SMD DIODE 517
Abstract: crank sensor HAL621 marking code 4e SMD MARKING CODE TRANSISTOR 501 HAL629 HAL629UA-E SPGS0022-5-A3 Bipolar Static Induction Transistor
Text: MICRONAS Edition Feb. 5, 2001 6251-109-4E 6251-504-2DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts
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6251-109-4E
6251-504-2DS
HAL621,
HAL629
HAL62x
12this
SMD DIODE 517
crank sensor
HAL621
marking code 4e
SMD MARKING CODE TRANSISTOR 501
HAL629
HAL629UA-E
SPGS0022-5-A3
Bipolar Static Induction Transistor
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crank sensor
Abstract: No abstract text available
Text: MICRONAS Edition Feb. 3, 2000 6251-504-1DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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HAL621,
HAL629
6251-504-1DS
HAL62x
HAL621
crank sensor
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hall marking code A04
Abstract: No abstract text available
Text: MICRONAS Edition Feb. 3, 2000 6251-504-1DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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6251-504-1DS
HAL621,
HAL629
HAL62x
HAL621
hall marking code A04
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON [»m as'riiM oes BYW 98-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT . THE SPECIFICATIONS AND CURVES EN
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opto d213
Abstract: d213 opto MOCD213 T
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline Optoisolator MOCD213 Transistor Output [CTR > 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, In a surface
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MOCD213
opto d213
d213 opto
MOCD213 T
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IN5767
Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
Text: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT
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1N5719
1N5767
HPND-4165/66
HPND-4166.
IN5767
HP 5082-3081
HPND-4165
EN 4165
5082-3042
HPND-4166
IN5719
RS-296-D
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'JE ]> • bbS3T31 DDHbb37 =142 H A P X _ J BYM36 SERIES VERY FAST SOFT-RECOVERY AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use in switched-mode power supplies and high-frequency inverter circuits. In general, they are used
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bbS3T31
DDHbb37
BYM36
BYM36A
D02bb43
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Untitled
Abstract: No abstract text available
Text: BZD23 SERIES REGULATOR DIODES Glass passivated diodes in herm etically sealed axial leaded ID* glass envelopes. They are intended for use as voltage regulator and transient suppressor diodes in medium power regulation and transient suppression circuits. The series consists o f B Z D 2 3 -C 7 V 5 to B ZD -C 510 in the normalized E24 range.
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BZD23
OD-81
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET TZA3033 SDH/SONET STM1/OC3 transimpedance amplifier Objective specification File under Integrated Circuits, IC19 1998 Jul 08 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 FEATURES
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TZA3033
SA5223.
TZA3033T
TZA3033U
pan9352
TZA3033T/C2
TZA3033T/C3
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BYM36
Abstract: BYM36A BYM36B BYM36D MARKING AJ5
Text: N AMER PHILIPS/DISCRETE b'JE D • bbS3^31 00Hbb37 142 ■ APX 11 BYM36 SERIES VERY FAST SOFT-RECOVERY AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use in switched-mode power supplies and high-frequency inverter circuits. In general, they are used
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00Hbb37
BYM36
BYM36A
BYM36D;
BYM36B
BYM36D
MARKING AJ5
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922z
Abstract: 629-22CR4Z 22CR4Z 21CR4Z 921Z MARKING 921z 2cr4
Text: ISL6292 Data Sheet November 3, 2006 FN9105.7 Li-ion/Li Polymer Battery Charger Features The ISL6292 is an integrated single-cell Li-ion or Li-polymer battery charger capable of operating with an input voltage as low as 2.4V. This charger is designed to work with various
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ISL6292
FN9105
ISL6292
922z
629-22CR4Z
22CR4Z
21CR4Z
921Z
MARKING 921z
2cr4
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922z
Abstract: 629-22CR4Z 921Z qfn 5x5 thermal resistance 2CR3 qfn 3X3 land pattern 22CR4Z 21CR4Z ISL6292-1CR3-T ISL6292-1CR3Z
Text: ISL6292 Data Sheet November 14, 2006 FN9105.8 Li-ion/Li Polymer Battery Charger Features The ISL6292 is an integrated single-cell Li-ion or Li-polymer battery charger capable of operating with an input voltage as low as 2.4V. This charger is designed to work with various
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ISL6292
FN9105
ISL6292
922z
629-22CR4Z
921Z
qfn 5x5 thermal resistance
2CR3
qfn 3X3 land pattern
22CR4Z
21CR4Z
ISL6292-1CR3-T
ISL6292-1CR3Z
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NTHD4P02FT1G
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
otherwi18.
NTHD4P02FT1G
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Untitled
Abstract: No abstract text available
Text: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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BF991
S0T143
SQT103
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41A SOT-23
Abstract: No abstract text available
Text: PPJA87P03 30V P-Channel ENHANCEMENT MODE MOSFET 30 V Voltage 4A Current Features RDS ON , VGS@-4.5V,ID@-3A<87 mΩ RDS(ON), VGS@-10V,ID@-4.1A<55 mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance
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PPJA87P03
2002/95/EC
IEC61249
OT-23
MIL-STD-750,
2012-REV
41A SOT-23
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Untitled
Abstract: No abstract text available
Text: PPJA87P03 30V P-Channel ENHANCEMENT MODE MOSFET 30 V Voltage 4A Current Features RDS ON , VGS@-4.5V,ID@-3A<87 mΩ RDS(ON), VGS@-10V,ID@-4.1A<55 mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance
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PPJA87P03
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2012-REV
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BF991
Abstract: G2S-50
Text: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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02473cÃ
BF991
OT143
200MHz
SQT103
BF991
G2S-50
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free transistor bs 200
Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
Text: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.
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711008b
BF991
OT143
OT103
free transistor bs 200
marking BS mosfet
FET MARKING CODE
BF991
G2S-50
transistor BF991
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Untitled
Abstract: No abstract text available
Text: 'Corp. M I6626U S th ru 1N6631US ! Senta Ana 2830 S. Fairview Street, Santa Ana, CA 92704 714 979-8220 • (714) 557-5989 fa x Features • • • • • • • AXIAL AND SURFACE M OUNT CONFIGURATIONS HIGH VOLTAGE WITH ULTRA FAST RECOVERY TIME VERY LOW SWITCHING LOSS AT HIGH TEMPERATURE
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I6626U
1N6631US
MIL-S-19500/590
1IU6626
1N6626
1N6627
1N6628
1N6629
1N6630
1N6631
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Untitled
Abstract: No abstract text available
Text: BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7610-100B
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panasonic inverter manual
Abstract: object counter circuit Infrared object counter circuit panasonic frequency inverter manual reflective sensor ir modulated 1" color sensing sensor Panasonic transistor marking code KASUGA
Text: 5.5mm RX-LS200 -P M4 (length 16mm) screw with washers >Never use this product as a sensing device for personnel protection. I In case of using sensing devices for personnel protection, use products which meet laws and standards, such as OSHA, ANSI or IEC etc., for personnel protec
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17N-m
D-83607
panasonic inverter manual
object counter circuit
Infrared object counter circuit
panasonic frequency inverter manual
reflective sensor ir modulated 1"
color sensing sensor
Panasonic transistor marking code
KASUGA
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GIJ diode
Abstract: IRFI720G
Text: PD-9.834 International S ] Rectifier IRFI720G HEXFET® Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V DSS “ 400V \ R DS on = 1 -8 ß
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IRFI720G
O-220
GIJ diode
IRFI720G
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4 Pin SMD Hall sensors
Abstract: Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor
Text: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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6251-456-2DS
HAL114,
HAL115
HAL11x
HAL114
OT-89A
SPGS0022-5-A3/2E
4 Pin SMD Hall sensors
Hall-Effect-Sensor 115C
SMD Hall sensors code C
smd hall sensor
SMD Hall sensors
3 pin SMD hall sensor
SMD Hall C
115c hall
4 lead SMD Hall sensors
4 pin hall sensor
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Untitled
Abstract: No abstract text available
Text: International k ?r Rectifier I HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • 4A55452 0013146 371 H I N R PD-9.834 IRFI720G Isolated Package High Voltage Isolations 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance
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4A55452
IRFI720G
O-220
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