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    60R250P

    Abstract: IPB60R250CP
    Text: IPB60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R250CP P-TO263-3 P-TO263 60R250P 60R250P IPB60R250CP

    IPB60R250CP

    Abstract: JESD22 PG-TO263-3-2
    Text: IPB60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R250CP P-TO263-3 P-TO263 60R250P IPB60R250CP JESD22 PG-TO263-3-2

    IPW60R250CP

    Abstract: JESD22
    Text: IPW60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R250CP PG-TO247 60R250P IPW60R250CP JESD22

    Untitled

    Abstract: No abstract text available
    Text: IPW60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R250CP PG-TO247 60R250P

    Untitled

    Abstract: No abstract text available
    Text: IPI60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R250CP PG-TO262-3-1 PG-TO262 60R250P

    IPI60R250CP

    Abstract: 60R250P JESD22
    Text: IPI60R250CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R250CP PG-TO262 60R250P IPI60R250CP 60R250P JESD22