Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    60V DUAL N-CHANNEL TRENCH MOSFET Search Results

    60V DUAL N-CHANNEL TRENCH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    60V DUAL N-CHANNEL TRENCH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXMN6A11DN8

    Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d
    Text: ZXMN6A11DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d

    Untitled

    Abstract: No abstract text available
    Text: AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to provide excellent RDS ON and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. VDS (V) = 60V


    Original     		PDF AO4852 AO4852

    Untitled

    Abstract: No abstract text available
    Text: AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to provide excellent RDS ON and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. VDS (V) = 60V


    Original     		PDF AO4852 AO4852

    d51a

    Abstract: No abstract text available
    Text: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC d51a

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V: RDS(ON)= 0.055 ; ID= 4.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC 6A25D PROVI01-04

    ZXMN6A25DN8

    Abstract: ZXMN6A25DN8TA ZXMN6A25DN8TC
    Text: ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V: RDS(ON)= 0.055 ; ID= 4.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC

    AO4828

    Abstract: No abstract text available
    Text: AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 4.5A (VGS = 10V)


    Original     		PDF AO4828 AO4828

    6a25d

    Abstract: No abstract text available
    Text: ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V: RDS(ON)= 0.055 ; ID= 4.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC 6A25D 6a25d

    ZXMN6A09DN8

    Abstract: ZXMN6A09DN8TA ZXMN6A09DN8TC
    Text: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC

    AO4828

    Abstract: No abstract text available
    Text: AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 4.5A (VGS = 10V)


    Original     		PDF AO4828 AO4828

    D51A

    Abstract: 51A SOIC ZXMN6A09DN8TA diode 1407
    Text: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC D51A 51A SOIC diode 1407

    ao4826

    Abstract: No abstract text available
    Text: AO4826 60V Dual N-Channel MOSFET General Description Product Summary The AO4826 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 6.3A (VGS = 10V)


    Original     		PDF AO4826 AO4826

    ZXMN6A09DN8

    Abstract: ZXMN6A09DN8TA ZXMN6A09DN8TC
    Text: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


    Original     		PDF ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC ZXMN6A09DN8 ZXMN6A09DN8TA ZXMN6A09DN8TC

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)


    Original     		PDF ELM14828AA-N ELM14828AA-N

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM14826AA-N •General description ■Features ELM14826AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=6.3A (Vgs=10V) Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=4.5V)


    Original     		PDF ELM14826AA-N ELM14826AA-N

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM34804AA-N •General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)


    Original     		PDF ELM34804AA-N ELM34804AA-N P5506HVG AUG-19-2004

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM14826AA-N •General description ■Features ELM14826AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=6.3A (Vgs=10V) Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=4.5V)


    Original     		PDF ELM14826AA-N ELM14826AA-N

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)


    Original     		PDF ELM14828AA-N ELM14828AA-N

    TS16949

    Abstract: ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC 6A25D
    Text: ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.050 @ VGS = 10V 5 0.070 @ VGS = 4.5V 4.2 Description D1 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of


    Original     		PDF ZXMN6A25DN8 D-81541 TS16949 ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC 6A25D

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.050 @ VGS = 10V 5 0.070 @ VGS = 4.5V 4.2 Description D1 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of


    Original     		PDF ZXMN6A25DN8 D-81541

    6A25D

    Abstract: No abstract text available
    Text: ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.050 @ VGS = 10V 5 0.070 @ VGS = 4.5V 4.2 Description D1 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of


    Original     		PDF ZXMN6A25DN8 ZXMN6A25DN8TA 6A25D

    Untitled

    Abstract: No abstract text available
    Text: AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.


    Original     		PDF AO4611 AO4611

    Complementary

    Abstract: AO4611 if63 di 2417
    Text: AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.


    Original     		PDF AO4611 AO4611 Complementary if63 di 2417

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


    Original     		PDF ZXMN6A11DN8