638 TRANSISTOR Search Results

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc640

Abstract: Diode bc640 BC636 BC638
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

BC635 ECB

Abstract: BC638
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

2SD2422

Abstract: BC807-25T116 2SB1043 2sd2422 Datasheet DTA123JSATP 2SD2574 MMST8598T146 2SD1960 2sc5072 2SA1886
Contextual Info: Transistors Maintenance Product List 638 Transistors FMaintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2

BC635

Abstract: BC636 BC638 BC640
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage

transistor C639

Abstract: transistor C635 c639 transistor C639 w
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635

bc636

Abstract: BC640-16 BC638-16 Plastic Encapsulate Transistors Diode bc640 transistor bC640 BC640 pnp bc636 transistor BC636-10 BC636-16
Contextual Info: BC636/638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE 3.5±0.2 4.55±0.2 14.3±0.2 4.5±0.2 Power Dissipation: PCM: 0.83 mW Tamb=25oC 0.43+0.08

CTN639

Abstract: CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

639 TRANSISTOR PNP

Abstract: bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage

BC639 collector

Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage Collector Emitter Voltage

Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :

bc736

Abstract: transistor C 639 W bc639 BC635 BC637
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage

L0050A

Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
Contextual Info: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z

BC635 TRANSISTOR E C B

Abstract: transistor C 639 W
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage at Rbe=1 Kohm Collector Emitter Voltage Collector Emitter Voltage

BC638

Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
Contextual Info: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80

Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage

bc638 motorola

Contextual Info: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80

Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc736

Abstract: bc635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

MCT2201

Abstract: Opto-isolator
Contextual Info: Issued November 1995 020-638 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is

NPN transistor ECB TO-92

Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc639

Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter