7021AF * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only


    Original     		PDF KIA7021AF OT-89 transistor 6B transistor 6b marking KIA7021AF 6B marking transistor 6b transistor

    BC817-25

    Abstract: BC807-25 BC817-40 P1008
    Text: BC817-25 BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC817-25 6B BC817-40 6C SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES ARE


    Original     		PDF BC817-25 BC817-40 OT-23 BC807-25 BC817-40 OT-23 BC817-25 P1008

    2N43a

    Abstract: 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 1999. INCH-POUND MIL-PRF-19500/6C 1 March 1999 SUPERSEDING MIL-S-19500/6B 28 December 1971 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,


    Original     		PDF MIL-PRF-19500/6C MIL-S-19500/6B 2N43AZ1, 2N43AZ2, 2N44AZ1 2N44AZ2 MIL-PRF-19500. 2N43a 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan

    BC817 cdil

    Abstract: BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 cdil BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16

    BC817

    Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817

    BC817

    Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E


    Original     		PDF ISO/TS16949 OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC817 BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40

    BC817 A6

    Abstract: transistor 6c o25c BC817-40-6C BC817-16 BC817-25 BC817-40 A66B
    Text: BC817-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SOT-23 SIGANL TRANSISTORS 3 1 2 Marking A6/6B/6C o ABSOLUTE MAXIMUM RATINGS Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V CBO 5.0


    Original     		PDF BC817-16/-25/40 OT-23 Group-16 BC817 A6 transistor 6c o25c BC817-40-6C BC817-16 BC817-25 BC817-40 A66B

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25

    marking 6C

    Abstract: BC817-25 BC807-25 BC817-40
    Text: BC817-25 BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC817-25 6B BC817-40 6C SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES ARE


    Original     		PDF BC817-25 BC817-40 OT-23 BC807-25 BC817-40 OT-23 marking 6C BC817-25

    marking 6C

    Abstract: BC817-25 BC817-40 BC817 BC807-25 Bc817 sot-23
    Text: BC817-25 BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC817-25 6B BC817-40 6C SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES ARE


    Original     		PDF BC817-25 BC817-40 OT-23 BC807-25 BC817-40 OT-23 marking 6C BC817-25 BC817 Bc817 sot-23

    erg inc 5 pin inverter

    Abstract: No abstract text available
    Text: MOTOROLA 0rderthjsdocument SEMICONDUCTOR TECHNICAL DATA by MHPM6B5A120D/D Hybrid Pow er M odule M H PM 6B 5A 120D M H P M 6B 1O A 120D M H PM 6B 15A 120D Integrated Power Stage for 460 VAC Motor Drives Motorola Preferred Devices These VersaPower modules integrate a 3 -p h a se inverter in a


    OCR Scan     		PDF MHPM6B5A120D/D erg inc 5 pin inverter

    HPM motor

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M HPM 6B10N 120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H PM 6B 10N 120 M H PM 6B 15N 120 M H PM 6B 25N 120 SERIES Integrated Power Stage for 460 VAC Motor Drives These E-POWER modules integrate a 3 -p h a se inverter in a


    OCR Scan     		PDF 6B10N 120/D HPM motor

    2ND55

    Abstract: 2N828 2n4933 *423 pnp 2N2482 2n711 2N3733 2N3866 2N401 MT72j
    Text: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - Of NPN type « Rated Breakdown VottaiM V V V CB CB EB VCE 65 6b :^N3e32] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866 f ?N3S24


    OCR Scan     		PDF 2H3375 S2N35 2N3733 2N3866 JN3924 2N392B 2N401Ã T0-60 JN4040 2N4041 2ND55 2N828 2n4933 *423 pnp 2N2482 2n711 2N401 MT72j

    Untitled

    Abstract: No abstract text available
    Text: J UJ nitron sem iconductors Semitronics Corp. S 2 m www.DataSheet.in silicon transistors UHF/VHF power transistors 7~~3 7 ~ 0 / NPN type « Rttad Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28


    OCR Scan     		PDF 2N3733 2N3866 N3S24 2N3926 2N3927 T0-60 MT-72j

    2N510B

    Abstract: 1HW NPN 2NS71 2N3927 2NB642
    Text: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - O f NPN type « Rated Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866


    OCR Scan     		PDF 1311IETUI1 2N3733 2N3866 N3S24 2N3926 2N3927 2N962 2N985 2N2190 2N510B 1HW NPN 2NS71 2N3927 2NB642

    10A60D

    Abstract: 20A60 10A60 6B10A60D single phase igbt based inverter 200 amps circuit
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H PM 6B 10A60D M H PM 6B 20A 60D Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Devices These VersaPower modules integrate a 3-phase inverter in a single convenient package. They are designed for 1.0 and 2.0 hp


    OCR Scan     		PDF 10A60D 6B10A60D 6B20A60D 20A60 10A60 single phase igbt based inverter 200 amps circuit

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHPM6B5A120D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet M H PM 6B5A 120D M H PM 6B 10A 120D M H PM 6B 15A 120D Hybrid Pow er M odule Integrated Power Stage for 460 VAC Motor Drives Motorola Preferred Devices These modules integrate a 3-phase inverter in a single convenient package.


    OCR Scan     		PDF MHPM6B5A120D/D MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H P M 6 B 1 ON 1 2 0 M H PM 6B 15N 120 MH PM 6B 25N 120 Integrated Power Stage for 460 VAC Motor Drives These E-POWER modules integrate a 3-phase inverter in a single convenient package. They are designed for 2.0,3.0, and 5.0


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DTD123YK/DTD123YS/DTD123YF DTD123YL/DTD123YA/DTD123YV h 7 > y ^ ^ / T ransistors DTD123YK/DTD123YS/DTD123YF DTD123YL/DTD123YA/DTD123YV 7 ^-/Transistor Switch Digital Transistors Includes Resistors F X • ^JfJ’+ iim /'D im ension s (Unit : mm) 6b, A 4 U? Y >


    OCR Scan     		PDF DTD123YK/DTD123YS/DTD123YF DTD123YL/DTD123YA/DTD123YV 100MHz

    bc817

    Abstract: No abstract text available
    Text: BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 Û.09 0.48 0738


    OCR Scan     		PDF BC817 BC818 BC817 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40