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    6427 TRANSISTOR Search Results

    6427 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6427 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6427 darlington transistor

    Abstract: Q68000-A8320
    Text: NPN Silicon Darlington Transistor SMBT 6427 For general amplifier applications ● High collector current ● High current gain ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E C Maximum Ratings


    Original     		PDF Q68000-A8320 OT-23 6427 darlington transistor Q68000-A8320

    a42e

    Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
    Text: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


    Original     		PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 a42e IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn

    U15 transformer

    Abstract: horizontal deflection circuit Horizontal-Deflection Output transformer CD 7640 1200 w 45 khz transformer IC 3263 datasheet 6 pins IC cbe CU15/35 philips 1n4148 1N4148
    Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up


    Original     		PDF CU15/35 BU4525AF/AX U15 transformer horizontal deflection circuit Horizontal-Deflection Output transformer CD 7640 1200 w 45 khz transformer IC 3263 datasheet 6 pins IC cbe philips 1n4148 1N4148

    CD 7640

    Abstract: U15 transformer horizontal deflection circuit nf 817 1N4148 BC337A BY359X-1500S BYV28-50 BZX79C6V8 philips BC
    Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up


    Original     		PDF CU15/35 BU4525AF/AX CD 7640 U15 transformer horizontal deflection circuit nf 817 1N4148 BC337A BY359X-1500S BYV28-50 BZX79C6V8 philips BC

    DM74LS365A

    Abstract: DM74LS365AN 54LS365A 54LS365ADMQB 54LS365AFMQB 54LS365ALMQB DM54LS365A DM54LS365AJ DM54LS365AW DM74LS265AM
    Text: 54LS365A DM54LS365A DM74LS365A Hex TRI-STATE Buffers General Description This device contains six independent gates each of which performs a non-inverting buffer function The outputs have the TRI-STATE feature When enabled the outputs exhibit the low impedance characteristics of a standard LS output


    Original     		PDF 54LS365A DM54LS365A DM74LS365A DM74LS365A DM74LS365AN 54LS365ADMQB 54LS365AFMQB 54LS365ALMQB DM54LS365AJ DM54LS365AW DM74LS265AM

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors’ new SiliconMAXTM power MOSFET range - a next generation development of the company’s advanced TrenchMOS technology - brings the benefits of ultra-low RDS on and high-speed switching to applications requiring transistors with voltage


    Original     		PDF SCS63

    AN 6752

    Abstract: msc925 AN 6752 japan
    Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET NIJ004 Double Polysilicon – the technology behind silicon MMICs, RF transistors & PA modules Higher frequencies and greater levels of integration for mobile communications emitter base


    Original     		PDF NIJ004 SCS60 AN 6752 msc925 AN 6752 japan

    2108 npn transistor

    Abstract: TRANSISTOR D 471 2PC945P
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING


    Original     		PDF M3D186 2PC945 2PA733. MAM259 115002/03/pp8 2108 npn transistor TRANSISTOR D 471 2PC945P

    bc516

    Abstract: bc517 BC517 data sheet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 BC516 BC517. MAM303 SCA63 115002/00/03/pp8 bc516 bc517 BC517 data sheet

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES


    Original     		PDF M3D187 2PD1820A SC-70; OT323 2PB1219A. SCA63 115002/00/02/pp8

    2108 npn transistor

    Abstract: 2PC1815 TRANSISTOR D 471
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 28 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 PINNING FEATURES


    Original     		PDF M3D186 2PC1815 2PA1015. MAM259 115002/03/pp8 2108 npn transistor 2PC1815 TRANSISTOR D 471

    bc517

    Abstract: StR 40000 or transistor transistor BC517
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 BC517 BC516. MAM302 SCA63 115002/00/04/pp8 bc517 StR 40000 or transistor transistor BC517

    marking code IC .ztz

    Abstract: ZtZ MARKING PUMX1 marking ztz sot363
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 14 Philips Semiconductors Preliminary specification NPN general purpose double transistor


    Original     		PDF MBD128 SC-88 SCA63 115002/00/03/pp8 marking code IC .ztz ZtZ MARKING PUMX1 marking ztz sot363

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E


    OCR Scan     		PDF Q68000-A8320 OT-23 aE35bD5 D1EE571 235bD5

    Untitled

    Abstract: No abstract text available
    Text: BEE D • ö53b32Q QQ175SS b WÊSIP NPN Silicon Darlington Transistor SMBT 6427 _ SIEMENS/ SPCLi SEMICONDS T-Z'l -X*? _ • For general amplifier applications • High collector current • High current gain Type Marking Ordering code for versions in bulk


    OCR Scan     		PDF 53b32Q QQ175SS 23b320

    2SK784

    Abstract: No abstract text available
    Text: 6427 52 5 N E C ELECTRON ICS INC 98D 18928 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfl • t427S2S 3 I _ _ _ 2SK784 DESCRIPTION The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEA TU R ES


    OCR Scan     		PDF t427sas 2SK784 2SK784

    Untitled

    Abstract: No abstract text available
    Text: Central' C M P T 6427 Sem iconductor Corp. NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT6427 type is a NPN Silicon Darlington Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications


    OCR Scan     		PDF CMPT6427 OT-23 500mA, 500mA 100MHz 100kQ,

    2SJ122

    Abstract: 2SJ128-Z 3919
    Text: 642 75 25 N E C N EC ELE CT RONIC S INC 98D 19027 ELECTRONICS INC ~ iß D T'-Jr-/? DE | b427555 001^057 3 y / lELETRGN DEVICE MOS FIELD EFFECT POWER TRANSISTOR . / Ä ^ ^ ^ Ä _ 2 S J 1 2 S - Z FAST SWITCHING P-CHANNE1 SILICON POW ER MOS FzT INDUSTRIAL USE


    OCR Scan     		PDF b4B755S 0DnG27 2SJ128-Z T-39-19 12SJ128-2 2SJ122 2SJ128-Z 3919

    transistor 2222a

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a

    MPS3708

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TY P E NO. FAM ILY LEAD v CBO v CEO h FE v EBO >CBO 48 v CBO « v CE @ lc TO-92-18R V CE(S; VT) 'C C „b *T NF ‘ off CO D E (V ) (V ) •TO-92-18R MIN *V C ES MIN (V ) (nA) MIN *'C E V (V ) (V )


    OCR Scan     		PDF O-92-18R O-92-18R 2N5812 2N5813 2N5816 2N5817 2N5818 MPS3415 MPS3702 MPS3704 MPS3708 2N5819 2N5822 2N5823 2N5830

    2SK736

    Abstract: No abstract text available
    Text: R á 7 7 525 N E C E C ELECTRONICS INC ELE CT RO NI CS INC _ ~Tfl D T-3^ - 98D 18908 »F§m57S2S □□IflTOfl ñ N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR 2SK736 D ESCRIPTIO N The 2SK736 is N-Channel MOS Field Effect Power Transistor PA C KAG E D IM EN SIO N S


    OCR Scan     		PDF 2SK736 Li427SE5 tdiof11â

    transistor ld3

    Abstract: 2SK703 T500
    Text: N E C ELECTRONICS INC Tfl DE | t,4E7525 OQlñññM T |~884 D T - 3 ?• : '¡ ^ 7 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK703 D E S C R IP T IO N The 2 S K 7 0 3 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, m otor and lamp driver.


    OCR Scan     		PDF b427555 2SK703 2SK703 T-39-11 transistor ld3 T500

    STR 6707

    Abstract: bf872
    Text: DISCRETE SEMICONDUCTORS BF872 PNP high-voltage transistor 1999 Apr 21 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF872 FEATURES • Low feedback capacitance.


    OCR Scan     		PDF BF872 aTO-202 BF871. BF872 O-202) SCA63 5002/00/04/pp8 STR 6707

    philips e3

    Abstract: BP317 BU506 BU506D BU508D
    Text: DISCRETE SEMICONDUCTORS Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.


    OCR Scan     		PDF BU506; BU506D SCA55 philips e3 BP317 BU506 BU506D BU508D