siemens rs 1002
Abstract: 211 power Triode 55 kw V221 Q81-X901 Q81-X168 siemens tube rs tube triode push-pull CLASS C FUSE SIEMENS 1000 97 0
Text: - Transmitter Triode RS 2021 V YD 1002 For frequencies up to 70 MHz Ordering code Q53-X2021 Vapor-cooled triode with coaxial grid lead-through, suitable for use as RF amplifier, oscillator and
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C-Archiv-DB/GG-RO-engl/DB-Senderoehren-96
BNR-B442-P4213-X-X-
Q53-X2021
Zub31V
siemens rs 1002
211 power Triode
55 kw
V221
Q81-X901
Q81-X168
siemens tube
rs tube
triode push-pull CLASS C
FUSE SIEMENS 1000 97 0
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qpsk transmitter
Abstract: Datasheets for BB132 varicap SO32 TDA8050A qpsk transmitter block diagram FCE448 siemens infrared preamplifier philips rf manual 4 shift QPSK
Text: INTEGRATED CIRCUITS DATA SHEET TDA8050A QPSK transmitter Product specification File under Integrated Circuits, IC02 1999 Nov 05 Philips Semiconductors Product specification QPSK transmitter TDA8050A FEATURES Two PLLs are incorporated, the first PLL includes:
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TDA8050A
12-bit
545004/25/01/pp28
qpsk transmitter
Datasheets for BB132 varicap
SO32
TDA8050A
qpsk transmitter block diagram
FCE448
siemens infrared preamplifier
philips rf manual
4 shift QPSK
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DS90CF363
Abstract: DS90CF363MTD MTD48
Text: DS90CF363 +3.3V LVDS Transmitter 18-Bit Flat Panel Display FPD Link— 65 MHz General Description Features The DS90CF363 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in
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DS90CF363
18-Bit
DS90CF363
siz959
DS90CF363MTD
MTD48
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DS90CF363
Abstract: DS90CF363MTD MTD48 65 MHZ circuit transmitter
Text: DS90CF363 DS90CF363 +3.3V LVDS Transmitter 18-Bit Flat Panel Display FPD Link— 65 MHz General Description Features The DS90CF363 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in
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DS90CF363
18-Bit
DS90CF363
and959
DS90CF363MTD
MTD48
65 MHZ circuit transmitter
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DS90CF383
Abstract: DS90CF383MTD MTD56
Text: DS90CF383 DS90CF383 +3.3V LVDS Transmitter 24-Bit Flat Panel Display FPD Link—65 MHz General Description Features The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link. Every cycle
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DS90CF383
24-Bit
Link--65
DS90CF383
DS90CF383MTD
MTD56
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FX1115
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.
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BLX68
OT-48/3.
7Z61766
7Z61769
bb53131
FX1115
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DS90CF383
Abstract: DS90CF383MTD MTD56
Text: DS90CF383 DS90CF383 +3.3V LVDS Transmitter 24-Bit Flat Panel Display FPD Link— 65 MHz General Description Features The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link. Every cycle
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DS90CF383
24-Bit
DS90CF383
ca959
DS90CF383MTD
MTD56
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DS90CF383
Abstract: DS90CF383MTD MTD56
Text: DS90CF383 +3.3V LVDS Transmitter 24-Bit Flat Panel Display FPD Link— 65 MHz General Description Features The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link. Every cycle
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DS90CF383
24-Bit
DS90CF383
DS90CF383MTD
MTD56
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DS90CF363
Abstract: DS90CF363MTD MTD48 LVDS display 40 pin
Text: DS90CF363 DS90CF363 +3.3V LVDS Transmitter 18-Bit Flat Panel Display FPD Link—65 MHz General Description Features The DS90CF363 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in
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DS90CF363
18-Bit
Link--65
DS90CF363
DS90CF363MTD
MTD48
LVDS display 40 pin
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLV21
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Untitled
Abstract: No abstract text available
Text: OLE D N AMER PHILIPS/DISCRETE 86D 01766 D 7 ' ^ »• _ _ ——-bbS3T31 DD140DN 1 I o -s r J l A BLX67 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,8 V ,
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----bbS3T31
DD140DN
BLX67
175MHz
7Z65143
bb53T31
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GRM39
Abstract: PDC800M PC8130TA
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8130TA, µPC8131TA –15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.
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PC8130TA,
PC8131TA
PC8130TA
PC8131TA
PC8119T
PC8120T
GRM39
PDC800M
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DS90CF383
Abstract: DS90CF383MTD MTD56
Text: General Description Features The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS Low Voltage Differential Signaling data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link. Every cycle
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DS90CF383
ds100033
DS90CF383MTD
MTD56
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DS90C363
Abstract: DS90C363MTD DS90CF364 MTD48
Text: DS90C363/DS90CF364 +3.3V Programmable LVDS Transmitter 18-Bit Flat Panel Display FPD Link—65 MHz +3.3V LVDS Receiver 18-Bit Flat Panel Display (FPD) Link—65 MHz General Description Features The DS90C363 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling)
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DS90C363/DS90CF364
18-Bit
Link--65
DS90C363
DS90CF364
DS90C363MTD
MTD48
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Untitled
Abstract: No abstract text available
Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
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Untitled
Abstract: No abstract text available
Text: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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002flT33
BLV20
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DS90CF363
Abstract: DS90CF363MTD MTD48
Text: General Description Features The DS90CF363 transmitter converts 21 bits of CMOS/TTL data into three LVDS Low Voltage Differential Signaling data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fourth LVDS link. Every
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DS90CF363
ds100032
DS90CF363MTD
MTD48
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BLY88C
Abstract: No abstract text available
Text: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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BLY88U/01
BLY88C
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BLY94
Abstract: philips bly94
Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002T75fl
BLY94
7Z67S60
BLY94
philips bly94
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RIL3N
Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Text: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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711002b
00b3bll
BLY91C
OT-120.
RIL3N
transistor 1107
transistor tt 2222
W045
TT 2222
BLY91C
j0718
RF POWER TRANSISTOR NPN vhf
transistor L6
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transistor tt 2222
Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
Text: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLV20
OT-123.
711002b
7z68947
7z68946
7z68948
transistor tt 2222
BLV20
TT 2222
RF POWER TRANSISTOR NPN vhf
j0718
2222 123 capacitor philips
ic TT 2222
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50 inch lcd panel lvds
Abstract: rgb 18 bit to lvds panels Quad LVDS interface pin connection lvds cable C1996 DS90CF563 DS90CF563MTD DS90CF564 DS90CF564MTD EIA-644
Text: February 1996 DS90CF563 DS90CF564 LVDS 18-Bit Color Flat Panel Display FPD Link 65 MHz General Description The DS90CF563 transmitter converts 21 bits of CMOS TTL data into three LVDS (Low Voltage Differential Signalling) data streams A phase-locked transmit clock is transmitted
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DS90CF563
DS90CF564
18-Bit
DS90CF564
50 inch lcd panel lvds
rgb 18 bit to lvds
panels Quad LVDS interface
pin connection lvds cable
C1996
DS90CF563MTD
DS90CF564MTD
EIA-644
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transistor L6
Abstract: BLY92C BLY92 PL 431 transistor
Text: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
OT-120.
7z68949
transistor L6
BLY92C
BLY92
PL 431 transistor
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Untitled
Abstract: No abstract text available
Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
PU10542EJ02V0DS
IR260
WS260
HS350
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