Untitled
Abstract: No abstract text available
Text: Surface Mounting EMI Supression Filters Type SLT/P/-/SM3 TYPIC A L IN SER TIO N LOSS dB (50 ohm sys. shielded housing) TYPE No. FEATURES • • • • 1MHz 10MHz 100M Hz 1GHz 10G Hz S LT/P /1500/S M 3 2 16 53 65 65 S LT/P /22000/S M 3 12 48 65 65 65 unique surface mounting pi- filter
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/1500/S
/22000/S
10MHz
10GHz
/150O
SLW/22000/SM3
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PT-S501
Abstract: powertech
Text: “BIG IDEAS IN 200 AM PERES F T -6501 P T -65 0 2 S ILICO N IMPINI T R A N S IS T O R S MAXIMUM RATINGS PT-6501 PT-6502 80V 100V 60V 80V 10V 10V 200A 200A 100A 100 A 350W 350W 200W 200W -65 to 200° C -65 to 200°C -65 to 200°C -65 to 200° C SYMBOL Collector-Base Voltage
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PT-6501
O-114
PT-6502
O-114
300usec.
PT-S501
powertech
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2N1163
Abstract: 2N1165 2N1167 2N2553 2N2552 2N2669 2N2556 2N1163A A6540 2N1167A
Text: germanium power transistors PNP TO-41 = 10 to 50A h fE @ Ic / V c e V c e o s u s V ebo Type# (Volts) (Volts) 2N1163 2N1163A 2N1165 2N1165A 2N1167 2N1167A 25 25 35 40 45 50 20 25 25 40 30 50 (Min-Max @ A/V) 15-65@25/l 15-65 25/l 15-65@25/l 15-65®25/l
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2N1163
2N1163A
2N1165
2N1165A
2N1167
2N1167A
2N1042
2N1043
2N1044
2N2553
2N2552
2N2669
2N2556
A6540
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ICE3B1565J
Abstract: ICE3B0365J INFINEON CoolSET F2 1.1
Text: D a ta s h e e t, V er s io n 2 .8 , 2 3 A u g 20 1 2 CoolSET -F3R J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l
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ICE3Bxx65J
ICE3B1565J
ICE3B0365J INFINEON
CoolSET F2 1.1
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ICE3BR2065
Abstract: ICE3B0365J ice3bxx65j ICE3B1565J ICE3BR2065J 8 pin ic lm 745 ICE3Bxx65J Off-Line SMPS Current Mode Controller ice3b0565j ycap
Text: D a t as h ee t , V e rs io n 2 . 7, 9 M ay 20 1 2 CoolSET -F3R J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l
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ICE3Bxx65J
ICE3BR2065
ICE3B0365J
ICE3B1565J
ICE3BR2065J
8 pin ic lm 745
ICE3Bxx65J Off-Line SMPS Current Mode Controller
ice3b0565j
ycap
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Untitled
Abstract: No abstract text available
Text: D a t as he e t , V e rs io n 2 . 9, 25 M a r 20 1 3 CoolSET -F3 J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l
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ICE3Bxx65J
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spark gap 600v
Abstract: ice3b0365j ice3b0565j
Text: D a t as he e t , V e rs io n 2 . 9, 25 M a r 20 1 3 CoolSET -F3 J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l
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ICE3Bxx65J
spark gap 600v
ice3b0365j
ice3b0565j
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tq-60
Abstract: No abstract text available
Text: xemitron semiconductors SemitronicsCorp. m discrete devices 4 0 ^ 5 4 1 , DDDQSTl 7 I r - 3 1 'ô l s ilic o n tr a n s is to rs I N T E X / SEMITRONICS CORP 27E D yH F/VH F power transistors Pwar Out e e P|E MHz (W) e v CE 65 65 65 65 40 40 40 40 4.0 4.0
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2N3563
W3632
2N37S3
2N9552N955A
2N963
2N964A
-2N96S'
I2N374
2N994
2N2482;
tq-60
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UZ1084L-3.3V
Abstract: UZ1084-3.3V ET5201C-3.3V LM117-3.3V 2N1887 2n3886 2n388b 2n3035 2R2505 CX9162B-3.3v
Text: jcmitronicr discrete devices SEMICONDUCTORS Semitronics Corp. high current silicon controlled rectifiers TO -83 V *" 110 A m p e re s @ Tc Noted TV« Tc lor RATED CURRENT RRV and VBO 1 CYCLE CURRENT SURGE PEAK AMPS @ T j <°C) 50 100 150 200 250 65 65 65
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2N1792'
2N1793
2N17S5
ZN1780
150mA,
150mA
2N3886
UZ1084L-3.3V
UZ1084-3.3V
ET5201C-3.3V
LM117-3.3V
2N1887
2n388b
2n3035
2R2505
CX9162B-3.3v
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Untitled
Abstract: No abstract text available
Text: AR S 5022 THRU AR(S)5039 DACO SEMICONDUCTOR CO., LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 50A Features 50Amp BUTTON DIODE High Surge Capability High Current Capability Low leakage BUTTON-AR Maximum Ratings D Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175
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50Amp
100mA
WIDTH-300
10/1000usec
100us
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ZP500
Abstract: ZP3000 zp1000 ZP600 ZP300
Text: Power S em icon du ctor Devices General Rectifier D iodes—Disc Type Model ZP300/32 ZP400/24 ZP500/32 ZP600/20 ZP500/65 ZP600/50 ZP800/40 ZP1000/30 ZP2000/06 ZP2000/30 ZP500/65 ZP1000/50 ZP2000/30 ZP3000/20 ZP4000/06 ZP4000/20 ZP 1000/65 ZP2000/50 ZP4000/40
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105T3
ZP300/32
ZP400/24
ZP500/32
ZP600/20
ZP500/65
ZP600/50
ZP800/40
ZP1000/30
ZP2000/06
ZP500
ZP3000
zp1000
ZP600
ZP300
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plessey sp
Abstract: No abstract text available
Text: PLESSEY 12E S EMI CONDUCTORS » 7520513 0010350 5 A PLESSEY W S e m ic o n d u c t o r s . SP8718AC 520MHz + 64/65 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B TheSP8718 -i-64/65 is a 50mW programmable divider with a maximum specified operating frequency of 520MHz over
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SP8718AC
520MHz
MIL-STD-883C
TheSP8718
-i-64/65
520MHz
8718AC
T-90-20
20-PIN
plessey sp
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Magnum Microwave mixer
Abstract: magnum microwave
Text: MAGNUM MICROWAVE CÔRP h'i M13T L: R: I: De | s 7SS73D ÛGD0G2S DOUBLE BALANCED MIXER .01— 65 MHz .01— 65 MHz DC— 65 MHz LOW CONVERSION LOSS HIGH ISOLATION MINIATURE TO-8 HERMETIC PACKAGE GUARANTEED SPECIFICATIONS' 1 PARAMETER MIN. TYP. RF LO IF 10 K H z -65 MHz
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7SS73D
77-Of
50MHz
Magnum Microwave mixer
magnum microwave
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CTG-34S
Abstract: CTG-32S CTG-33S C120H04Q C120H05Q ctg23s CTG-31S CTG-22S 273B C60P40FE
Text: - * » £ C60P40FE C80H03Q C80H04Q C80H05Q C80H06Q tt £ Pr s m Vr s m kf (V) I # £ Ì H Vr Vj Io (V) (V) (V) (A) V 440 35 45 55 65 400 30 40 50 60 60 80 80 80 80 35 45 55 65 35 30 40 50 60 30 120 120 120 120 120 45 55 65 35 35 40 50 60 30 30 120 120
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C60P40FE
c80h03q
c80h04q
c80h05q
cs0h06q
ctg-31r
CTG-31S
ctg-32r
ctg-32s
ctg-33r
CTG-34S
CTG-33S
C120H04Q
C120H05Q
ctg23s
CTG-22S
273B
C60P40FE
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RER175
Abstract: ebm-papst RER175DC
Text: RER175DC Series ø Motorized Imp eller 175 x 69mm - New S-Force Models W lb gt. s 48 36 to 65 42 tbd 65 Ball Leads 3400 1.71 576.8 48 36 to 72 166 8.5 65 Ball Leads 5400 1.71 at Fe Be e Cu rv ur es S (R pee PM d ) B Ty eari p e ng M Te ax m Am p C b. 353.0
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RER175DC
RER175-42/18/2TDP
RER175-42/18/2TDMLP
RER175
ebm-papst
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Untitled
Abstract: No abstract text available
Text: SMT : Page 83 2m m FL SPECIFICATIONS Materials: Mates with: C L T S O T. S O W , GSOT. T L E , S M M , M M S , TG S O Insulator Material: Black Liquid Crystal Polymer Terminal Material: Phosphor Bronze Operating Temp Range: -65 C to +135°C with Tin: -65 C to +125 ;C with Gold
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1-800-SAMTEC-9
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SOT-23 marking AFE
Abstract: 65 b S
Text: NPN Silicon AF Transistors • • • • B CW 65 B CW 66 For general AF applications High cu rre n t gain Lo w co lle c to r-e m itte r saturation voltage C om plem entary types'. BCW 67, BCW 68 PNP Type □ BCW 65 A □ BCW 65 B S BCW 65 C Marking EA
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zener diode 1N4756a
Abstract: 1N4756A
Text: 1N4756A asii SILICON ZENER DIODE DESCRIPTION: The 1N4756A is a Silicon Regulator Diode for General Purpose Voltage Control Applications. MAXIMUM RATINGS If 200 mA Vz 47 V Pd i s s 1.0 W @ Ta $ 50 °C Tj -65 0C to +200 0C Ts t g -65 0C to +200 0C m in im u m
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1N4756A
1N4756A
zener diode 1N4756a
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Untitled
Abstract: No abstract text available
Text: _u _ REV. DCR NATURE DE LA MODIFICATION DATE VISA SCALE 2,500 Force d’enfoncement m CODE PRODUIT DESIGNATION TRAITEMENT Course mm 65 A00 303 FP LFS M D P S LFS Ag 0,20'qq2 mm 2,4±0,6 N 65 A00 304 FP LFS M D P G LFS Au 0,20’°q2 mm 2,4±0,6 N 65 A00 503 FP LFS
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Untitled
Abstract: No abstract text available
Text: AR S 3522 THRU AR(S)3539 DACO SEMICONDUCTOR CO., LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 35A Features 35Amp BUTTON DIODE High Surge Capability High Current Capability Low leakage BUTTON-AR Maximum Ratings D Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175
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35Amp
100mA
WIDTH-300
10/1000usec
100us
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e NPN PNP M P S 6 5 2 0 , MPS6521 M P S 65 2 3 C o lle c to r-B a s e V o lta g e Unit 25 25 V dc v CB0 40 M P S 65 2 0, M P S 6521 M P S 65 2 3 25 Vebo 4.0 V dc C o lle c to r C u rre n t — C o n tin u o u s
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MPS6521
MPS6520
MPS6521*
MPS6523
O-226AA)
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4511 gm
Abstract: TTC 5200 ir 8707 nte 6250 76722 8840 TIC 1260 stoneridge se 5000 x4202 STR G 6352 SG 3425 N
Text: ülmEE Distributors W I R E L E S S 4 fiC Europe Austria SPO ERL E ELE C TR O N IC Am K ehlerpark 1 6850 D ornbirn Tel: 43 5572 38 65 0 0 -0 Fax: 43 5572 38 65 0 0 -9 0 A rrow D enm ark A/S S m edeholm 13 A 2730 Herlev Tel: 45 44 50 82 00 Fax: 45 44 50 82 03
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Untitled
Abstract: No abstract text available
Text: 67C4502-35/50/65/80 Deep First-in First-out FIFO 1024x9 CMOS Memory a s DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle tim es of 45/65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Retransmit capability Expandable in both width andjtepth
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67C4502-35/50/65/80
1024x9
67C4502
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Untitled
Abstract: No abstract text available
Text: F - 1 9 9 '1 m sâm lêc c : RMINAL S Specifications: TS, TD Q l Insulater Material: s Black Glass Filled Polyester Termini I Material: Brass, e<cept Style G Is Phosphor Bronze Operating Temp Range: -65°C to+125 'C with Gold -65°C to + 105'C with Tin Dielectric Withstanding
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