94N50
Abstract: No abstract text available
Text: Advance Technical Information IXFN94N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 68A 55m 250ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings
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IXFN94N50P2
250ns
E153432
100ms
94N50P2
9-13-A
94N50
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PD67
Abstract: cp 68a Capacitor 68A diode cp 68a PD6600A uPD69 6868A 67a68 cp 68a diode ASR-11 technical specifications
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD67, 67A, 68, 68A, 69 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 2.0 V low-voltage operation, carrier generator for infrared remote control transmission, standby release
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VMEbus interface handbook
Abstract: transistors BC 543 Cypress VMEbus Interface Handbook diode 68A VAC068 VIC068A LA18 14 pin ld18 transistor BC 147 FCT245
Text: fax id: 5600 1V AC0 68A VAC068A VMEbus Address Controller Features — Supports unaligned transfers • Optional companion part to VIC068A • Implements master/slave VMEbus interface in conjunction with the VIC068A • Complete VMEbus and I/O DMA capability for a 32-bit
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VAC068A
VIC068A
32-bit
64-Kbyte
VMEbus interface handbook
transistors BC 543
Cypress VMEbus Interface Handbook
diode 68A
VAC068
VIC068A
LA18 14 pin
ld18
transistor BC 147
FCT245
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100n60
Abstract: IXXR100N60B3H1
Text: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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10-30kHz
IC110
IXXR100N60B3H1
150ns
0-06A
100N60B3
12-01-11-B
100n60
IXXR100N60B3H1
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68A diode
Abstract: k 68a APTM100A12ST
Text: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies S2 G2 NTC1 NTC2
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APTM100A12ST
68A diode
k 68a
APTM100A12ST
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Untitled
Abstract: No abstract text available
Text: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ Ω max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features
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APTM100A12ST
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Untitled
Abstract: No abstract text available
Text: AP9974AGS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D Single Drive Requirement RDS ON Fast Switching Characteristic ID RoHS Compliant & Halogen-Free 60V 12m 68A G S Description
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AP9974AGS-HF
O-263
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP78T10GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Characteristic 100V RDS ON 14m ID G RoHS Compliant & Halogen-Free BVDSS 68A S Description
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AP78T10GP-HF
O-220
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP9952GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 70V 12m 68A S Description
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AP9952GP-HF
O-220
100us
100ms
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NEC HMC-68A
Abstract: UPD67A 68A diode PD6600A PD67 uPD69 6868A asr10 ASR-11 technical specifications 12C7H
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD67, 67A, 68, 68A, 69 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 2.0 V low-voltage operation, carrier generator for infrared remote control transmission, standby release
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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IC110
IXXR100N60B3H1
150ns
10-30kHz
ISOPLUS247TM
0-06A
100N60B3
12-01-11-B
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9412GI
Abstract: No abstract text available
Text: AP9412GI RoHS-compliant Product Advanced Power Electronics Corp. Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS Single Drive Requirement RDS ON Full Isolation Package ID 30V 6m 68A G S Description Advanced Power MOSFETs from APEC provide the designer with
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AP9412GI
O-220CFM
O-220CFM
9412GI
9412GI
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Untitled
Abstract: No abstract text available
Text: AP9412AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS 30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 6m 68A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP9412AGH
O-252
O-252
9412AGH
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Untitled
Abstract: No abstract text available
Text: AP9974AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS ON 12mΩ ID G 68A
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AP9974AGP-HF
O-220
VG00us
100ms
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9974AGH
Abstract: AP9974AGH 220E-2 AP9974 TO252 rthjc N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
Text: AP9974AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS ON 12mΩ ▼ Surface Mount Package ID ▼ Low Gate Charge D 68A G S Description Advanced Power MOSFETs from APEC provide the
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AP9974AGH
O-252
O-252
9974AGH
9974AGH
AP9974AGH
220E-2
AP9974
TO252 rthjc
N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
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Untitled
Abstract: No abstract text available
Text: AP9974AGP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D Single Drive Requirement RDS ON Fast Switching Characteristic ID 60V 12m 68A G S Description Advanced Power MOSFETs from APEC provide the
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AP9974AGP
O-220
100us
100ms
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Untitled
Abstract: No abstract text available
Text: XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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MMIX1X100N60B3H1
IC110
10-30kHz
0-06A
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AP9974
Abstract: AP9974AGH-HF
Text: AP9974AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS ON 12mΩ ID G 68A S Description
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AP9974AGH-HF
O-252
100us
100ms
AP9974
AP9974AGH-HF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information VCES = 600V IC110 = 68A VCE sat ≤ 1.35V IXGN72N60A3 GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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IC110
IXGN72N60A3
OT-227B,
E153432
72N60A3
3-25-08-B
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Untitled
Abstract: No abstract text available
Text: AP9974AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS ON 12mΩ ID G 68A S Description
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AP9974AGH-HF
O-252
100ms
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Untitled
Abstract: No abstract text available
Text: rEHEPATOPHblM TPMOfl ry-68A r eHepaTopHbiM TRIODE Tpuo,q ry-68A npeflHa3HaneH pa60Tbi b KanecTBe ycwiMTe/iH mol^ hoctm Ha nacTOTax ,qo 30 MI"m b CTaqnoHapHbix nepeflaiounnx ycTpoMCT- The ry-68A triode is used for power amplification at up to 30 MHz in stationary RF transmitters.
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ry-68A
ry-68A
B03flyWH0e.
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k 68a
Abstract: ScansU9X26
Text: rEHEPATOPHblM TPMOfl ry-68A TRIODE r eHepaTopHbiM Tpuo,q ry-68A npeflHa 3 H a n e H K a n e c T B e ycwiMTe/iH m o l ^ h o c t m H a nac T O T a x ,qo 30 MI"m b CTaqnoHapHbix nepeflaiounnx ycTpoMCTBax. pa 60Tbi b The ry-68A triode is u sed for p o w e r amplification at
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ry-68A
ry-68A
60Tbi
k 68a
ScansU9X26
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diode sg 64
Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
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SG5768/68A
SG5770/70A,
SG5772/72A,
SG5774/74A
SG25768,
SG25770,
SG6496/96A
500mA
14-PIN
diode sg 64
SG5774AJ
SG5772J
SG25768
sf 819 d
1N5772 JANTX
1N5768
SG25770J
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BY206
Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
Text: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter
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BSW66A
711002b
DD4237Ã
BSW67A
BSW68A
711Qa2b
Q0M53B5
BY206
k 68a
Silicon Epitaxial Planar Transistor philips
silicon planar epitaxial transistors
Philips 1990
LG 68A
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