65MH Search Results

ARF461AG

Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
Contextual Info: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

C0603COG500-680JNE

Abstract: SRF-1016 C0603COG500-101JNE SRF-2016
Contextual Info: SRF-1016 Z 65MHz to 300MHz Silicon Germanium IF Receiver SRF-1016(Z) Preliminary 65MHz to 300MHz SILICON GERMANIUM IF RECEIVER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s SRF-1016 is a quadrature demodulator RFIC designed for UHF

R0605250L1

Abstract: Premier Devices Germany
Contextual Info: Product Specification R0605250L1 Si Reverse, low current, 5 – 65 MHz, 25.2dB typ. Gain @ 65MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise

Contextual Info: KSE210 KSE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to KSE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJE210

Contextual Info: MJE210 MJE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to MJE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSE200 KSE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: 65MHz SAW Filter 24MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN06505 www.sipatsaw.com Features — For IF SAW filter — High attenuation — Single-ended operation — Dual In-line Package

Contextual Info: PLL520-80 Low Phase Noise VCXO 9.5-65MHz DIE CONFIGURATION FEATURES XIN DIE SPECIFICATIONS Name Value Size Reverse side Pad dimensions Thickness 62 x 65 mil GND 80 micron x 80 micron 10 mil OUTSEL0^ VDD VDD VDD VDD N/C Reserved OUTSEL1^ 24 23 22 21 20 19

Contextual Info: PLL620-88/-89 Low Phase Noise XO 9.5-65MHz Output PIN CONFIGURATION FEATURES •      Crystal input range: 19MHz to 65MHz Output range: 9.5MHz – 65MHz Very low phase noise and jitter Complementary outputs: o LVPECL (PLL620-88) o LVDS (PLL620-89)

ABV2088

Abstract: ABV2088OC ABV2088OC-T ABV2089 E5500
Contextual Info: Preliminary ABV2088/89 Low Phase Noise VCXO 9.5-65MHz FEATURES 19MHz to 65MHz fundamental crystal input. Output range: 9.5MHz – 65MHz Complementary outputs: PECL or LVDS output. Selectable OE Logic (enable high or enable low). Integrated variable capacitors.

Contextual Info: PLL620-80 Low Phase Noise XO 9.5-65MHz Output DIE CONFIGURATION FEATURES XIN OUTSEL0^ VDD VDD VDD VDD N/C Reserved OUTSEL1^ 24 23 22 21 20 19 18 17 26 Die ID: A2020-20B XOUT 27 N/C 28 S2^ 29 OE CTRL 30 N/C 31 C502A 16 CMOS 15 LVDSB 14 PECLB 13 12 VDDBUF

Contextual Info: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COL LECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fr=65MHz lc=100mA • Complement to KSE210 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage

ARCO

Abstract: ARF448
Contextual Info: A dvanced P ow er T e c h n o lo g y ^ ARF448A ^ RF POWER MOSFETs N -C H A NN EL ENHANCEMENT MODE 150V 250W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

Contextual Info: Product Specification R0605250L Si Reverse, low current, 5 – 65 MHz, 25.2dB typ. Gain @ 65MHz, 140mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise

Contextual Info: ARF460A/G ARF460B/G 125V, 150W, 65MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE TO -2 47 Common Source The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power

MJE200

Abstract: MJE210
Contextual Info: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

VK200-4B

Abstract: ARF446 ARF447
Contextual Info: ARF446 ARF447 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 140W 65MHz The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

ARF448A

Abstract: ARF446 ARF447 ARF448B VK200-4B
Contextual Info: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

arco mica trimmer

Abstract: class B push pull power amplifier ARF461A ARF461B VK200-4B class td amplifier
Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

Contextual Info: CONNOR—WINFIELD CORPORATION AURORA, IL. 60505 PHONE 630 851-472 2 FAX (630) 851 -5 0 4 0 HIGH FREQUENCY VCXO WITH T R I - STATE HVT54I— 100 SPECIFICATIONS Frequency Range (Fo) 30MHz to 100MHz HVT54I— 150 30MHz to 100MHz HVT54I— 200 30MHz to 65MHz

LC 21 B

Abstract: KSE200 KSE210
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSE200 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA • C om plem ent to KSE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage

MJE200

Abstract: MJE210
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic V obo

Contextual Info: VT Type 7.0 x 5.0 mm SMD PECL/LVDS Voltage Controlled Crystal Oscillator PECL Parameter Supply Voltage Variation VDD 5% Frequency Range Standard Frequency Absolute Pulling Range (APR) Control Voltage Range Supply Current 1.5MHz ≦F0 < 65 MHz 65MHz ≦F0 < 200 MHz

M74HC4060

Abstract: M74HC4060B1R M74HC4060M1R M74HC4060RM13TR M74HC4060TTR
Contextual Info: M74HC4060 14 STAGE BINARY COUNTER/OSCILLATOR • ■ ■ ■ ■ ■ ■ HIGH SPEED: fMAX = 65MHz TYP. at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)