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    64N25P Search Results

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    64N25P Price and Stock

    Littelfuse Inc IXTT64N25P

    MOSFET N-CH 250V 64A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT64N25P Tube 300
    • 1 -
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    • 1000 $4.62673
    • 10000 $4.62673
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    Newark IXTT64N25P Bulk 300
    • 1 -
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    • 1000 $4.85
    • 10000 $4.85
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    Littelfuse Inc IXTQ64N25P

    MOSFET N-CH 250V 64A TO3P
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    DigiKey IXTQ64N25P Tube 300
    • 1 -
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    • 1000 $3.49887
    • 10000 $3.49887
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    Newark IXTQ64N25P Bulk 300
    • 1 -
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    • 100 $4.99
    • 1000 $4.01
    • 10000 $3.73
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    IXYS Corporation IXTQ64N25P

    MOSFETs 64 Amps 250V 0.049 Rds
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    Mouser Electronics IXTQ64N25P 298
    • 1 $6.73
    • 10 $5.77
    • 100 $4.9
    • 1000 $3.49
    • 10000 $3.49
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    TTI IXTQ64N25P Tube 300
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    • 1000 $3.5
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    New Advantage Corporation IXTQ64N25P 2,240 1
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    • 100 $8.23
    • 1000 $8.23
    • 10000 $7.68
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    IXYS Corporation IXTT64N25P

    MOSFETs 64 Amps 250V 0.049 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTT64N25P
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    • 1000 $5.99
    • 10000 $5.99
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    TTI IXTT64N25P Tube 300
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    • 1000 $4.8
    • 10000 $4.8
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    TME IXTT64N25P 1
    • 1 $7.18
    • 10 $5.71
    • 100 $5.13
    • 1000 $5.13
    • 10000 $5.13
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    Component Electronics, Inc IXTT64N25P 8
    • 1 $3.46
    • 10 $3.46
    • 100 $2.6
    • 1000 $2.25
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    IXYS Integrated Circuits Division IXTQ64N25P

    MOSFET DIS.64A 250V N-CH TO3P POLARHT THT
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    Ozdisan Elektronik IXTQ64N25P 2,740
    • 1 $6.37197
    • 10 $6.37197
    • 100 $5.7927
    • 1000 $5.7927
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    Find more 64N25P price and stock on Findchips.com

    64N25P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS on 250 V 64 A Ω 49 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGSS VGSM Continuous


    Original     		PDF 64N25P O-268

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 64N25P IXTT 64N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 64 A Ω = 48 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		PDF 64N25P O-268 728B1 123B1 728B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS on 250 V 64 A Ω 49 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGSS VGSM Continuous


    Original     		PDF 64N25P O-268

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP