Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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6N65K-MT
6N65K-MT
QW-R502-A95
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VCH20
Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
IXFH14N100Q
IXTU01N100
IX6R11S3
IX6R11S6
IX6R11S3
IX6R11S6
VCH20
IX6R11P7
ixdd414
IXFK21N100F
18PIN
18-PIN
ixys mosfet
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IX6R11P7
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sigTU01N100
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
IX6R11P7
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IX6R11S3
Abstract: IX6R11P7
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sigTU01N100
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
IX6R11P7
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U4008
Abstract: IX6R11P7 IX6R11S3 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S6
Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
IXTU01N100
IX6R11S3
IX6R11S6
IX6R11S3
IX6R11S6
U4008
IX6R11P7
IXFK21N100F
18PIN
18-PIN
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IX6R11S6
Abstract: ix6r11s3
Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
Edisonstrasse15
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Untitled
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sXFH14N100Q
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
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PDF
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Untitled
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sigFH14N100Q
IXTU01N100
IX6R11S6
IX6R11S3
IX6R11S3
IX6R11S6
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PDF
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Untitled
Abstract: No abstract text available
Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers
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IX6R11
IX6R11
sig500
IX6R11S3
IX6R11S6
Edisonstrasse15
D-68623;
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6A 650V MOSFET
Abstract: mosfet 650v
Text: TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 650 1.2 @ VGS =10V ID (A) 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
O-220
ITO-220
TSM7N65
6A 650V MOSFET
mosfet 650v
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A09 MOSFET
Abstract: TSM7N65 ITO-220 6A 650V MOSFET 32nC
Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
ITO-220
O-220
TSM7N65
32nerty
A09 MOSFET
ITO-220
6A 650V MOSFET
32nC
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TO 220 Package High current N CHANNEL MOSFET
Abstract: TSM7N65 MOSFET 50V 100A TO-220 ENHANCEMENT MOSFET pin diagram of MOSFET "MARKING DIAGRAM" 25V 1A power MOSFET TO-220 circuit diagram of mosfet based power supply N-CHANNEL ENHANCEMENT MODE POWER MOSFET n-channel mosfet transistor
Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
ITO-220
O-220
TSM7N65
TO 220 Package High current N CHANNEL MOSFET
MOSFET 50V 100A TO-220
ENHANCEMENT MOSFET
pin diagram of MOSFET
"MARKING DIAGRAM"
25V 1A power MOSFET TO-220
circuit diagram of mosfet based power supply
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
n-channel mosfet transistor
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6A 650V MOSFET
Abstract: MOSFET 50V 100A TO-220 TSM7N65
Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N65
ITO-220
O-220
TSM7N65
6A 650V MOSFET
MOSFET 50V 100A TO-220
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TSM7N65A
Abstract: No abstract text available
Text: TSM7N65A 650V N-Channel Power MOSFET ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 650 V RDS on (max) 1.45 Ω Qg 27.8 nC Block Diagram Features ● Low RDS(ON) 1.2Ω (Typ.) ● ● ● Low gate charge typical @ 27.8nC (Typ.)
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TSM7N65A
ITO-220
50pcs
TSM7N65ACI
TSM7N65A
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24v 2a smps
Abstract: smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R
Text: C O M M U N I C A T I O N S P O W E R Taking Charge Batteries, Chargers and Chemistry Evolution in Communications by Tara Lynn Macdonald W HILE THERE ARE MANY alternative rechargeable systems, lead-acid batteries are still the primary choice. Compared with alternative solutions,
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95Vac
264Vac
1500-AEQ
144Vdc/10A.
138Vdc
60-cell,
24v 2a smps
smps 5kw
KA5M02659RN
KA5M0380R
KA1M0680RB
KA5L0365R
Saft, battery Ni-Cd
FDH44N50
5kw boost igbt converter
KA1M0565R
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SSE12N65SL
Abstract: MosFET
Text: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSE12N65SL
O-220P
SSE12N65SL
07-Nov-2013
MosFET
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SSRF12N65SL
Abstract: MosFET 6A 650V MOSFET
Text: SSRF12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 DESCRIPTION The SSRF12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSRF12N65SL
ITO-220
SSRF12N65SL
07-Nov-2013
MosFET
6A 650V MOSFET
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Mosfet
Abstract: SSF11NS65U
Text: SSF11NS65U 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.32Ω (typ.) ID 11A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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SSF11NS65U
O-220
SSF11NS65U
Mosfet
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Untitled
Abstract: No abstract text available
Text: SSD12P10 2A , 650V , RDS ON 8Ω P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
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SSD12P10
O-252
SSD12P10
12P10
O-252
300us,
06-Jun-2012
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NL2024
Abstract: lithium 10.8v LG chem FS6S1565RB saphion n charge KA5Q0765R P1625 FS7M0880 GP Batteries KA1M0880B
Text: P O W E R F O R P O R TA B L E E L E C T R O N I C S Rechargeable Batteries Keeping Up with Current Demand By Jeff Shepard W IRELESS MOBILITY is one of the major forces driving demand for, and demands on, rechargeable batteries. The latest devices in the mobile world
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710Wh/kg
300Wh/l,
NL2024
lithium 10.8v
LG chem
FS6S1565RB
saphion n charge
KA5Q0765R
P1625
FS7M0880
GP Batteries
KA1M0880B
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7N60
Abstract: e-bike CYStech Electronics
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN7N60FP Spec. No. : C409FP Issued Date : 2008.09.02 Revised Date : 2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 1.2Ω ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
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MTN7N60FP
C409FP
MTN7N60FP
O-220FP
UL94V-0
7N60
e-bike
CYStech Electronics
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Untitled
Abstract: No abstract text available
Text: MB12N65B0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB12N65B is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter
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MB12N65B0000000
MB12N65B
D020210
O-263
800pcs
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D0310
Abstract: No abstract text available
Text: MB06N65F0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MB06N65F0000000
MB06N65F
O220F
D020210
O-220F
50pcs
1000pcs
D0310
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Untitled
Abstract: No abstract text available
Text: MB12N65F0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB12N65F is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter
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MB12N65F0000000
MB12N65F
O220F
D020210
O-220F
50pcs
1000pcs
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