dpak mosfet motor control DC
Abstract: STD10PF06 STD10PF06 equivalent TO252 dpak mosfet
Text: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED
|
Original
|
STD10PF06
O-251)
O-252)
O-251
O-252
dpak mosfet motor control DC
STD10PF06
STD10PF06 equivalent
TO252
dpak mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED
|
Original
|
STD10PF06
O-251)
O-252)
O-251
O-252
|
PDF
|
STD10PF06
Abstract: STD10PF
Text: STD10PF06 P - CHANNEL 60V - 0.18 Ω - 10A TO-252 STripFET POWER MOSFET TYPE STD10PF06 • ■ ■ ■ ■ ■ V DSS R DS o n ID 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED
|
Original
|
STD10PF06
O-252
STD10PF06
STD10PF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008U10000000 Version
|
Original
|
MA6008U10000000
D020210
O-251
80pcs
4000pcs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008D10000000 Version
|
Original
|
MA6008D10000000
D020210
O-252
O-252
3000pcs
6000pcs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008P10000000 Version
|
Original
|
MA6008P10000000
D020210
O-220
50pcs
1000pcs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6004P10000000 Version
|
Original
|
MA6004P10000000
D020210
O-220
50pcs
1000pcs
|
PDF
|
IGBT DRIVER ignition coil automotive
Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
Text: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of
|
Original
|
HUF75639P3,
HUF75639S3S
HUF75637P3,
HUF75637S3S
HUF75631P3
HUF75623P3
FN4477
FN4721
FN4720
FN4804
IGBT DRIVER ignition coil automotive
mosfet to ignition coil
HGT1S14N40G3VLS
HUF76639
N-channel MOSFET to-247 50a
TO-252 N-channel power MOSFET
HGTP14N45G3VL
ignition IGBTS
60V 60A TO-252 N-CHANNEL
60V 60A TO-252
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6004F10000000 Version
|
Original
|
MA6004F10000000
D020210
O-220F
50pcs
1000pcs
|
PDF
|
STD10NF06
Abstract: STD10NF06L 6-8 B1
Text: STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L VDSS RDS on ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) • ■ 3 1 DESCRIPTION
|
Original
|
STD10NF06L
O-252)
STD10NF06
STD10NF06L
6-8 B1
|
PDF
|
AN8610
Abstract: UF 407 Diode HIP2060AS1 HIP2060 HIP2060AS2 HIP2060AS3 MO-169 12v class d amplifier 70W
Text: HIP2060 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.
|
Original
|
HIP2060
HIP2060
AN8610
UF 407 Diode
HIP2060AS1
HIP2060AS2
HIP2060AS3
MO-169
12v class d amplifier 70W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6004D10000000 Version
|
Original
|
MA6004D10000000
D020210
O-252
O-252
3000pcs
6000pcs
|
PDF
|
IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
|
Original
|
RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MA6006S10000000 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The MA6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
|
Original
|
MA6006S10000000
MA6006S
D061009
3000pcs
6000pcs
|
PDF
|
|
|
IRFZ24N
Abstract: IRFz24n equivalent
Text: PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier
|
Original
|
IRFIZ24EPbF
O-220
I840G
IRFZ24N
IRFz24n equivalent
|
PDF
|
12v class d amplifier 70W
Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V
|
Original
|
HIP2060
TS-001AA
HIP2060
100mJ
MO-169
1-800-4-HARRIS
12v class d amplifier 70W
HIP2060AS1
HIP4080A
HIP2060AS2
AN8610
1350P
|
PDF
|
12v class d amplifier 70W
Abstract: HIP2060 HIP2060AS1 HIP2060AS2 HIP4080A MO-169 Transistor S1D
Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array July 1996 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.125Ω Max Per Transistor at VGS = 15V
|
Original
|
HIP2060
TS-001AA
HIP2060
100mJ
MO-169
1-800-4-HARRIS
12v class d amplifier 70W
HIP2060AS1
HIP2060AS2
HIP4080A
Transistor S1D
|
PDF
|
12v class d amplifier 70W
Abstract: 25E03 HIP4080A 001-AA transistor AHs
Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS
|
Original
|
HIP2060
HIP2060
1-800-4-HARRIS
12v class d amplifier 70W
25E03
HIP4080A
001-AA
transistor AHs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 60V>U-X /17-MOSFET 60V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK2286 F 2 0 S 6 N 60v 20 a ■ R A TIN G S A b s o lu te Maxim um R a tin g s m in Id Ite m f-f; { Î'ÎnL^X S t o r a g e T e m p e r a tu r e A' T' C h a n n e l T e m p e ra tu r e
|
OCR Scan
|
/17-MOSFET
2SK2286
10//s,
F20S6N)
|
PDF
|
PAL 007 E MOSFET
Abstract: mosfet pal 007 PAL 007 b MOSFET PAL 007 MOSFET k 2545 MOSFET PAL 007 a MOSFET J373 2SJ373 F20S6P CF20S6P
Text: 60Vv'J-X MOSFET 60V SERIES POWER MOSFET W g - tf ä t ia O U T L IN E D IM E N S IO N S 2SJ373 F20S6P Mtëm • R A TIN G S ■ Absolute Maximum Ratings m Item s IE Symbol m m it Conditions m m Ratings w- i ± Unit Storage Temperature Tstg -5 5-150 °C .-V ■
|
OCR Scan
|
CF20S6P)
STO-22Q
H/XlpgS10
G002530
PAL 007 E MOSFET
mosfet pal 007
PAL 007 b MOSFET
PAL 007 MOSFET
k 2545 MOSFET
PAL 007 a MOSFET
J373
2SJ373
F20S6P
CF20S6P
|
PDF
|
K2286
Abstract: k 2543 MOSFET 2SK2286 F20S6N
Text: 6 0 V v 'J —X /t*7-M0SFET 60V SERIES POWER MOSFET O U T L IN E D IM EN SIO N S 2SK2286 F20S6N 60V 20a • RA TIN G S ■ Absolute Maximum Ratings « Item oS >-] Symbol a S to ra g e T em p eratu re Channel T em perature K u A > • v - x HEE D rain‘S o u rc e Voltage
|
OCR Scan
|
F20S6N)
STO-220
S1/100
2SK2286
CF20S6N)
0Q02E02
K2286
k 2543 MOSFET
F20S6N
|
PDF
|
2510T
Abstract: No abstract text available
Text: 60V>'J-X A 7 — MOSFET 60V SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2281 F10E6N 60v 10a • Æ fè * R A TIN G S A b s o lu te Maxim um R a tin g s m R ti Ite m ^ * S to r a g e T e m p e ra tu re -f- -y 7 ^ ¡'/ni t*x C h a n n e l T e m p e ra tu re
|
OCR Scan
|
2SK2281
F10E6N)
2510T
|
PDF
|
f20f6n
Abstract: 2SK2287
Text: 60VvU-X M9-M0SFET 60V SERIES POWER MOSFET ! > / \> 7 .* > h fi • O U T L IN E D IM E N S IO N S Case : FTO-220 2SK2287 F20F6N 60v 20 a D a te code Yt KÎA.J No. 1 . - Cìate : 2 1! D rain '3 1I S o u r c e ■ R A T IN G S B if ë Î 'il S ^ A È f ê
|
OCR Scan
|
60VvU-X
FTO-220
2SK2287
F20F6N)
f20f6n
2SK2287
|
PDF
|
IRLSZ14A
Abstract: diode 60V 8A
Text: IRLSZ14A Advanced Power MOSFET FEATURES B V dss - Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS= 60V 60 V
|
OCR Scan
|
IRLSZ14A
G3c12fi4
IRLSZ14A
diode 60V 8A
|
PDF
|
