Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) -4V drive Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1907B
BMS3003
O-220F-3SG
13200pF
A1907-5/5
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A1907
Abstract: TF-680
Text: BMS3003 Ordering number : ENA1907 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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BMS3003
ENA1907
13200pF
PW10s,
A1907-5/5
A1907
TF-680
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Untitled
Abstract: No abstract text available
Text: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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BMS3003
ENA1907A
13200pF
A1907-7/7
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
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A1907
Abstract: TO-220F-3SG
Text: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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ENA1907A
BMS3003
13200pF
PW10s,
--36V,
A1907-7/7
A1907
TO-220F-3SG
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Untitled
Abstract: No abstract text available
Text: PD-95935A IRFB3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G S VDSS RDS on typ. max. ID
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PD-95935A
IRFB3507PbF
O-220AB
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 96903 IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
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AN-994
Abstract: IRFB3507 IRFS3507 IRFSL3507
Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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96903B
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
AN-994
IRFB3507
IRFS3507
IRFSL3507
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Untitled
Abstract: No abstract text available
Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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96903B
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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6903A
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
Dissi26)
|
Untitled
Abstract: No abstract text available
Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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95935B
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
O-262
O-220AB
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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95935B
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
O-262
O-220AB
EIA-418.
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19-AF
Abstract: AN-994
Text: PD - 95935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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5935A
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
O-262
O-220AB
Curren26)
19-AF
AN-994
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AN-994
Abstract: IRFB3507 IRFS3507 IRFSL3507
Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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96903B
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
AN-994
IRFB3507
IRFS3507
IRFSL3507
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|
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Chengdu
Abstract: No abstract text available
Text: CPEC RX80N75 RX80N75 Silicon N Channel Power MOSFET Description ²Trench power MOSFET technology ²Fast switching speed ²Low on-resistance ²100% avalanche tested Features ²VDSS =75V ²ID =80A ²RDS on ＜8mΩ (VGS=10V) Application ²Switching application
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RX80N75
6TO-220
Chengdu
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RX80N08
Abstract: No abstract text available
Text: CPEC RX80N08 RX80N08 Silicon N Channel Power MOSFET Description ²Trench power MOSFET technology ²Fast switching speed ²Low on-resistance ²100% avalanche tested Features ²VDSS =80V ²ID =80A ²RDS on ＜8mΩ (VGS=10V) Application ²Switching application
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RX80N08
6TO-220
RX80N08
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76432S
Abstract: ON 4673 AN9321 AN9322 HUF76432P3 HUF76432S3S HUF76432S3ST TB334
Text: HUF76432P3, HUF76432S3S Data Sheet December 1999 File Number 4673.3 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76432P3 HUF76432S3S
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HUF76432P3,
HUF76432S3S
O-220AB
O-263AB
HUF76432P3
76432S
ON 4673
AN9321
AN9322
HUF76432P3
HUF76432S3S
HUF76432S3ST
TB334
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Untitled
Abstract: No abstract text available
Text: HUFA76432P3, HUFA76432S3S TM Data Sheet November 2000 File Number 4994 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76432P3 HUFA76432S3S
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HUFA76432P3,
HUFA76432S3S
O-220AB
O-263AB
HUFA76432P3
O-220AB
O-263AB
76432P
76432S
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76432S
Abstract: 76432P HUF76432S3ST HUF76432P3 HUF76432S3S TB334
Text: HUF76432P3, HUF76432S3S Data Sheet December 1999 File Number 4673.3 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32P Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE UF76 2S3 bjec 0V, 19 m, A, JEDEC TO-263AB GATE SOURCE
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HUF76432P3,
HUF76432S3S
O-220AB
O-263AB
HUF76432P3
76432S
76432P
HUF76432S3ST
HUF76432P3
HUF76432S3S
TB334
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76432S
Abstract: AN9321 HUF76432P3 HUF76432S3S HUF76432S3ST TB334
Text: HUF76432P3, HUF76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76432P3 HUF76432S3S Features • Ultra Low On-Resistance
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HUF76432P3,
HUF76432S3S
O-220AB
O-263AB
HUF76432P3
76432P
76432S
AN9321
HUF76432P3
HUF76432S3S
HUF76432S3ST
TB334
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76432S
Abstract: 850E3 HUFA76432P3 HUFA76432S3S HUFA76432S3ST TB334 eds 4994
Text: HUFA76432P3, HUFA76432S3S Data Sheet November 2000 File Number 4994 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76432P3 HUFA76432S3S
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HUFA76432P3,
HUFA76432S3S
O-220AB
O-263AB
HUFA76432P3
764lopment.
76432S
850E3
HUFA76432P3
HUFA76432S3S
HUFA76432S3ST
TB334
eds 4994
|
76432S
Abstract: HUFA76432P3 HUFA76432S3S HUFA76432S3ST TB334
Text: HUFA76432P3, HUFA76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76432P3 HUFA76432S3S Features • Ultra Low On-Resistance
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HUFA76432P3,
HUFA76432S3S
O-220AB
O-263AB
HUFA76432P3
76432P
HUFA76432opment.
76432S
HUFA76432P3
HUFA76432S3S
HUFA76432S3ST
TB334
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IRFZ48V
Abstract: No abstract text available
Text: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V
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PD-94834
IRFIZ48VPbF
O-220
IRFZ48V
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IRFZ48V
Abstract: No abstract text available
Text: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V
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PD-94834
IRFIZ48VPbF
O-220
I840G
IRFZ48V
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