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    LM2660-MWC Texas Instruments 100mA switched capacitor voltage converter 0-WAFERSALE -40 to 85 Visit Texas Instruments
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    660MW Price and Stock

    Texas Instruments LM2660-MWC

    IC REG CHARGE PUMP INV WAFERSALE
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    DigiKey LM2660-MWC Bulk 207
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    Mouser Electronics LM2660-MWC
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    Panasonic Electronic Components ERJ-P08J102V

    Thick Film Resistors - SMD 1206 1Kohms 5% Thick Film Resistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI ERJ-P08J102V Reel 280,000 5,000
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    Panasonic Electronic Components ERJ-P08J302V

    Thick Film Resistors - SMD 1206 3Kohms 0.66W 5% AEC-Q200
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    TTI ERJ-P08J302V Reel 190,000 5,000
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    Panasonic Electronic Components ERJ-P08J330V

    Thick Film Resistors - SMD 1206 33ohms 0.66W 5% AEC-Q200
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    TTI ERJ-P08J330V Reel 85,000 5,000
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    Nexperia PMEG3010EGWX

    Schottky Diodes & Rectifiers PMEG3010EGW/SOD123/SOD2
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    TTI PMEG3010EGWX Reel 81,000 3,000
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    660MW Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED High Power Top LED SMBB910D-1100 Lead Pb Free Product – RoHS Compliant SMBB910D-1100 High Power Top LED SMBB910D-1100 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package These devices are available to be operated and 660mW/sr at IFP=3A.


    Original     		PDF SMBB910D-1100 SMBB910D-1100 660mW/sr 1000um 1000um 910nm

    a 3140

    Abstract: IDT7207
    Text: CMOS ASYNCHRONOUS FIFO 32,768 x 9 PRELIMINARY IDT7207 Integrated Device Technology, Inc. FEATURES: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write


    Original     		PDF IDT7207 660mW IDT720x MIL-STD-883, IDT7207 a 3140

    IDT7208

    Abstract: No abstract text available
    Text: CMOS ASYNCHRONOUS FIFO 65,536 x 9 ADVANCE INFORMATION IDT7208 Integrated Device Technology, Inc. FEATURES: • 65536 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write


    Original     		PDF IDT7208 660mW IDT720x MIL-STD-883, IDT7208

    IDT7207

    Abstract: IDT720X ta 7207
    Text:  CMOS ASYNCHRONOUS FIFO 32,768 x 9 IDT7207 Integrated Device Technology, Inc. FEATURES: • 32768 x 9 storage capacity • High-speed: 20ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write


    Original     		PDF IDT7207 660mW IDT720x MIL-STD-883, IDT7207 ta 7207

    LTC5541

    Abstract: LT5554 LT5579 LTC5540 LT5578 LTC5542 LTC5543 LT5570 LT5557
    Text: LTC5542 1.6GHz to 2.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8dB at 2.4GHz IIP3: 26.8dBm at 2.4GHz Noise Figure: 9.9dB at 2.4GHz 17.3dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption


    Original     		PDF LTC5542 660mW 20-Lead 600MHz LTC5542 140MHz, 900MHz, 500ns 78dBFS 250MHz LTC5541 LT5554 LT5579 LTC5540 LT5578 LTC5543 LT5570 LT5557

    LTC5543

    Abstract: j349 Transistor J182 2595MHz j182 LTC5540 LTC5542 LTE bandpass filter j455 0603CS
    Text: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption


    Original     		PDF LTC5543 2500MHz 660mW 20-Lead 600MHz LTC5543 26dBm 12dBm j349 Transistor J182 2595MHz j182 LTC5540 LTC5542 LTE bandpass filter j455 0603CS

    980nm pump laser

    Abstract: SM98-PS-U25A-H laser diode 980nm single mode GR-468-CORE
    Text: +&1; 660mW Kink-Free, FBG Stabilized 980nm Laser Pump Module Features: >600mW operating power Epoxy free, flux free 14-pin low profile butterfly package Fiber Bragg Grating FBG stabilized with either PM or SM Fiber pigtail Low total power consumption:


    Original     		PDF 660mW 980nm 600mW 14-pin GR-468-CORE 14pin 600mW. HCN976BS500 980nm pump laser SM98-PS-U25A-H laser diode 980nm single mode

    a 3140

    Abstract: IDT7207 7201
    Text: CMOS ASYNCHRONOUS FIFO 32,768 x 9 IDT7207 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write


    Original     		PDF IDT7207 660mW IDT720x MIL-STD-883, -40oC IDT7207 a 3140 7201

    LT5554

    Abstract: LTC5540 LT5578 LTC5543 LTC5542 LT5570 LT5557 LT5568
    Text: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption


    Original     		PDF LTC5543 2500MHz 660mW 20-Lead 600MHz LTC5543 26dBm 12dBm LT5554 LTC5540 LT5578 LTC5542 LT5570 LT5557 LT5568

    MAX3875

    Abstract: MAX3885 MAX3885ECB
    Text: 19-4767; Rev 0; 9/98 +3.3V, 2.488Gbps, SDH/SONET 1:16 Deserializer with LVDS Outputs Features ♦ Single +3.3V Supply ♦ 2.488Gbps Serial to 155Mbps Parallel Conversion ♦ 660mW Operating Power ♦ LVDS Data Outputs and Synchronization Inputs ♦ Self-Biasing PECL Inputs Ease AC Coupling


    Original     		PDF 488Gbps, 488Gbps 155Mbps 660mW MAX3885ECB PD15- MAX3875 MAX3885 MAX3875 MAX3885 MAX3885ECB

    TC4-1W-7ALN

    Abstract: WBC4-6TLB J842 G18A LTC5541 J221 LTC2242-12 LTC5543 LTC5540 LTC5542
    Text: LTC5542 1.6GHz to 2.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n Conversion Gain: 8dB at 2.4GHz IIP3: 26.8dBm at 2.4GHz Noise Figure: 9.9dB at 2.4GHz 17.3dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption


    Original     		PDF LTC5542 660mW 20-Lead 600MHz LTC5542 140MHz, 900MHz, 500ns 78dBFS 250MHz TC4-1W-7ALN WBC4-6TLB J842 G18A LTC5541 J221 LTC2242-12 LTC5543 LTC5540

    a 3140

    Abstract: IDT7207
    Text: CMOS ASYNCHRONOUS FIFO 32,768 x 9 PRELIMINARY IDT7207 Integrated Device Technology, Inc. FEATURES: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write


    Original     		PDF IDT7207 660mW IDT720x MIL-STD-883, IDT7207 a 3140

    IDT720X

    Abstract: depth expansion fifo pointer read write IDT7208
    Text: CMOS ASYNCHRONOUS FIFO 65,536 x 9 ADVANCE INFORMATION IDT7208 Integrated Device Technology, Inc. FEATURES: • 65536 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.) • Asynchronous and simultaneous read and write


    Original     		PDF IDT7208 660mW IDT720x MIL-STD-883, IDT7208 depth expansion fifo pointer read write

    km6161000bl7

    Abstract: No abstract text available
    Text: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6161OOOBL 64Kx16 550MW 660mW I/01-I/08 KM6161000BLT/LT-L: 400mil KM6161000BLR/LR-L: KM6161000BL/L-L km6161000bl7

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6161OOOBL 64Kx16 550nW 660mW KM6161OOOBLT/LT-L: 400mil KM6161OOOBLR/LR-L: KM6161000BL/L-L 576-bit

    IMS1420M

    Abstract: IMS1420S-55M IMS1420S-70M IMS1420S55M IMS1420N-55M IMS1420N-70M
    Text: IMS1420M High Performance 4Kx4 Static RAM MIL-STD-883C lín m o s DESCRIPTION FEATURES The INMOS IMS1420M is a high performance 4Kx4 Static RAM processed in full compliance to MIL-STD883C with access times of 55ns and 70ns and a maximum power consumption of 660mW. These characteristics are


    OCR Scan     		PDF IMS1420M MIL-STD-883C MIL-STD-883C 20-Pin, 300-mil 20-Pin IMS1420M 660mW. prop20N-55M IMS1420S-55M IMS1420S-70M IMS1420S55M IMS1420N-55M IMS1420N-70M

    Untitled

    Abstract: No abstract text available
    Text: CMOS ASYNCHRONOUS FIFO 32,768 X 9 IDT7207 In te g ra te d D e vice T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max. — Power-down: 44mW (max.)


    OCR Scan     		PDF IDT7207 660mW IDT720x MIL-STD-883, IDT7207

    Untitled

    Abstract: No abstract text available
    Text: S4E D MOSEL basaan oooists ”W s E L - V Ï T E L I C ADVANCED INFORMATION FEATURES • High-speed access: 45/55/70ns • Low Power consumption Both ports active: 660mW Both ports standby: 1,1 mW • Wider word widths of 16-bits or more can easily be created by using the Master/Slave chip select and


    OCR Scan     		PDF MS6138 45/55/70ns 660mW 16-bits 64-lead 40mil 120mA MS6138 PID008

    Untitled

    Abstract: No abstract text available
    Text: IMS1420M High Performance 4Kx4 Static RAM MIL-STD-883C imos FEATURES DESCRIPTION The INMOS IMS1420M is a high performance 4Kx4 Static RAM processed in full compliance to MIL-STD883C with access times of 55ns and 70ns and a maximum power consumption of 660mW. These characteristics are


    OCR Scan     		PDF IMS1420M MIL-STD-883C MIL-STD-883C 20-Pin, 300-mil 20-Pin IMS1420M MIL-STD883C 660mW.

    Untitled

    Abstract: No abstract text available
    Text: CMOS ASYNCHRONOUS FIFO 32,768 X 9 :fflS'Np Idt PRELIMINARY IDT7207 Integrated Device Technology, Inc. FEATURES: • 32768 x 9 storage capacity • High-speed: 15ns access time • Low power consumption — Active: 660mW max.) — Power-down: 44mW (max.)


    OCR Scan     		PDF IDT7207 660mW IDT720x MIL-STD-883, IDT7207

    ttl 7493

    Abstract: IMS1400N-45M
    Text: IMS1400M • High Performance 16K Static RAM MIL-STD-883C i m os DESCRIPTION FEATURES The INMOSIMS1400M is a high performance 16Kx1 Static RAM processed in full compliance to MIL-STD883C with access times as fast as45nsecanda maximu m power consumption of 660mW, These characteristics are


    OCR Scan     		PDF IMS1400M MIL-STD-883C INMOSIMS1400M 16Kx1 MIL-STD883C as45nsecanda 660mW, IMS1400M 1MS1400M 165mW. ttl 7493 IMS1400N-45M

    TC5116400

    Abstract: tc5116400csj 300D1 toshiba RAS-25
    Text: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M


    OCR Scan     		PDF TC5116400CSJ/CST 300mil) 400CSJ/C TC5116400 CSJ/CST-40 CSJ/CST-50 tc5116400csj 300D1 toshiba RAS-25

    A100COLUMN

    Abstract: No abstract text available
    Text: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/AZ-60 A100COLUMN

    tc5117400f

    Abstract: TC5117400J
    Text: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF TC5117400J/Z/FT-60/70 TC5117400J/Z/FT-60/70 TC5117400J/Z/FT. 1MX16 tc5117400f TC5117400J