Untitled
Abstract: No abstract text available
Text: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: AUIRFB3806 Description: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Support Docs: N/A Commercial Datasheet Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive
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AUIRFB3806
O-220AB
O-220AB
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Untitled
Abstract: No abstract text available
Text: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: AUIRF1018E Description: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Support Docs: N/A Commercial Datasheet Reliability Report Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive
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AUIRF1018E
O-220AB
O-220AB
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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IRFP60A
Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes
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O-220
Q101-Compliant
IRFP60A
40A 45V to-220 Schottky
IRF7210
ir*c30ud
IRFB9N65
2CWQ03FN
IR 200V P-Channel fets
IRFIB7N50A CONVERTER
IRG4IBC10UD
876-1413
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F53 DIODE
Abstract: IRF9Z24L IRF9Z24S
Text: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω
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IRF9Z24S/L
IRF9Z24S)
IRF9Z24L)
12-Mar-07
F53 DIODE
IRF9Z24L
IRF9Z24S
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IRF9Z14L
Abstract: IRF9Z14S
Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω
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IRF9Z14S/L
IRF9Z14S)
IRF9Z14L)
12-Mar-07
IRF9Z14L
IRF9Z14S
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IRF9Z34
Abstract: IRF9Z34L IRF9Z34S
Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω
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IRF9Z34S/L
IRF9Z34S)
IRF9Z34L)
12-Mar-07
IRF9Z34
IRF9Z34L
IRF9Z34S
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IRF9Z34L
Abstract: IRF9Z34S
Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω
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IRF9Z34S/L
IRF9Z34S)
IRF9Z34L)
IRF9Z34L
IRF9Z34S
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"thermal via" PCB D2PAK
Abstract: 9912A thermal IRF9Z24L IRF9Z24S 9912A
Text: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω
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IRF9Z24S/L
IRF9Z24S)
IRF9Z24L)
"thermal via" PCB D2PAK
9912A thermal
IRF9Z24L
IRF9Z24S
9912A
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IRF9Z34S
Abstract: IRF9Z34L "thermal via" PCB D2PAK
Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω
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IRF9Z34S/L
IRF9Z34S)
IRF9Z34L)
IRF9Z34S
IRF9Z34L
"thermal via" PCB D2PAK
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IRF9Z14L
Abstract: IRF9Z14S marking 67A
Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω
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IRF9Z14S/L
IRF9Z14S)
IRF9Z14L)
IRF9Z14L
IRF9Z14S
marking 67A
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IRF9Z14L
Abstract: IRF9Z14S
Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω
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IRF9Z14S/L
IRF9Z14S)
IRF9Z14L)
IRF9Z14L
IRF9Z14S
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HEXFET Power MOSFET designer manual
Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2
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AN-937
500ns/div
HEXFET Power MOSFET designer manual
GBAN-PVI-1
266CT125-3E2A
HEXFET Power MOSFET designer manual GBAN-PVI-1
TTL dm7400
CD4093 IC details
CD4093
CI 7407
ic cd4093
IR2121 equivalent
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GBAN-PVI-1
Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit
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AN-937
500ns/div
GBAN-PVI-1
ca3103
266CT125-3E2A
IR7509
ic cd4093
oscillator with CD4093 Types
dc to dc chopper
zener in4148
240XT250-3EA2
IRF540 complementary
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Untitled
Abstract: No abstract text available
Text: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω
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IRF9Z14S/L
IRF9Z14S)
IRF9Z14L)
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω
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IRF9Z34S/L
IRF9Z34S)
IRF9Z34L)
08-Mar-07
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IRF9Z24S/L
Abstract: No abstract text available
Text: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω
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IRF9Z24S/L
IRF9Z24S)
IRF9Z24L)
08-Mar-07
IRF9Z24S/L
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AN-944A
Abstract: AN944A AN934B IRF130 IRF430 IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET i-pak Package zener diode MOSFET reliability report format AN949A High frequency switching
Text: EXECUTIVE SUMMARY FIFTY FIFTH QUARTERLY REPORT This Quarterly Reliability Report is a summary of test data covering the previous twenty four months of component testing at International Rectifier's HEXFET America facility in Temecula, California. The products tested include HEXFETs packaged in TO-220,
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O-220,
O-247
O-220
O-220/D2Pak
AN-944A
AN944A
AN934B
IRF130
IRF430
IRF440
what is THERMAL RUNAWAY IN RECTIFIER MOSFET
i-pak Package zener diode
MOSFET reliability report format
AN949A High frequency switching
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irf 1740
Abstract: 48V SMPS smps 48v 12v
Text: PD- 96128 IRF7478QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description
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IRF7478QPbF
irf 1740
48V SMPS
smps 48v 12v
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Untitled
Abstract: No abstract text available
Text: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250
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T-39-Ã
IRHN7150
IRHN8150
IRHN7250
IRHN8250
IRHN7450
IRHN8450
IRHE7110
IRHE8110
IRHE7130
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IRF520 application note
Abstract: IRF52Q Irf520 spice irf522 AN975 A44B irf521
Text: HE D I Data Sheet No. PD-9.313J 40 55 4 5 5 □□00 44 2 2 | T-39-11 INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER I I O R I REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF52Q IRFS21
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T-39-11
IRF52Q
IRFS21
IRFS23
T0-220AB
C-197
IRF520,
IRF521,
IRF522,
IRF523
IRF520 application note
Irf520 spice
irf522
AN975
A44B
irf521
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9437B
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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IRFG5110
IRFG5110
I-222
9437B
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IRFT003
Abstract: automatic volume control using lm358 IRFT003http://datasheet.datasheetarchive.com/originals/scans/Scans-021/ScansEX27879.pdf disadvantages of automatic room power control CPY203E lm358 current sense 10a disadvantages of automatic room control IRCC034 LM324 pin configuration of TLC271
Text: INTERNATIONAL RECTIFIER bSE D • 4ÛS5MS5 QQlbSOB 3SÔ ■ INR Data Sheet No. PD-5.014D International [^Rectifier HEXFET Power Module CPY203E & IRFT003 Power H-Brldges Description/Featu res Product Summary The CPY203E and the IRFT003 are intended for use
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S54SH
CPY203E
IRFT003
CPY203E
automatic volume control using lm358
IRFT003http://datasheet.datasheetarchive.com/originals/scans/Scans-021/ScansEX27879.pdf
disadvantages of automatic room power control
lm358 current sense 10a
disadvantages of automatic room control
IRCC034
LM324
pin configuration of TLC271
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Untitled
Abstract: No abstract text available
Text: P D -9.911 A International IRF9Z14S/L 3BR Rectifier HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z14S • Low-profile through-hole (IRF9Z14L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated
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IRF9Z14S)
IRF9Z14L)
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