TGA1152-EPU
Abstract: TGA1152-SCC capacitors coefficient of thermal expansion 39dBm
Text: Product Data Sheet March 19, 2001 13.75 - 15 GHz 2 Watt Power Amplifier TGA1152-SCC Key Features • • • • • • 0.5 um pHEMT Technology 34 dB Nominal Gain 33 dBm Nominal Pout @ Pin = 3 dBm OTOI 39dBm Typical Bias 7V @ 682 mA Chip Dimensions 1.390mm x 2.495mm
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TGA1152-SCC
39dBm
390mm
495mm
0007-inch
TGA1152-EPU
TGA1152-SCC
capacitors coefficient of thermal expansion
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2sk682
Abstract: k682 2SK683
Text: blE D 44*ib2[]S DG13121 h31 IHIT4 2SK682,2SK683 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES r • Low On-Resistance • • High Speed Switching Low Drive Current • • No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter
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DG13121
2SK682
2SK683
k682
2SK683
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2SK683
Abstract: 2SK682 2SK68 DIODE 720
Text: blE D 44^b20S 00131E1 L3L IHITM 2SK682,2SK683 SILICO N N -C H A N N E L MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter
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00L31E1
2SK682
2SK683
2SK682,
GD1312M
2SK68
DIODE 720
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SMR 40000
Abstract: SMR 60000 transistor pcr 606 j ic HD6433037F SCR IC CHIP block diagram induction heating h8 family Nippon capacitors PCR 606 J renesas tioca pwm
Text: REJ09B0353-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/3039 Group, H8/3039F-ZTAT
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REJ09B0353-0300
H8/3039
H8/3039F-ZTATTM
16-Bit
H8/300H
H8/3037
HD6433037F
HD64F3039F
HD6433037TE
SMR 40000
SMR 60000
transistor pcr 606 j
ic HD6433037F
SCR IC CHIP
block diagram induction heating
h8 family
Nippon capacitors
PCR 606 J
renesas tioca pwm
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SMR 40000
Abstract: smr 40000 c ac din hfe nv SCHEMATIC circuit scr oscillator HD6433039F HD6433039TE HD64F3039F HD64F3039TE HD64F3039VF HD64F3039VTE
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8/3039
H8/3039F-ZTATTM
REJ09B0353-0300
SMR 40000
smr 40000 c
ac din hfe nv
SCHEMATIC circuit scr oscillator
HD6433039F
HD6433039TE
HD64F3039F
HD64F3039TE
HD64F3039VF
HD64F3039VTE
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BF 998 marking code mow
Abstract: HD64F7047 MB26 philips motor mb12 MB418 MB428 bosch 0 281 002 667 hall circuit transistor bosch 0 281 002 667 HD6437049 HD6437148
Text: SH7046 Series SH7046 HD64F7046, HD6437148 SH7047 HD64F7047, HD6437049 Hardware Manual ADE-602-237 Rev. 1.0 3/8/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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SH7046
SH7046
HD64F7046,
HD6437148
SH7047
HD64F7047,
HD6437049
ADE-602-237
BF 998 marking code mow
HD64F7047
MB26
philips motor mb12
MB418
MB428
bosch 0 281 002 667
hall circuit transistor bosch 0 281 002 667
HD6437049
HD6437148
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MB418
Abstract: 18MB150 Hitachi DSAUTAZ006 TCFG Series mb1517
Text: SH7046 Series SH7046 HD64F7046, HD6437148 SH7047 HD64F7047, HD6437049 Hardware Manual ADE-602-237 Rev. 1.0 3/8/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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SH7046
SH7046
HD64F7046,
HD6437148
SH7047
HD64F7047,
HD6437049
ADE-602-237
MB418
18MB150
Hitachi DSAUTAZ006
TCFG Series
mb1517
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stk 681
Abstract: stk 453 11-903 3105b 99-922.7
Text: Befehls- und Meldegeräte 99 99 Befehls- und Meldegeräte Inhaltsübersicht Baureihe 99 Beschreibung Seite 673 Geräteaufbau Seite 674 Sortiment - Geräte Standard Einbau - Zubehör / Einzelteile 672 03.2000 Seite 675 Seite 680 Technische Daten Seite 684 Massbilder / Lochbilder / Bauteilelayouts
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Untitled
Abstract: No abstract text available
Text: FLU17XM L - B an d M edium & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature
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FLU17XM
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fsx51x
Abstract: No abstract text available
Text: FSX51X GaAs FET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current IDSS Condition Min. Limit Typ. Max. Unit Vos =3V, VGS =0V 30 60 120 mA Transconductance gm V d S = 3V, Id s =30mA 18 25 - mS Pinch-off Voltage
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FSX51X
fsx51x
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Untitled
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
VDS19
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GaAs FET HEMT Chips
Abstract: 1756 N2 C-Band Power GaAs FET HEMT Chips 1060 fet FLC157XP 682 FET
Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for
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FLC157XP
FLC157XP
GaAs FET HEMT Chips
1756 N2
C-Band Power GaAs FET HEMT Chips
1060 fet
682 FET
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Untitled
Abstract: No abstract text available
Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for
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FLC157XP
FLC157XP
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20GHz
Abstract: FLU17XM
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
20GHz
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Untitled
Abstract: No abstract text available
Text: S M ELECTRONICS Samsung Microwave Semiconductor F - 0 3 1 1 0 G a in O p t Ì lT I Ì Z G C l GaAs FET 2-14 GHz Description Features The SM F-03110-200 is a packaged version of the SMF03100-200. The chip is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain
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F-03110-200
SMF03100-200.
SMF-03100-200
G0171Sfl
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Untitled
Abstract: No abstract text available
Text: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK638-1000A/B
7110fiEb
BUK638
BUK638-10OOA/B
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K638
Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a
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BUK638-1000A/B
0G44744
BUK638
-1000A
-1000B
K638-1OOOA/B
711Gfi5b
04M74L
K638
transistor S52
DIODE 1000a
fet 1000A
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Untitled
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for
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FLC157XP
FLC157XP
FCSI0598M200
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GaAs FET HEMT Chips
Abstract: 1756 N2 FLC157XP
Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for
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FLC157XP
FLC157XP
FCSI0598M200
GaAs FET HEMT Chips
1756 N2
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FLU17XM
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P-|C|g=32.5dBnn Typ. • High Gain: G-|C|g=13.5dB (Typ.) • High PAE: r iadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
FCSI0598M200
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FLC157XP
Abstract: C-Band Power GaAs FET HEMT Chips fujitsu hemt fujitsu gaas fet
Text: FLC157XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 31.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability DESCRIPTION
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FLC157XP
FLC157XP
FCSI0598M200
C-Band Power GaAs FET HEMT Chips
fujitsu hemt
fujitsu gaas fet
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FLU17XM
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FCSI0598M200
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