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    86553141TLF Amphenol Communications Solutions DSUB MALE METAL CAP SEAL Visit Amphenol Communications Solutions
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    Kyocera AVX Components 009296006553906

    CONN WIR POKE-IN 6P 18-26AWG SMD
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    DigiKey 009296006553906 Cut Tape 13,960 1
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    TDK Corporation DEA165538BT-2263A1-H

    RF FILTER BAND PASS 5GHZ 0603
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    TDK Electronics B65531D0040A001

    FERRITE CORE P 40NH K1 2PCS
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    DigiKey B65531D0040A001 Box 1,776 1
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    Amphenol Communications Solutions 86553114TLF

    CONN DSUB 15POS SOCKET METAL CAP
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    DigiKey 86553114TLF Tray 942 1
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    Pulse Electronics Corporation PE-65535NL

    XFRMR 64KBPS 1:2CT 20MH T/H
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    DigiKey PE-65535NL Tube 712 1
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    6553 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    6553 Pomona Accessories, Test and Measurement, ADAPTER O-SCOPE TO SMD GRABBER Original PDF
    6553-0-15-15-11-27-10-0 Mill-Max Manufacturing Connectors, Interconnects - Terminals - PC Pin Receptacles, Socket Connectors - PRESS-FIT RECEPTACLE; ACCEPTS .0 Original PDF
    65530206515303 Wurth Elektronik RPSMA BULKHEAD JACK TO MCX STRAI Original PDF
    65530206515304 Wurth Elektronik RPSMA BULKHEAD JACK TO MCX STRAI Original PDF
    65530206515305 Wurth Elektronik RPSMA BULKHEAD JACK TO MCX STRAI Original PDF
    65530260515303 Wurth Elektronik RPSMA BULKHEAD JACK TO MMCX STRA Original PDF
    65530260515304 Wurth Elektronik RPSMA BULKHEAD JACK TO MMCX STRA Original PDF
    65530260515305 Wurth Elektronik RPSMA BULKHEAD JACK TO MMCX STRA Original PDF
    6-5530843-5 Tyco Electronics Standard Edge II ( SEC II ) Card Edge & SEC II Power Connectors; CONN SEC II 31 POS 100C/L ( AMP ) Original PDF
    6-5530843-5 Tyco Electronics Standard Edge II ( SEC II ) Card Edge & SEC II Power Connectors; CONN SEC II 31 POS 100C/L ( AMP ) Original PDF
    6-5530843-5 Tyco Electronics Standard Edge II ( SEC II ) Card Edge & SEC II Power Connectors; CONN SEC II 31 POS 100C/L ( AMP ) Original PDF
    6-5530843-5 Tyco Electronics Standard Edge II ( SEC II ) Card Edge & SEC II Power Connectors; CONN SEC II 31 POS 100C/L ( AMP ) Scan PDF
    6-5530843-5 Tyco Electronics Standard Edge II ( SEC II ) Card Edge & SEC II Power Connectors; CONN SEC II 31 POS 100C/L ( AMP ) Scan PDF
    6-5530843-5 Tyco Electronics Standard Edge II ( SEC II ) Card Edge & SEC II Power Connectors; CONN SEC II 31 POS 100C/L ( AMP ) Scan PDF
    65534 Brady Worldwide B837 5.75X3 RED/BLK/WHT LO TAGS Original PDF
    65535 Intel Controllers, High Performance Flat Panel/CRT VGA Controller Original PDF
    65535 Chips and Technologies High Performance Flat Panel / CRT VGA Controller Scan PDF
    6-5535512-1 Tyco Electronics .100 Inch Centerline-AMPMODU Receptacles; 04 MODII HORZ DR CE EESS .100 ( AMP ) Original PDF
    6-5535512-1 Tyco Electronics .100 Inch Centerline-AMPMODU Receptacles; 04 MODII HORZ DR CE EESS .100 ( AMP ) Original PDF
    6-5535512-1 Tyco Electronics .100 Inch Centerline-AMPMODU Receptacles; 04 MODII HORZ DR CE EESS .100 ( AMP ) Scan PDF

    6553 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TLC32046

    Abstract: No abstract text available
    Text: TLC32046 WIDE-BAND ANALOG INTERFACE CIRCUITS Telecommunications Circuits See the TLC32046 Wide-Band Analog Interface Circuits Data Manual in Section 3 for product information. , Tex a s ^ In s t r u m e n t s POST OFFICE BOX 655303 * DALLAS, TEXAS 75265


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    TLC32046 PDF

    28F512A

    Abstract: 28F512A-12
    Text: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible TMS28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns 28F512A-12


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    SMJS514C-FEBRUARY TMS28F512A 28F512A-10 100ns 28F512A-12 120ns 28F512A-15 150ns 28F512A-17 170ns 28F512A PDF

    datasheet CI 556

    Abstract: W24512A W24512A-25 W24512AJ-25 W24512AS-25 W24512AT-25
    Text: W24512A 64K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.


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    W24512A W24512A 32-pin datasheet CI 556 W24512A-25 W24512AJ-25 W24512AS-25 W24512AT-25 PDF

    SMD-5962-89696

    Abstract: No abstract text available
    Text: Tem ic Semiconductors 64 K x 1 High Speed CMOS SRAM HM 65787 Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65787 is a high speed CMOS static RAM organized as 65536 x 1 bit. It is manufactured using


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    SMD5962-89696 SMD5962-8601 SMD-5962-89696 PDF

    W24512A

    Abstract: W24512A-35 W24512AS-35 W24512AT-35
    Text: W24512A 64K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.


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    W24512A W24512A 32-pin W24512A-35 W24512AS-35 W24512AT-35 PDF

    f11u

    Abstract: FC 0012 TSOP 50 PIN cs-7sa CS7SA k0219 EN5055
    Text: Ordering number : EN5055 _ CMOS LSI No. 5055 LC382161T-17 IS ipîppi; 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM J 8¡|lí¡Bí: 1 Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x


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    EN5055 LC382161T-17 LC382161 65536-word 16-bit 50-pin f11u FC 0012 TSOP 50 PIN cs-7sa CS7SA k0219 EN5055 PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication


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    SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP SCAS695A SN74V263 SN74V273 SN74V283 SN74V293 133-MHz PDF

    SN74V273

    Abstract: SN74V273-EP SN74V273PZAEP SN74V283 SN74V283-EP SN74V293 SN74V293-EP SN74V263 SN74V263-EP SN74V263PZAEP
    Text: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695 – JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication


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    SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP SCAS695 SN74V263 SN74V273 SN74V283 SN74V293 133-MHz SN74V273 SN74V273-EP SN74V273PZAEP SN74V283 SN74V283-EP SN74V293 SN74V293-EP SN74V263 SN74V263-EP SN74V263PZAEP PDF

    sop-40 16-bit

    Abstract: LC321664AJ LC321664AM SOJ40 MIFA ao3476
    Text: Ordering number : EN 4795A CMOS LSI No LC321664AJ, AM-80 4795A S A \Y O 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664A series is a CMOS dynamic RAM operating on a single 5 V power source and having a


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    LC321664A AM-80 65536-word 16-bit 40-pin 40-pin. LC321664AJ, a0s159 sop-40 16-bit LC321664AJ LC321664AM SOJ40 MIFA ao3476 PDF

    Untitled

    Abstract: No abstract text available
    Text: 23/06/2014 www.crouzet.com Programmable touch panels MTP6/50 & MTP8/50 PA Part number 88970502 MTP6/50 & MTP8/50 4.3''TFT-LCD compact resistive touch panels, 65536 colors, LED backlight Graphical resolution : 480 x 272 pixels Wide viewing angle : 70° horizontally and vertically


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    MTP6/50 MTP8/50 MTP8/50 2000/XP/Vista/7) RS232/RS485 PDF

    27pc512-2

    Abstract: 27PC512-20 TMS27C512
    Text: TMS27C512 65536 BY frBITUV ERASABLE TMS27PC512 65536 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS812G - NOVEMBER 1985 - REVISED SEPTEMBER 1997 • Organization. . . 65 536 by 8 Bits J PACKAGE • Single 5-V Power Supply TO P VIEW • Pin Compatible With Existing 512K MOS


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    TMS27C512 TMS27PC512 SMLS812G 27C/PC512-10 27C/PC512-12 27C/PC512-15 27C/PC512-20 27C/PC512-25 400-mV 27pc512-2 27PC512-20 PDF

    101490

    Abstract: No abstract text available
    Text: HM101490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.


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    HM101490 65536-Words 10/12ns 570mW 101490 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM6709A Series — Prelim inary 65536-Word x 4-Bit High Speed Static RAM • FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0^m Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required


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    HM6709A 65536-Word 65536-words 450mW 7/10/10ns HM6709AP-15 6709AP-20 6709AP-25 DP-28N) JP-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM6208/HM6208H Series 4-Bit CMOS Static RAM 65536-Word X 4-Bit High Speed CM O S Static RAM The Hitachi HM 6208 and HM 6208H are high speed 256k static R A M S organized as 64k-word x 4 bit. They realize high speed a cc e ss time 25/35/45 ns and low power consum ption, em ploying


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    HM6208/HM6208H 65536-Word 6208H 64k-word 32-bit 300-mil, M6208/H PDF

    mJI 1032

    Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
    Text: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a


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    EN5055 LC382161T-17 LC382161 65536-word 16-bit 50-pin c17G7b 0D15317 mJI 1032 T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60 PDF

    33166

    Abstract: free transistor and ic equivalent data 4712 LC331664M LC331664ML
    Text: [Ordering number : EN $*$4712 CMOS LSI LC331664M, ML-70/80/10 i SA\YO 1 MEG 65536 words x 16 bits Pseudo-SRAM j Preliminary "V Overview Package Dimensions The LC331664 scries is composed of pseudo static RAM thal operate on a single 5 V power supply and arc


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    LC331664M, ML-70/80/1 LC331664 40-ptn ML-70/80/10 1/09-I/O I/Oft-1/016 777fl 33166 free transistor and ic equivalent data 4712 LC331664M LC331664ML PDF

    Untitled

    Abstract: No abstract text available
    Text: M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 × 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


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    PDF

    TFT MOBILE DISPLAY I2C interface

    Abstract: eDIPTFT43-ATP 480x272 touch lcd digital eDIPTFT32-ATP
    Text: * * * * * * * No Controller Board required ! RS-232 + I²C Bus + SPI Character Set & Graphic Functions 3.2" and 4.3" / 65536 colors Single Supply +5V 3.2" also +3.3V Incl. Touch Panel Controller TOp. -20.+70°C 3.2" EA eDIPTFT32-ATP 4.3" EA eDIPTFT43-ATP


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    RS-232 eDIPTFT32-ATP eDIPTFT43-ATP TFT MOBILE DISPLAY I2C interface eDIPTFT43-ATP 480x272 touch lcd digital eDIPTFT32-ATP PDF

    100490

    Abstract: No abstract text available
    Text: FU JIT S U ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM100490-15 MBM100490-25 J u ly 1 9 8 7 E d tio n 1 .0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100490 is fu lly decoded 6 5536-bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage applications. This device is organized as 65536 words b y one b it, and it features


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    65536-BIT MBM100490-15 MBM100490-25 65536-BIT 5536-bit 22-LEAD DIP-22C-A02) 1079i 100490 PDF

    Untitled

    Abstract: No abstract text available
    Text: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled


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    DS3480-2 MA9187 MA9187 37bfi522 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349 A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword X 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing


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    HM621664HB 65536-word 16-bit ADE-203-349 64-kword 16-bit. 400-mil 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10490-1 5 MBM10490-25 July 1967 Edition 3.0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10490 is fu lly decoded 055 3 6 -bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage a pp li­


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    65536-BIT MBM10490-1 MBM10490-25 65536-BIT MBM10490-15 22LEAO DIP-22C-A02) PDF

    Untitled

    Abstract: No abstract text available
    Text: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith


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    HM62W1664H HM62W1864H 65536-word 16/18-bit 1664H 1864H 400-mil 44-pin 1664HJP-25 1664Hto PDF

    Untitled

    Abstract: No abstract text available
    Text: HM62W864 Series 65536-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-281B Z Rev. 2.0 Jul. 25, 1995 Description The Hitachi HM62W864 is a CMOS static RAM organized 64-kword X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process technology. It


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    HM62W864 65536-word ADE-203-281B 64-kword 525-mil 460-mil HM62W864LFP FP-32D) PDF