0N06
Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.
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RFG70N06,
RFP70N06,
RF1S70N06SM
RFP70
0N06S
RFG70N06
O-247
O-220AB
175oC
TB334
0N06
RFP70N06
RF1S70N06SM
TB334
RF1S70N06SM9A
RFG70N06
F1S70N06
rfp70
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PDF
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F1S50N06
Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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Original
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RFG50N06,
RFP50N06,
RF1S50N06,
RF1S50N06SM
175oC
98e-1
35E-4
83e-6)
42e-9
1e-30
F1S50N06
RFP50N06
RF1S50N06SM9A
RF1S50N06
RF1S50N06SM
RFG50N06
TB334
TA49018
50A60V
rfp50n0
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PDF
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MOSFET 60V 210A
Abstract: 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334
Text: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet July 1999 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs File Number 3948.5 Features • 0.30A, 60V These are intelligent monolithic power circuits which
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Original
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RLD03N06CLE,
RLD03N06CLESM,
RLP03N06CLE
MOSFET 60V 210A
03N06C
RLD03N06CLE
RLD03N06CLESM
RLD03N06CLESM9A
RLP03N06CLE
TB334
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PDF
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F16N06
Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
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Original
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RFD16
N06SM)
O251AA,
O252AA)
RFD16N06,
RFD16N06SM
1e-30
07e-3
19e-7)
F16N06
N06 MOSFET
TO-252AA Package mos fet
*16N06
AN9321
RFD16N06
RFD16N06SM
RFD16N06SM9A
TB334
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PDF
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5n06
Abstract: F1S25N06 302 s1b diode
Text: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB
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RFP25N06,
RF1S25N06SM
5N06S
O220AB
O263AB
5n06
F1S25N06
302 s1b diode
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PDF
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mosfet motor dc 48v
Abstract: 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V Formerly developmental type TA09870. Ordering Information PACKAGE 4088.3 Features These are N-Channel power MOSFETs manufactured using
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Original
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RFD14N06L,
RFD14N06LSM,
RFP14N06L
TA09870.
mosfet motor dc 48v
14n06l
14N06
FP14N
RELAY 4088
RFD14N06L
RFD14N06LSM
RFD14N06LSM9A
RFP14N06L
TB334
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PDF
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9973
Abstract: No abstract text available
Text: Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN9973J3 BVDSS ID RDSON 60V 14A 80mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A
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C418J3
MTN9973J3
O-252
UL94V-0
9973
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PDF
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ic 7495
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.
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ZXTP25060BFH
-85mV
ZXTN25060BFH
AEC-Q101
DS33374
ic 7495
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PDF
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RFP70N06
Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω
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RFG70N06,
RFP70N06,
RF1S70N06SM
TA49007.
O-247
O-220AB
O-263AB
175oC
TB334
RFP70N06
RFP70N06
AN9321
AN9322
RF1S70N06SM
RF1S70N06SM9A
RFG70N06
TB334
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PDF
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MEN9973J3
Abstract: No abstract text available
Text: Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MEN9973J3 BVDSS ID RDSON 60V 12A 100mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A
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Original
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C418J3-E
MEN9973J3
O-252
UL94V-0
MEN9973J3
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PDF
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fp50n06
Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process
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Original
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RFG50N06LE,
RFP50N06LE,
RF1S50N06LESM
fp50n06
c 4072
TA49164
F50N06LE
FG50N06L
FP50N06L
RF1S50N06LESM
RF1S50N06LESM9A
RFG50N06LE
RFP50N06LE
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.
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Original
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ZXTP25060BFH
J-STD-020
-85mV
DS33374
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PDF
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0N06L
Abstract: RFP30N06
Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil
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RFP30N06LE,
RF1S30N06LESM
0N06L
RFP30N06
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PDF
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03n06
Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
Text: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener
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Original
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RLD03N06CLE,
RLD03N06CLESM,
RLP03N06CLE
03n06
MOSFET 60V 210A
03N06C
RLD03N06CLE
RLD03N06CLESM
RLD03N06CLESM9A
RLP03N06CLE
TB334
65E6
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PDF
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|
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5n06
Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
Text: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil
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Original
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RFD15N06LE,
RFD15N06LESM
5N06L
RFD15
N06LE
5n06
5n06l
RFD15N06LE
RFD15N06LESM
RFD15N06LESM9A
TB334
N06L
215e3
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PDF
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50n06l
Abstract: No abstract text available
Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Semiconductor Data Sheet April 1999 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs 4072.2 Features • 50A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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Original
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RFG50N06LE,
RFP50N06LE,
RF1S50N06LESM
TA49164.
Cu94e-5)
50e-4
53e-6)
54e-3
21e-6)
50n06l
|
PDF
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F1S30P06
Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω
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Original
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RFG30P06,
RFP30P06,
RF1S30P06SM
TA09834.
O-247
O-220AB
O-263AB
175oC
TB334
RFP30P06
F1S30P06
F1S30
mosfet motor dc 48v
R*P30P06
RF1S30P06SM
RF1S30P06SM9A
RFG30P06
RFP30P06
TB334
F1S30P
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PDF
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FD3055
Abstract: fp3055 TA49082 IS433 RFD3055
Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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Original
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RFD3055,
RFD3055SM,
RFP3055
TA49082.
TB334
RFD3055SM
RFD3055SM9A136
RFD3055SM9A
O-252
FD3055
fp3055
TA49082
IS433
RFD3055
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PDF
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8A60V
Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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Original
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RFD8P06E,
RFD8P06ESM,
RFP8P06E
RFD8P06ESM
RFP8P06E
8A60V
RFD8P06E
RFD8P06ESM9A
TB334
bv254
|
PDF
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f3055l
Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes
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Original
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RFD3055LE,
RFD3055LESM,
RFP3055LE
TA49158.
f3055l
FP3055LE
f3055
Fp3055
FP3055L
RFD3055LESM
RFP3055LE
RFD3055LE
AN9321
RFD3055LESM9A
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PDF
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RFP70N06
Abstract: No abstract text available
Text: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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Original
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RFP70N06
TA78440.
O-220AB
RFP70N06
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PDF
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f3055l
Abstract: FP3055LE
Text: ? *3 2 £ RFD3055LE, RFD3055LESM, RFP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
|
RFD3055LE,
RFD3055LESM,
RFP3055LE
150i2
1e-30
06e-3
22e-7)
48e-3
77e-5)
55e-3
f3055l
FP3055LE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Semiconductor April 1999 Data Sheet 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs File Num ber 3948.4 Features • 0.30A, 60V These are intelligent monolithic power circuits which
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OCR Scan
|
RLD03N06CLE,
RLD03N06CLESM,
RLP03N06CLE
1e-30
13e-8)
80e-3
95e-3
22e-3
95e-6)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RFD14N06, RFD14N06SM, RFP14N06 HARRIS r^ o V o V ^ 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Ju n e 1995 Packaging Features JEDEC T0-220AB • 14A, 60V • rDS(ON) SOURCE = 0.100i2 • Temperature Compensating PSPICE Model
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OCR Scan
|
RFD14N06,
RFD14N06SM,
RFP14N06
T0-220AB
100i2
O-251AA
1-800-4-HARRIS
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PDF
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