65747 Search Results

Matra-Harris Semiconductor

Abstract: MATRA MHS HMT "18-Pin LCC" MATRA-HARRIS HM3-65756 matra harris
Contextual Info: I 75 foO^f HM «5747 /1ATRA-HARRIS SEMICONDUCTOR 4K x 1 HIGH SPEED CM#S SRAM Q JA N U A R Y 1987 Features • • • • • • • • • Pinout HIG H S P E E D , F A S T A C C E S S T IM E : 2 5 /3 5 /4 5 ns A S Y N C H R O N O U S IN P U T S S T A N D B Y C U R R E N T : 1 0 m A m ax

microcontroller based caller id by using 8051

Abstract: sound activated based lcd message display 8051 0038a 8088 memory interface SRAM ECHO canceller IC ED11 ED12 ED13 MX93002 MX93032
Contextual Info: MX93032 APPLICATION NOTE [M1 VERSION] 1.0 GENERAL DESCRIPTIONS echo cancellation and acoustical echo cancellation, etc. • The MX93032-M1 has built-in DSP mode and MCU mode. In DSP mode, users do not need external microprocessors and can effectively reduce the overall

Contextual Info: MX27C8100 8M-BIT [1M x8/512K x16] CMOS OTP ROM FEATURES • • • • • • Operating current: 60mA • Standby current: 100uA • Package type: 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation

Contextual Info: ADVANCED INFORMATION MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current

RO4403

Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Contextual Info: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

Contextual Info: INDEX ADVANCED INFORMATION MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

Contextual Info: INDEX ADVANCED INFORMATION MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

PDIP-32

Contextual Info: M X2302000 2M-BIT M A S K ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 256K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current - Operating: 40mA - Standby: 100jaA - (50jliA for PLCC) • Supply voltage - 5V ± 10%

Contextual Info: MX23L8111 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max. - Page access: 50ns (max.) • Current - Operating: 20mA - Standby: 20uA

Contextual Info: MX 23L 1Ol O 1M-BIT MASK ROM 8-BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 1 28K x 8 (byte mode) • Fast access time - Random access: 150ns • Current - Operating: 20mA - Standby: 20uA • Supply voltage - 2.7V ~ 3.6V • Package -3 2 pin SOP (450 mil)

Contextual Info: MX23C3211 32M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 100ns (max.) - Page access: 30ns (max.) • Page Size - 8 words per page • Current

27l41

Contextual Info: IWKIC M X 2 7 U 1 0 0 / 27L4096 4 M -BIT 5 1 2 K x 8 / 2 5 6 K x 1 6 CM OS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V

Contextual Info: MX23L3222 32M-BIT MASK ROM 16/32 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 2M x 16 (word mode) - 1 M x 32 (double word mode) • Fast access time - Random access: 100ns (max.) - Page access: 30ns (max.) • Page - 8 double words per page

Contextual Info: IW Â O T Â i û i P OiFÛPMÂTOÛi M X2 7 Cl 6 1 O K IC 1 6 M -BIT[2 M X 8/ 1 M x 1 6] CMOS OTP ROM FEATURES • • • • • 2M x 8 or 1M x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible

nrzi to nrz circuit diagram

Abstract: nrzi to nrz converter circuit diagram MXIC MX mxic
Contextual Info: 1 OOBASETX PHYSICAL DATA TRANSCEIVER 1.0 FEATURES • • • • • • • • • • • Full-Duplex Operation Generates 125-Mhz Transmit Clock and 25-Mhz SYMCLK Converts 5-Bit Parallel Transmit Data to 1-Bit Serial Data Converts Transmit NRZ Data to NRZI Data

MX27C8111

Contextual Info: Introduction Selection Guide PRELIMINARY MX27C8111 8M-BIT[1M x 8/512K x 16] CMOS OTP ROM WITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time:90/100/120/150 ns

MX23L1611MI-12

Abstract: MX23L1611TC-10 MX23L1611TC-12 MX23L1611TI-12 MX23L1611 MX23L1611MC-10 MX23L1611MC-12
Contextual Info: Introduction PRELIMINARY MX23L1611 16M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 2M x 8 (byte mode) - 1M x 16 (word mode) • Fast access time - Random access: 100ns (max.) - Page access: 30ns (max.) • Page Size - 8 words per page

MX28F2100B

Contextual Info: Introduction Selection Guide PRELIMINARY MX28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

23C2000

Abstract: MX23C2000 MX23C2000MC-90 MX23C2000PC-10 MX23C2000PC-12 MX23C2000PC-15 MX23C2000PC-90 MX23C2000QC-10 MX23C2000QC-12 MX23C2000QC-15
Contextual Info: Introduction Selection Guide MX23C2000 2M-BIT Mask ROM 8 Bit Output FEATURES ORDER INFORMATION • Bit organization - 256K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current - Operating: 40mA - Standby: 100mA - (50mA for PLCC)

MX27C4000DC

Abstract: MX27C4000DC-90 MX27C4000DC-12 MX27C4000DC10 MX27C4000DC90 EPROM sop 40 27C4000-15 IN3064 MX27C4000 MX27C4000DC-15
Contextual Info: Introduction Selection Guide MX27C4000 4M-BIT 512K x 8 CMOS EPROM FEATURES • • • • • 512K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 90/100/120/150 ns Totally static operation • • • • Completely TTL compatible

MX27C4111

Contextual Info: Introduction Selection Guide PRELIMINARY MX27C4111 4M-BIT 512K x 8/256K x 16 CMOS EPROM WITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns

26C1000A

Abstract: IN3064 MX26C1000A MX27C1000 26C1000 mx26c1000aqc-12
Contextual Info: Introduction Selection Guide PRELIMINARY MX26C1000A 1M-BIT[128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • • • Standby current: 100µA • 100 minimum erase/program cycles • Package type: - 32 pin PDIP Y - 32 pin SOP

MX27C1610PC-10

Abstract: IN3064 MX27C1610 MX27C1610MC-15
Contextual Info: Introduction Selection Guide ADVANCED INFORMATION MX27C1610 16M-BIT[2M x 8/1M x 16] CMOS OTP ROM FEATURES • • • • • 2M x 8 or 1M x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible