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    64GHZ Price and Stock

    TE Connectivity L9000367-01

    Antennas ANTENNA GNSS FPC SH L1 13X13 5
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    TTI L9000367-01 Each 1,000
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    TE Connectivity L000519-01

    Antennas ANTENNA GNSS FPC SH L1/L5 25X2
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    TTI L000519-01 Each 1,000
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    TE Connectivity L000523-01

    Antennas ANTENNA GNSS FPC SH L1/L5 25X2
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    TTI L000523-01 Each 1,000
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    TE Connectivity L000518-01

    Antennas ANTENNA GNSS FPC SH L1/L5 25X2
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    TTI L000518-01 Each 1,000
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    TE Connectivity L000517-01

    Antennas ANTENNA GNSS FPC SH L1/L5 25X2
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    TTI L000517-01 Each 1,000
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    64GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    200G

    Abstract: WDM Filter
    Text: D 200GHz WDM Filter Components for OADM Features • 64GHz clear channel passband • ITU and custom wavelengths Bookham narrowband filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best banded filter


    Original     		200GHz 64GHz 200G WDM Filter PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM5715X 60GHz Power Amplifier FEATURES •High Output Power; P1dB = 16 dBm Typ. @ f = 60 GHz •High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5715X is a power amplifier MMIC designed for applications


    Original     		FMM5715X 60GHz FMM5715X 1906B, PDF

    60Ghz

    Abstract: FMM5715X 544 mmic 60GHz transistor 7400 chip 112 amp 827 578 ED-4701 power amplifier mmic fmm5715
    Text: FMM5715X 60GHz Power Amplifier FEATURES •High Output Power; P1dB = 16 dBm Typ. @ f = 60 GHz •High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5715X is a power amplifier MMIC designed for applications


    Original     		FMM5715X 60GHz FMM5715X 1906B, 544 mmic 60GHz transistor 7400 chip 112 amp 827 578 ED-4701 power amplifier mmic fmm5715 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A P R E L » 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The


    OCR Scan     		MGFC36V5964A MGFC36V5964A 96CTYP) 45dBc 10MHz' PDF