6A FAST DIODE Search Results

Contextual Info: MP8606 6A, 6.5V, Fast-Transient, Synchronous Step-Down Converter DESCRIPTION FEATURES The MP8606 is a fully-integrated, highfrequency, synchronous, rectified step-down switch-mode converter. It offers a very compact solution to achieve 6A of continuous output

FE6H

Abstract: smd diode 6F FE6G
Contextual Info: FE 6A .FE 6H Super Fast Silicon Rectifler Superschnelle Silizium Gleichrichter Nominal current Nennstrom 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 400 V Plastic case Kunststoffgehäuse 0 8 x 7.5 [mm] Weight approx. Gewicht ca.

YG123S15

Contextual Info: YG123S15 6A (1500V / 6A ) Outline drawings, mm Fast recovery diode TO-220F _ 0.5 10 + _ 0.2 2.7 + 6.3 _ 0.2 2.7 + Type name Polarity mark 4.5 +_ 0.2 O 3.2 +0.2 - 0.1 _ 0.2 3.7 + [][] 1.0MAX. YG123 [ ] [ ] Lot. No. _ 0.2 1.2 + Pre-Solder Features Damper diode for high definition TV and high resolution display

Contextual Info: MP3426 6A, 35V Boost Converter with Programmable Switching Frequency and UVLO DESCRIPTION FEATURES The MP3426 is a current-mode step-up converter with a 6A, 90mΩ internal switch that provides a highly efficient regulator with a fast response. The MP3426 features

YG123S15

Contextual Info: YG123S15 6A (1500V / 6A ) Outline drawings, mm Fast recovery diode TO-220F _ 0.5 10 + _ 0.2 2.7 + 6.3 _ 0.2 2.7 + Type name Polarity mark 4.5 +_ 0.2 O 3.2 +0.2 - 0.1 _ 0.2 3.7 + [][] 1.0MAX. YG123 [ ] [ ] Lot. No. _ 0.2 1.2 + Pre-Solder Features Damper diode for high definition TV and high resolution display

YG123S15

Abstract: YG123
Contextual Info: YG123S15 6A (1500V / 6A ) Outline drawings, mm Fast recovery diode TO-220F _ 0.5 10 + _ 0.2 2.7 + 6.3 _ 0.2 2.7 + Type name Polarity mark 4.5 +_ 0.2 O 3.2 +0.2 - 0.1 YG123 [ ] [ ] 1.0MAX. Lot. No. _ 0.2 3.7 + [][] _ 0.2 1.2 + Pre-Solder Features Damper diode for high definition TV and high resolution display

solitron rectifier

Abstract: NS6002 NS6000 NS12006 NS6001 NS30001
Contextual Info: rectifiers 21 FAST SWITCHING Medium Power Fast Recovery Double-Diffused Silicon Rectifier Diodes (6A Series) CASE STYLE J Jedec Type Solitron Part Numbers PIV Jedec Type 1N3879 NS6000 50 1N3909 NS30000 50 1N3880 NS6001 100 1N3910 NS30001 100 1N3881 NS6002

Contextual Info: RCD060N25 Datasheet Nch 250V 6A Power MOSFET lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: R6006ANX Datasheet Nch 600V 6A Power MOSFET lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

SIDC03D60F

Contextual Info: Preliminary SIDC03D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D60F 600V ICn 6A A This chip is used for:

ic MARKING QG

Abstract: GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE
Contextual Info: STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD6NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)

Contextual Info: R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R6006ANX

Contextual Info: R6006ANX R6006ANX Datasheet Nch 600V 6A Power MOSFET lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: RCD060N25 Nch 250V 6A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

STU6NA100

Contextual Info: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED

U6NA100

Abstract: STU6NA100
Contextual Info: STU6NA100  N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED

Contextual Info: R6006AND Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: PDU620CT 6A DUAL ULTRA-FAST RECOVERY RECTIFIER PowerDI ä5 Features Mechanical Data • · · · · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency High Maximum Junction Temperature High Forward Surge Current Capability

IDP06E060

Abstract: IDD06E060 IDB06E060
Contextual Info: IDD06E060 Target IDB06E060 IDP06E060 Fast Switching EmCon Diode A • 600V EmCon technology • fast recovery • soft switching • low reverse recovery charge • low forward voltage ® C C C C A TO 252 Type VRRM IF VF Tj IDD06E060 600V 6A 1.8 V 150°C

BYW71

Contextual Info: BYT71-800 FAST RECOVERY RECTIFIER DIODES Table 1: Main Product Characteristics IF AV 6A VRRM 800 V Tj 150°C VF (max) 1.4 V trr (max) A K 300 ns TO-220AC FEATURES AND BENEFITS • ■ Table 2: Order Code High voltage capability Fast and soft recovery Part Number

6VF60CT

Abstract: 6VF60CTF TLS153
Contextual Info: FAST RECOVERY DIODE 6VF60CT 6VF60CTF 6 .6A/eoov/trr :35nsec 2.38M AX .094 6-7(.264) FEATURES 2.38M AX (.094) n O TO-251AA Case 7 ° TO-252AA Case, Surface M ount Device 6.220245) 5.98(,235) PU— J ° U ltra-Fast Recovery ° Dual Diodes - C athode Com m on

Contextual Info: STU 6N A100 N - CHANNEL 1000V - 1 .45Q - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S T U 6 N A 1 00 V dss 1000 V RDS on < 1.7 Q. Id 6A • TYPICAL R D S (on) = 1 .45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

IC-25

Contextual Info: Æ utran PRODUCT DEVICES.INC. CATALO' ULTRA FAST RECOVERY RECTIFIERS 500V, 6A, 35ns MAXIMUM RATINGS PER DIODE PARAMETER SYMBOL UNITS WORKING PEAK VRRM REVERSE VOLTAGE AVERAGE FORWARD CURRENT IF AV PEAK ONE CYCLE NON-REPETITIVE. SURGE CURRRENT IFSM PEAK REPETITIVE