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    64MB SAMSUNG SDRAM Search Results

    64MB SAMSUNG SDRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RMWV6416AGSD-5S2#AA0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation
    RMWV6416AGSA-5S2#AA0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation
    RMWV6416AGSA-5S2#KA0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation
    RMWV6416AGBG-5S2#AC0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation
    RMWV6416AGSD-5S2#HA0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation

    64MB SAMSUNG SDRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S643232H

    Abstract: K4S643232
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History


    Original     		PDF A10/AP K4S643232H K4S643232

    tcl 14175

    Abstract: 8MB SDRAM K4S641632H-TC K4S640432H-TC K4S640832H K4S641632H
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF A10/AP tcl 14175 8MB SDRAM K4S641632H-TC K4S640432H-TC K4S640832H K4S641632H

    K4S640432H-TC

    Abstract: K4S640832H K4S641632H K4S641632H-TC
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.3 October 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 October 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF A10/AP K4S640432H-TC K4S640832H K4S641632H K4S641632H-TC

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.0 September 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 September 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 16Bit A10/AP

    K4S643232H

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.4 August 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 August 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History


    Original     		PDF A10/AP K4S643232H

    K4S641632H

    Abstract: K4S641632H-TC K4S640432H-TC K4S640832H
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.5 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 February 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF A10/AP K4S641632H K4S641632H-TC K4S640432H-TC K4S640832H

    K4S641632H

    Abstract: K4S640432H-TC K4S640832H K4S641632H-TC tcl 14175 8Mb samsung SDRAM
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.8 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.8 August 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF A10/AP K4S641632H K4S640432H-TC K4S640832H K4S641632H-TC tcl 14175 8Mb samsung SDRAM

    tcl 14175

    Abstract: K4S640832H K4S641632H 1M x 16Bit x 4 Banks Synchronous DRAM
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16)


    Original     		PDF 16Bit A10/AP tcl 14175 K4S640832H K4S641632H 1M x 16Bit x 4 Banks Synchronous DRAM

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.2 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May 2004 SDRAM 64Mb H-die (x4, x8, x16)


    Original     		PDF 16Bit A10/AP

    K4S281632F

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004 64MB, 128MB Unbuffered SODIMM


    Original     		PDF 128MB 144pin 64-bit 8Mx16 K4S281632F K4S281632F

    K4S643232H-UC

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 86 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 August 2004 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.1 August 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM


    Original     		PDF 32Bit A10/AP K4S643232H-UC

    K4S643232H

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 November 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 November. 2003 SDRAM 64Mb H-die (x32)


    Original     		PDF 32bit A10/AP K4S643232H

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.2 December 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.2 December. 2003 SDRAM 64Mb H-die (x32)


    Original     		PDF 32bit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 December 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.1 December. 2003 SDRAM 64Mb H-die (x32)


    Original     		PDF 32bit A10/AP

    K4S281632F

    Abstract: m464s1724f K4S281632
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 128MB 144pin 64-bit M464S0924FT59 8Mx16 K4S281632F m464s1724f K4S281632

    Untitled

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004


    Original     		PDF 128MB 144pin 64-bit M464S0924FTS-C M464S1724FTS-C

    K4S281632F

    Abstract: M366S0924FTS-C7A M366S1723FTS-C7A M366S1723FTU-C7A M366S3323FTS-C7A M366S3323FTU-C7A M374S1723FTS-C7A M374S1723FTU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb F-die 62/72-bit Non ECC/ECC Revision 1.3 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 May 2004


    Original     		PDF 128MB, 256MB 168pin 128Mb 62/72-bit K4S281632F M366S0924FTS-C7A M366S1723FTS-C7A M366S1723FTU-C7A M366S3323FTS-C7A M366S3323FTU-C7A M374S1723FTS-C7A M374S1723FTU-C7A

    K4S643232H

    Abstract: No abstract text available
    Text: Preliminary SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 September 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.2 Septermber. 2003 Preliminary


    Original     		PDF 32bit A10/AP K4S643232H

    M366S0924FTS-C7A

    Abstract: M366S1723FTS-C7A M366S1723FTU-C7A M366S3323FTS-C7A M366S3323FTU-C7A M374S1723FTS-C7A M374S1723FTU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb F-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 128MB, 256MB 168pin 128Mb 62/72-bit M366S0924FTS-C7A M366S1723FTS-C7A M366S1723FTU-C7A M366S3323FTS-C7A M366S3323FTU-C7A M374S1723FTS-C7A M374S1723FTU-C7A

    K4S641632K

    Abstract: K4S640832K K4S641632
    Text: K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K4S640832K K4S641632K A10/AP K4S641632K K4S640832K K4S641632

    tcl 14175

    Abstract: K4S641632N
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP tcl 14175 K4S641632N

    k4s641632n

    Abstract: No abstract text available
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n

    K4S641632N

    Abstract: k4s641632n-li K4S641632
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP K4S641632N k4s641632n-li K4S641632

    k4s641632n

    Abstract: k4s641632n-li tcl 14175
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP k4s641632n k4s641632n-li tcl 14175