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    60V TRANSISTOR NPN 1A Search Results

    60V TRANSISTOR NPN 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    60V TRANSISTOR NPN 1A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FMMT493ATA

    Abstract: No abstract text available
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


    Original     		FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT452) 522-FMMT493ATA FMMT493ATA PDF

    FMMT493A

    Abstract: FMMT493ATA FMMT493ATC
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


    Original     		FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT493A FMMT493ATA FMMT493ATC PDF

    FMMT493A

    Abstract: FMMT493ATA FMMT493ATC
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


    Original     		FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT493A FMMT493ATA FMMT493ATC PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


    Original     		FMMT493A 250mA FMMT493ATA FMMT493ATC PDF

    ZXTN2010GTA

    Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010G OT223 OT223 PDF

    ZXTN

    Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010G OT223 OT223 INFORMAT26100 ZXTN ZXTN2010GTA ZXTN2010G ZXTN2010GTC PDF

    ZX5T851G

    Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor PDF

    X5T851

    Abstract: bv 42 TRANSISTOR equivalent
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent PDF

    ZXTN25060BZTA

    Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
    Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZXTN25060BZ D-81541 ZXTN25060BZTA TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7 PDF

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		ZXTN2010Z PDF

    ZXTN2010A

    Abstract: ZXTN2010ASTOA ZXTN2010ASTZ
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ PDF

    IC2A

    Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ IC2A marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010AST) PDF

    ZXTN2010ZTA

    Abstract: ZXTN2010Z 0019E
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		ZXTN2010Z ZXTN2010ZTA ZXTN2010Z 0019E PDF

    X5T851

    Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
    Text: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ PDF

    ZXTP19060CFF

    Abstract: ZXTN19060CFF ZXTN19060CFFTA
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


    Original     		ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTP19060CFF ZXTN19060CFF ZXTN19060CFFTA PDF

    ZXTN19060CFF

    Abstract: ZXTN19060CFFTA ZXTP19060CFF marking 1E4
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


    Original     		ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTN19060CFF ZXTN19060CFFTA ZXTP19060CFF marking 1E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


    Original     		ZXTN19060CFF OT23F, ZXTP19060CFF OT23F PDF

    Untitled

    Abstract: No abstract text available
    Text: ZX5T851G 60V NPN M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in


    Original     		ZX5T851G OT223 OT223 PDF

    TS16949

    Abstract: ZXTN19060CG ZXTN19060CGTA ZXTP19060CG
    Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541 TS16949 ZXTN19060CG ZXTN19060CGTA ZXTP19060CG PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZX5T851A 60V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN E-LINE SUM M ARY BV CEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC


    Original     		ZX5T851A PDF