6514 RAM Search Results

mi 6514

Abstract: 6514 HM3-6514-9 6514S 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9
Contextual Info: HM-6514 S em iconductor 1 0 2 4 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

24502BVA

Abstract: 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM-6514
Contextual Info: HM-6514 TM 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and

HM3-6514-9

Abstract: HM-6514-9 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514B-9 HM3-6514S-9
Contextual Info: HM-6514 S E M I C O N D U C T O R 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

HM-6514-9

Abstract: hm6514-9 6514 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514-9
Contextual Info: HM-6514 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low

6514

Abstract: HM65 6514 ram
Contextual Info: HM-6514/883 Semiconductor 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

Contextual Info: HM-6514/883 TM 1024 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device

6514

Contextual Info: HM-6514/883 1024 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device

Contextual Info: HM-6514/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 CMOS RAM January 1992 Features Description • This Circuit is Processed In Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

1-6514S-9

Contextual Info: H M -6514 h a r r is Ë S E M I C O N D U C T O R Ë Ë WË Ë 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 125|iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

HM-6514-9

Contextual Info: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

Contextual Info: HM-6514/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

HM1-6514

Abstract: 6514b
Contextual Info: HM-6514/883 S E M I C O N D U C T O R 1024 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device

VDR 20-100

Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Contextual Info: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs

2114 Ram pinout 18

Contextual Info: MWS5114 H A R R IS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM February 1992 Description Features • Fully Static Operation • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 404S Types • Common Data Input and Output

6514

Contextual Info: HM-6514/883 HARRIS S E M I C O N D U C T O R 10 24 x 4 CMOS RAM January 1992 Description Features • This Circuit Is Processed in Accordance to Mil-Std883 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S tan db y. 125|iW Max.

18-PIN

Abstract: HM6514 IM6514 IM6514CJN IM6514IJN IM6514IPN IM6514MFN IM6514MJN
Contextual Info: IM 6514 4 0 9 6 Bit 1 K X 4 CMOS Static RAM ; y FEATURES GENERAL DESCRIPTION • • • • • • • • • The IM6514 is a high speed, low power CMOS Static RAM organized 1024 words by 4 bits. Input and three state out­ puts are TTL com patible and allow for direct interface with

Contextual Info: a HM-6514 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 C M O S RAM August 1996 Description Features Low Power Standby. 125|aW Max T he H M -6 5 1 4 is a 1024 x 4 static C M O S RAM fabricated using self-aligned silicon gate technology. The device utilizes

HM1-6514 REFERENCE

Contextual Info: Ì l i H A R R IS H S E M I C O N D U C T O R M - 6 5 1 4 10 24 x 4 CMOS RAM February 1992 Features Description • Low Power Standby. 125|iW Max. The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

18-PIN

Abstract: HM6514 IM6514 IM6514CJN IM6514IJN IM6514IPN IM6514MFN IM6514MJN IM651
Contextual Info: D IN nriraiL W ï ,-s V O ' ,.,a C* IM 6514 4 0 9 6 Bit 1 K X 4 CM OS S ta tic RAM i, # “ ' FEATURES GENERAL DESCRIPTION • • • • • • • • • The IM6514 is a high speed, low power CMOS S ta tic RAM organized 1024 words by 4 b ils. Input and three sta te out­

6514

Abstract: m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 HM-6514 6508 RAM a2712
Contextual Info: fW i HARRIS <ü SEM ICO N D U CTO R P R O D U C T S DIVISION HM-6514 A DIVISION OF H A R RIS CORPO RATION 1024 X 4 CM OS RAM Pinout Features T O P V IE W LOW PO W ER ST A N D B Y 250JUW M A X . L O W P O W E R O P E R A T IO N 35mW/MHz M A X . D A T A R E T E N T IO N

Contextual Info: Random-Access Memories RAMs MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A? * 4 - 3 I6 a 3 — 4 I - «8 I5 - A g CMOS 1024-Word by 4-Bit LSI Static RAM Ao — 5 I4 — I/O t Features: A| — 6 I3 — 1 / 0 2 7 I2 - I / O 3 • Fully static operation ■ In d u s try s ta n d a rd 1024 x 4 p in o u t (sam e as p in o u ts fo r 6514, 2114,

4464 ram

Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Contextual Info: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

6508 RAM

Abstract: 1m x 8 CMOS RAM
Contextual Info: PAGE LOW VOLTAGE DATA RETENTION . 2-2 INDUSTRY CMOS RAM CROSS R EFEREN CE. 2-3 1K CMOS RAM DATA SHEETS